Abstract: Disclosed herein is a matching of multiple different social graphs to generate a combined social graph. Such a combined social graph may be searched and used in determining information to provide to a user, for example. An iterative metric learning approach may be used in matching multiple different social graphs. A mechanism is provided to validate a match from different social graphs. Match validation of data field matching is provided.

Abstract: Disclosed herein is a matching of multiple different social graphs to generate a combined social graph. Such a combined social graph may be searched and used in determining information to provide to a user, for example. An iterative metric learning approach may be used in matching multiple different social graphs. A mechanism is provided to validate a match from different social graphs. Match validation of data field matching is provided.

Abstract: A process for selectively removing a porous silicon oxide layer from a substrate having a portion thereon with an exposed dense silicon oxide to be retained on the substrate, the porous silicon oxide layer containing absorbed moisture therein, the process comprising:introducing the substrate to a flowing anhydrous gaseous environment consisting of anhydrous inert gas;adding anhydrous hydrogen fluoride gas to the gaseous environment for a pulse time which is at most only shortly longer than that required to initiate etching of the dense silicon oxide;flushing the gaseous environment with anhydrous inert gas for a time sufficient to remove said hydrogen fluoride and water vapor generated by the etching of the porous oxide; and,repeating said adding and flushing steps until said porous oxide layer has been removed.

Abstract: A gaseous process for removing and vaporizing at least a portion of a silicon oxide film from between a substrate and a superstructure leaving a space between the substrate and the superstructure. The silicon oxide layer is removed in two steps. In the first step the bulk of the silicon oxide layer is removed by a rapid liquid or gaseous etching process, leaving at least a portion of the silicon oxide layer directly underlying the superstructure in place so as to support the superstructure during a wash cycle. In the second silicon oxide removal step the substrate is introduced to a high flow rate gaseous environment containing a relatively high concentration of anhydrous HF to which no, or only a relatively very low amount of, additional water vapor is provided until the silicon oxide directly underlying the superstructure has been removed.