Patents by Inventor Jitendra S. Goela
Jitendra S. Goela has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8198120Abstract: An optical article and method of making the same are provided. The optical article has optical multi-aperture operation. The optical article has one or more electrically conductive and selectively passivated patterns.Type: GrantFiled: January 28, 2009Date of Patent: June 12, 2012Assignee: Rohm and Haas Electronic Materials LLCInventors: Jitendra S. Goela, Michael A. Pickering, Neil D. Brown, Angelo Chirafisi, Mark Lefebvre, Jamie L. Triba
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Publication number: 20120076928Abstract: Polycrystalline monolithic magnesium aluminate spinels are disclosed. The polycrystalline monolithic magnesium aluminate spinels have small grain sizes and may be deposited on substrates as thick one-piece deposits. The polycrystalline monolithic magnesium aluminate spinels may be prepared and deposited by chemical vapor deposition. Articles made with the polycrystalline monolithic magnesium aluminate spinels also are disclosed.Type: ApplicationFiled: December 8, 2011Publication date: March 29, 2012Applicant: Rohm and Haas CompanyInventors: Jitendra S. GOELA, Heather A.G. Stern
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Patent number: 8142913Abstract: Polycrystalline monolithic magnesium aluminate spinels are disclosed. The polycrystalline monolithic magnesium aluminate spinels have small grain sizes and may be deposited on substrates as thick one-piece deposits. The polycrystalline monolithic magnesium aluminate spinels may be prepared and deposited by chemical vapor deposition. Articles made with the polycrystalline monolithic magnesium aluminate spinels also are disclosed.Type: GrantFiled: August 26, 2008Date of Patent: March 27, 2012Assignee: Rohm and Haas Electronic Materials Korea Ltd.Inventors: Jitendra S. Goela, Heather A. G. Stern
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Patent number: 7927915Abstract: An opaque, low resistivity silicon carbide and a method of making the opaque, low resistivity silicon carbide. The opaque, low resistivity silicon carbide is doped with a sufficient amount of nitrogen to provide the desired properties of the silicon carbide. The opaque, low resistivity silicon carbide is a free-standing bulk material that may be machined to form furniture used for holding semi-conductor wafers during processing of the wafers. The opaque, low resistivity silicon carbide is opaque at wavelengths of light where semi-conductor wafers are processed. Such opaqueness provides for improved semi-conductor wafer manufacturing. Edge rings fashioned from the opaque, low resistivity silicon carbide can be employed in RTP chambers.Type: GrantFiled: June 21, 2004Date of Patent: April 19, 2011Assignee: Rohm and Haas CompanyInventors: Jitendra S. Goela, Michael A. Pickering
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Publication number: 20100170707Abstract: An optical article and method of making the same are provided. The optical article has optical multi-aperture operation. The optical article has one or more electrically conductive and selectively passivated patterns.Type: ApplicationFiled: January 28, 2009Publication date: July 8, 2010Applicant: Rohm and Haas Electronic Materials LLCInventors: Jitendra S. Goela, Michael A. Pickering, Neil D. Brown, Angelo Chirafisi, Mark Lefebvre, Jamie L. Triba
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Patent number: 7722441Abstract: Semiconductor processing and equipment are disclosed. The semiconductor equipment and processing provide semiconductor wafers with reduced defects.Type: GrantFiled: October 6, 2006Date of Patent: May 25, 2010Assignee: Rohm and Haas Electronic Materials LLCInventors: Jitendra S. Goela, Michael A. Pickering, James T. Fahey, Melinda S. Strickland
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Patent number: 7589025Abstract: Methods are disclosed for providing reduced particle generating silicon carbide. The silicon carbide articles may be used as component parts in apparatus used to process semiconductor wafers. The reduced particle generation during semiconductor processing reduces contamination on semiconductor wafers thus increasing their yield.Type: GrantFiled: December 1, 2006Date of Patent: September 15, 2009Assignee: Rohm and Haas Electronic Materials LLCInventors: Jitendra S. Goela, Nathaniel E. Brese, Michael A. Pickering
