Patents by Inventor Jinyu Deng

Jinyu Deng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Spin orbit torque magnetic random access memory structures and methods for fabrication
    Patent number: 10943951
    Abstract: In one example embodiment, a SOT-MRAM includes a storage unit having a Co?X?Pt? based free layer. The storage unit includes a bottom electrode and the Co?X?Pt? based free layer is disposed over the bottom electrode. Further, the storage unit includes a tunnel barrier layer over the Co?X?Pt? based free layer, and a fixed layer over the tunnel barrier layer. The Co?X?Pt? based free layer, tunnel barrier layer and fixed layer form a magnetic tunnel junction. The storage unit may also include a top electrode over the MTJ.
    Type: Grant
    Filed: April 3, 2019
    Date of Patent: March 9, 2021
    Assignee: National University of Singapore
    Inventors: Jingsheng Chen, Jinyu Deng, Liang Liu
  • Spin orbit torque-based spintronic devices using L1-ordered alloys
    Patent number: 10741749
    Abstract: In one embodiment, a SOT device provides current-induced perpendicular magnetization switching in a single magnetic layer, such as a L10-ordered magnetic alloy layer of FePt alloy, CoPt alloy, FePd alloy or another atomically layered magnetic alloy. The SOT may originate from the large spin orbit coupling in these alloys. Depending on the implementation, the SOT device may take the form of a SOT-MRAM, a spin memristor, a current-assisted magnetic recording media, or other type of device.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: August 11, 2020
    Assignee: National University of Singapore
    Inventors: Jingsheng Chen, Liang Liu, Jinyu Deng
  • SPIN ORBIT TORQUE MAGNETIC RANDOM ACCESS MEMORY STRUCTURES AND METHODS FOR FABRICATION
    Publication number: 20190305042
    Abstract: In one example embodiment, a SOT-MRAM includes a storage unit having a Co?X?Pt? based free layer. The storage unit includes a bottom electrode and the Co?X?Pt? based free layer is disposed over the bottom electrode. Further, the storage unit includes a tunnel barrier layer over the Co?X?Pt? based free layer, and a fixed layer over the tunnel barrier layer. The Co?X?Pt? based free layer, tunnel barrier layer and fixed layer form a magnetic tunnel junction. The storage unit may also include a top electrode over the MTJ.
    Type: Application
    Filed: April 3, 2019
    Publication date: October 3, 2019
    Inventors: Jingsheng Chen, Jinyu Deng, Liang Liu
  • SPIN ORBIT TORQUE-BASED SPINTRONIC DEVICES USING L10- ORDERED ALLOYS
    Publication number: 20190058112
    Abstract: In one embodiment, a SOT device provides current-induced perpendicular magnetization switching in a single magnetic layer, such as a L10-ordered magnetic alloy layer of FePt alloy, CoPt alloy, FePd alloy or another atomically layered magnetic alloy. The SOT may originate from the large spin orbit coupling in these alloys. Depending on the implementation, the SOT device may take the form of a SOT-MRAM, a spin memristor, a current-assisted magnetic recording media, or other type of device.
    Type: Application
    Filed: August 21, 2018
    Publication date: February 21, 2019
    Inventors: Jingsheng Chen, Liang Liu, Jinyu Deng