Abstract: An RF amplifier includes an amplifier input, a transistor die with a transistor and a transistor input terminal, a fundamental frequency impedance matching circuit coupled between the amplifier input and the transistor input terminal, and a harmonic frequency termination circuit coupled between the transistor input terminal and a ground reference node. The harmonic frequency termination circuit includes a first inductance coupled between the transistor input terminal and a first node, and a tank circuit coupled between the first node and the ground reference node. The tank circuit includes a first capacitance coupled between the first node and the ground reference node, and a second inductance coupled between the first node and the ground reference node. The tank circuit is configured to shunt signal energy at or near a second harmonic frequency, while appearing as an open circuit to signal energy at a fundamental frequency of operation of the RF amplifier.

Abstract: A packaged radio frequency (RF) amplifier device includes a flange and a transistor die mounted to the flange. The transistor die includes an output terminal. The packaged RF amplifier device includes a first bond wire array including a first plurality of bond wires. Each bond wire in the first plurality of bond wires is electrically coupled to the output terminal of the transistor die. A first ground loop area of a first bond wire in the first plurality of bond wires is greater than a second ground loop area of a second bond wire in the first plurality of bond wires.

Abstract: A packaged radio frequency (RF) amplifier device includes a flange and a transistor die mounted to the flange. The transistor die includes an output terminal. The packaged RF amplifier device includes a first bond wire array including a first plurality of bond wires. Each bond wire in the first plurality of bond wires is electrically coupled to the output terminal of the transistor die. A first ground loop area of a first bond wire in the first plurality of bond wires is greater than a second ground loop area of a second bond wire in the first plurality of bond wires.

Abstract: A bond pad structure and method are provided. The structure includes a first conductive layer formed over a substrate. A second conductive layer is formed over a first portion of the first conductive layer, and a first portion of the second conductive layer forms a first capacitor electrode. A third conductive layer is formed over the first conductive layer and second conductive layer, and a first portion of the third conductive layer forms a second capacitor electrode. A second portion of the third conductive layer forms a wire bond region. A dielectric material is disposed between the first capacitor electrode and the second capacitor electrode to form a first capacitor.

Abstract: A bond pad structure and method are provided. The structure includes a first conductive layer formed over a substrate. A second conductive layer is formed over a first portion of the first conductive layer, and a first portion of the second conductive layer forms a first capacitor electrode. A third conductive layer is formed over the first conductive layer and second conductive layer, and a first portion of the third conductive layer forms a second capacitor electrode. A second portion of the third conductive layer forms a wire bond region. A dielectric material is disposed between the first capacitor electrode and the second capacitor electrode to form a first capacitor.