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Publication number: 20090194022Abstract: Semiconductor processing and equipment are disclosed. The semiconductor equipment and processing provide semiconductor wafers with reduced defects.Type: ApplicationFiled: March 31, 2009Publication date: August 6, 2009Applicant: Rohm and Haas Electronic Materials LLCInventors: Jitendra S. Goela, Michael A. Pickering, James T. Fahey, Melinda S. Strickland
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Publication number: 20090186480Abstract: An optical article and method of making the same are provided. The optical article has optical multi-aperture operation. The optical article has one or more electrically conductive and selectively passivated patterns.Type: ApplicationFiled: January 28, 2009Publication date: July 23, 2009Applicant: Rohm and Haas Electronic Materials LLCInventors: Jitendra S. Goela, Michael A. Pickering, Neil D. Brown, Angelo Chirafisi, Mark Lefebvre, Jamie L. Triba
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Publication number: 20090061254Abstract: Polycrystalline monolithic magnesium aluminate spinels are disclosed. The polycrystalline monolithic magnesium aluminate spinels have small grain sizes and may be deposited on substrates as thick one-piece deposits. The polycrystalline monolithic magnesium aluminate spinels may be prepared and deposited by chemical vapor deposition. Articles made with the polycrystalline monolithic magnesium aluminate spinels also are disclosed.Type: ApplicationFiled: August 26, 2008Publication date: March 5, 2009Applicant: Rohm and Haas CompanyInventors: Jitendra S. Goela, Heather A. G. Stern
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Patent number: 7438884Abstract: A chemical vapor deposited, ? phase polycrystalline silicon carbide having a high thermal conductivity and reduced stacking faults. The silicon carbide is synthesized under specific conditions using hydrogen gas and methyltrichlorosilane gas as reactants. The thermal conductivity of the silicon carbide is sufficiently high such that it can be employed as parts of apparatus and components of electrical devices where a high heat load is generated. Such components may include active thermoelectric coolers, heat sinks and fans.Type: GrantFiled: August 2, 2004Date of Patent: October 21, 2008Assignee: Rohm and Haas Electronic Materials LLCInventors: Nathaniel E. Brese, Jitendra S. Goela, Michael A. Pickering
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Patent number: 7238241Abstract: An apparatus for the manufacture of chemical vapor deposited domes. The apparatus has a vapor deposition chamber with a plurality of sides, a base and a top where the base has a reactant port for receiving a flow of chemical reactants. A male mandrel is joined to one of a plurality of sides of the deposition chamber such that the flow of chemical reactants in the vapor deposition chamber does not impinge on the mandrel.Type: GrantFiled: April 24, 2003Date of Patent: July 3, 2007Assignee: Shipley Company, L.L.C.Inventors: Jitendra S. Goela, Zlatko Salihbegovic
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Patent number: 7018947Abstract: Free standing articles of chemical vapor deposited silicon carbide with electrical resistivities of less than 0.9 ohm-cm are provided without substantially degrading its thermal conductivity or other properties.Type: GrantFiled: February 21, 2001Date of Patent: March 28, 2006Assignee: Shipley Company, L.L.C.Inventors: Jitendra S. Goela, Michael A. Pickering
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Patent number: 6939821Abstract: An opaque, low resistivity silicon carbide and a method of making the opaque, low resistivity silicon carbide. The opaque, low resistivity silicon carbide is doped with a sufficient amount of nitrogen to provide the desired properties of the silicon carbide. The opaque, low resistivity silicon carbide is a free-standing bulk material that may be machined to form furniture used for holding semi-conductor wafers during processing of the wafers. The opaque, low resistivity silicon carbide is opaque at wavelengths of light where semi-conductor wafers are processed. Such opaqueness provides for improved semi-conductor wafer manufacturing. Edge rings fashioned from the opaque, low resistivity silicon carbide can be employed in RTP chambers.Type: GrantFiled: June 6, 2002Date of Patent: September 6, 2005Assignee: Shipley Company, L.L.C.Inventors: Jitendra S. Goela, Michael A. Pickering
