Patents by Inventor Jinwci Yang

Jinwci Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Metal oxide semiconductor heterostructure field effect transistor
    Publication number: 20040036086
    Abstract: A method and structure for producing nitride based heterostructure devices having substantially lower reverse leakage currents and performance characteristics comparable to other conventional devices. The method and structure include placing one or more layers of nitride-based compounds over a substrate. Additionally, a dielectric layer including silicon dioxide is placed over the nitride-based layers.
    Type: Application
    Filed: August 25, 2003
    Publication date: February 26, 2004
    Inventors: Muhammad Asif Khan, Remigijus Gaska, Michael Shur, Jinwci Yang
  • Metal oxide semiconductor heterostructure field effect transistor
    Patent number: 6690042
    Abstract: A method and structure for producing nitride based heterostructure devices having substantially lower reverse leakage currents and performance characteristics comparable to other conventional devices. The method and structure include placing one or more layers of nitride-based compounds over a substrate. Additionally, a dielectric layer including silicon dioxide is placed over the nitride-based layers.
    Type: Grant
    Filed: September 27, 2001
    Date of Patent: February 10, 2004
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Muhammad Asif Khan, Remigilus Gaska, Michael Shur, Jinwci Yang