Abstract: A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.

Abstract: The present invention provides a method for integrated online monitoring and a system for integrated online monitoring from a remote location for a nuclear power plant. The method includes a first step of collecting machine monitoring data of a plurality of units in the nuclear power plant selectively from the local data acquisition device via the monitoring data relay device, and a second step of collecting machine diagnostic data of a plurality of units in the nuclear power plant selectively from the local data acquisition device via the diagnostic data relay device.

Abstract: An embodiment all-solid-state battery includes an anode current collector, a buffer layer disposed on the anode current collector, a solid electrolyte layer disposed on the buffer layer and including a solid electrolyte, a cathode active material layer disposed on the solid electrolyte layer, and a cathode current collector disposed on the cathode active material layer. The buffer layer includes a first layer disposed on the anode current collector and including an electrically conductive material, and a second layer disposed on the first layer and including a metal capable of alloying with lithium.

Abstract: In one example, a semiconductor device comprises a main substrate having a top side and a bottom side, a first electronic component on the top side of the main substrate, a second electronic component on the bottom side of the main substrate, a substrate structure on the bottom side of the main substrate adjacent to the second electronic component, and an encapsulant structure comprising an encapsulant top portion on the top side of the main substrate and contacting a side of the first electronic component, and an encapsulant bottom portion on the bottom side of the main substrate and contacting a side of the second electronic component and a side of the substrate structure. Other examples and related methods are also disclosed herein.

Abstract: A dry cleaning apparatus includes a drive IC separating unit configured to separate a drive device from a display panel or a flexible printed circuit board, a first cleaning unit configured to remove residues of an anisotropic conductive film by performing CO2 cleaning on the drive device, a second cleaning unit configured to remove residues of the anisotropic conductive film by performing atmospheric pressure plasma cleaning on the drive device, and a surface inspecting unit configured to perform surface inspection on the drive device after the CO2 cleaning or the atmospheric pressure plasma cleaning.

Abstract: An armrest for a rear center seat of a vehicle includes a foam pad for the rear armrest and a convenience device mounted in the foam pad. The foam pad has formed therein a concave portion configured to induce deformation due to impact and distribute load at a portion in contact with the convenience device so as to satisfy the static strength test on a center headrest for the rear center seat, and at the same time, improve comfort of a passenger seated on the rear center seat.

Abstract: Disclosed is a pulse width modulation signal generation circuit including a charging control circuit connected to and located between a first node connected to a capacitor and a voltage line that supplies an operating voltage, a discharging control circuit connected to and located between the first node and ground, a comparison circuit that generates a comparison signal by comparing a first reference voltage and a second reference voltage with a voltage of the first node, and a control logic circuit that generates a pulse width modulation signal whose level changes based on a level change of the comparison signal and determines a level change timing for the activation of the charging control signal and the discharging control signal using the level change of the comparison signal; and a lamp control system including the pulse width modulation signal generation circuit.

Abstract: Disclosed are a pulse width modulation (PWM) signal generation circuit and a lamp control system including the same. The PWM signal generation circuit includes a pulse period control circuit configured to control charging and discharging of a first capacitor, and generate a first output signal related to a first number of times of charging of the first capacitor, a pulse width control circuit configured to control charging and discharging of a second capacitor, and generate a second output signal related to a second number of times of charging of the second capacitor, and a control logic circuit configured to determine a period of a PWM signal based on the first output signal, determine a pulse width of the PWM signal based on the second output signal, and output the PWM signal having the period and the pulse width.

Abstract: A multilayer electronic component includes a body including a dielectric layer and an internal electrode, and an external electrode disposed on the body. The external electrode includes an electrode layer connected to the internal electrode, an intermetallic compound layer disposed on the electrode layer and including a first intermetallic compound and glass, and a conductive resin layer disposed on the intermetallic compound layer and including a conductive connection portion including a second intermetallic compound and a low-melting-point metal, a plurality of metal particles, and a resin. A ratio of a length of a first direction component of a region having the first intermetallic compound, with respect to a length of a first direction component of the intermetallic compound layer, is 20% or more.

Abstract: An internal reference voltage generation device may include a cell array including a plurality of cells which provide reference voltages of different levels. Each of the plurality of cells may include one of a plurality of divider resistors included in a resistor string; a transmission gate configured to output a voltage of a divider node which is connected to the one divider resistor, in response to a select signal; and a unit decoder configured to provide the select signal to the transmission gate.

Abstract: Disclosed is a heterojunction semiconductor flexible substrate in which an epitaxial oxide thin film layer is hetero-bonded to a thinned silicon substrate using a metal layer, a manufacturing method thereof, and the heterojunction semiconductor flexible substrate can be applied to sensor, actuator, transducer, or micro electro mechanical systems (MEMS) device using high functionality of the epitaxial oxide thin film layer of high quality as well as an electronic and/or optical device.

Abstract: A substrate transfer system capable of performing efficient distribution exchange between fabricating facilities is provided. The substrate transfer system includes a lower rail, an upper rail which is located above the lower rail from a ground plane, and extends to be parallel to the lower rail, a conveyor which extends to intersect the lower rail and the upper rail, below the lower rail, a first lower transport unit which transports a first carrier along the lower rail and unloads the first carrier onto the conveyor, and a first upper transport unit which transports a second carrier along the upper rail and unloads the second carrier onto the conveyor, wherein the conveyor includes a linear module which moves the first carrier and the second carrier in a linear direction, and a turning module which turns the first carrier and the second carrier.

Abstract: A cathode for a lithium secondary battery includes a cathode current collector, and a cathode active material layer formed on the cathode current collector. The cathode active material layer includes a cathode active material and a conductive material ID/IG is in a range from 0.5 to 1.25 in a Raman spectrum of the cathode active material layer. The cathode active material includes lithium metal oxide particles containing nickel and manganese and having a content of cobalt of less than 2 mol % among all elements except for lithium and oxygen.

Abstract: A semiconductor memory device comprising a peripheral circuit structure and a cell structure stacked on the peripheral circuit structure, wherein the cell structure includes a cell substrate including a first face facing the peripheral circuit structure and a second face opposite the first face, a first mold stack including a plurality of first gate electrodes sequentially stacked on the first face, and a channel hole extending through the plurality of first gate electrodes. A channel structure includes a gate dielectric film, a semiconductor film, and a variable resistance film sequentially stacked in the channel hole, wherein the semiconductor film includes a sidewall portion intersecting the first face and the plurality of first gate electrodes, and a top plate portion extending from the sidewall portion in the cell substrate in a parallel manner to the first face.

Abstract: Provided are a shaper unit and an image stabilization device. A shaper unit, according to one aspect of the present invention, comprises: a shaper body formed of a transparent material; first glass disposed on one side of the shaper body; a membrane disposed on one side of the first glass; a variable prism disposed on one side of the membrane; and a second glass disposed on one side of the variable prism.