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Patent number: 6872637Abstract: An opaque, low resistivity silicon carbide and a method of making the opaque, low resistivity silicon carbide. The opaque, low resistivity silicon carbide is a free-standing bulk material that may be machined to form furniture used for holding semi-conductor wafers during processing of the wafers. The opaque, low resistivity silicon carbide is opaque at wavelengths of light where semi-conductor wafers are processed. Such opaqueness provides for improved semi-conductor wafer manufacturing. Edge rings fashioned from the opaque, low resistivity silicon carbide can be employed in RTP chambers.Type: GrantFiled: July 16, 2003Date of Patent: March 29, 2005Assignee: Shipley Company, L.L.C.Inventors: Michael A. Pickering, Jitendra S. Goela
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Publication number: 20040229395Abstract: An opaque, low resistivity silicon carbide and a method of making the opaque, low resistivity silicon carbide. The opaque, low resistivity silicon carbide is doped with a sufficient amount of nitrogen to provide the desired properties of the silicon carbide. The opaque, low resistivity silicon carbide is a free-standing bulk material that may be machined to form furniture used for holding semi-conductor wafers during processing of the wafers. The opaque, low resistivity silicon carbide is opaque at wavelengths of light where semi-conductor wafers are processed. Such opaqueness provides for improved semi-conductor wafer manufacturing. Edge rings fashioned from the opaque, low resistivity silicon carbide can be employed in RTP chambers.Type: ApplicationFiled: June 21, 2004Publication date: November 18, 2004Inventors: Jitendra S. Goela, Michael A. Pickering
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Patent number: 6811040Abstract: A wafer holding apparatus composed of a plurality of rods joined at opposite ends by endplates. Each rod at each end is secured to the endplates by a mechanical dovetail joint. The dovetail joint secures the rods to the endplates without the need for sealing or coating agents. Also, auxiliary mechanical components such as nuts and bolts to secure the joint components need not be employed to secure the joint. Each rod has multiple grooves or slits for placing multiple semiconductor wafers that are to be processed in processing chambers. The wafer holding apparatus is oxidation resistant, chemical resistant and thermal shock resistant.Type: GrantFiled: July 9, 2002Date of Patent: November 2, 2004Assignee: Rohm and Haas CompanyInventors: Thomas Payne, Jitendra S. Goela, Lee E. Burns, Michael A. Pickering
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Patent number: 6811761Abstract: A chemical vapor deposited, &bgr; phase polycrystalline silicon carbide having a high thermal conductivity and reduced stacking faults. The silicon carbide is synthesized under specific conditions using hydrogen gas and methyltrichlorosilane gas as reactants. The thermal conductivity of the silicon carbide is sufficiently high such that it can be employed as parts of apparatus and components of electrical devices where a high heat load is generated. Such components may include active thermoelectric coolers, heat sinks and fans.Type: GrantFiled: November 9, 2001Date of Patent: November 2, 2004Assignee: Shipley Company, L.L.C.Inventors: Nathaniel E. Brese, Jitendra S. Goela, Michael A. Pickering
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Publication number: 20040012024Abstract: An opaque, low resistivity silicon carbide and a method of making the opaque, low resistivity silicon carbide. The opaque, low resistivity silicon carbide is a free-standing bulk material that may be machined to form furniture used for holding semi-conductor wafers during processing of the wafers. The opaque, low resistivity silicon carbide is opaque at wavelengths of light where semi-conductor wafers are processed. Such opaqueness provides for improved semi-conductor wafer manufacturing. Edge rings fashioned from the opaque, low resistivity silicon carbide can be employed in RTP chambers.Type: ApplicationFiled: July 16, 2003Publication date: January 22, 2004Applicant: Shipley Company, L.L.C.Inventors: Michael A. Pickering, Jitendra S. Goela
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Patent number: 6616870Abstract: An apparatus for the manufacture of chemical vapor deposited domes. The apparatus has a vapor deposition chamber with a plurality of sides, a base and a top where the base has a reactant port for receiving a flow of chemical reactants. A male mandrel is joined to one of a plurality of sides of the deposition chamber such that the flow of chemical reactants in the vapor deposition chamber does not impinge on the mandrel.Type: GrantFiled: August 7, 2000Date of Patent: September 9, 2003Assignee: Shipley Company, L.L.C.Inventors: Jitendra S. Goela, Zlatko Salihbegovic