Patents by Inventor Jitsuo Hirohata

Jitsuo Hirohata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9908265
    Abstract: The present invention relates to a method of manufacturing a mold having an oxide film with a plurality of pores formed on a surface of an aluminum substrate, the method including (a) a process of applying a voltage to a machined aluminum substrate and anodizing a surface of the aluminum substrate to form an oxide film; and (b) a process of removing at least a part of the oxide film formed in the process (a), wherein a voltage (Va[V]) immediately before the process (a) is terminated and a time (ta[sec]) required to reach the voltage (Va[V]) after starting the application of voltage satisfy the following Equation (i) in the process (a). 0.
    Type: Grant
    Filed: August 6, 2013
    Date of Patent: March 6, 2018
    Assignees: MITSUBISHI CHEMICAL CORPORATION, KANAGAWA INSTITUTE OF INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Masashi Ikawa, Eiko Okamoto, Hiroshi Onomoto, Jitsuo Hirohata, Yuji Matsubara, Hideki Masuda
  • Patent number: 9605355
    Abstract: This method for producing anodic porous alumina such that an oxide coating film having a plurality of minute pores is formed at the surface of an aluminum substrate is characterized by containing: a step (a) for immersing the aluminum substrate in an electrolytic liquid resulting from mixing a plurality of acids; a step (b) for imposing a voltage on the aluminum substrate immersed in the electrolytic liquid; a step (c) for holding the aluminum substrate in the state of being immersed in the electrolytic liquid essentially without imposing a voltage on the aluminum substrate; and a step (d) for alternately repeating step (b) and step (c). By means of the present invention, it is possible using a simple device and with few steps to provide a method that easily produces anodic porous alumina such that an oxide coating film having a plurality of minute pores is formed at the surface of an aluminum substrate.
    Type: Grant
    Filed: December 9, 2013
    Date of Patent: March 28, 2017
    Assignees: MITSUBISHI RAYON CO., LTD., KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY
    Inventors: Hiroshi Onomoto, Jitsuo Hirohata, Eiko Okamoto, Yuji Matsubara, Masashi Ikawa, Hideki Masuda, Takashi Yanagishita
  • Publication number: 20150299888
    Abstract: This method for producing anodic porous alumina such that an oxide coating film having a plurality of minute pores is formed at the surface of an aluminum substrate is characterized by containing: a step (a) for immersing the aluminum substrate in an electrolytic liquid resulting from mixing a plurality of acids; a step (b) for imposing a voltage on the aluminum substrate immersed in the electrolytic liquid; a step (c) for holding the aluminum substrate in the state of being immersed in the electrolytic liquid essentially without imposing a voltage on the aluminum substrate; and a step (d) for alternately repeating step (b) and step (c). By means of the present invention, it is possible using a simple device and with few steps to provide a method that easily produces anodic porous alumina such that an oxide coating film having a plurality of minute pores is formed at the surface of an aluminum substrate.
    Type: Application
    Filed: December 9, 2013
    Publication date: October 22, 2015
    Inventors: Hiroshi ONOMOTO, Jitsuo HIROHATA, Eiko OKAMOTO, Yuji MATSUBARA, Masashi IKAWA, Hideki MASUDA, Takashi YANAGISHITA
  • Publication number: 20150290844
    Abstract: The present invention relates to a method of manufacturing a mold having an oxide film with a plurality of pores formed on a surface of an aluminum substrate, the method including (a) a process of applying a voltage to a machined aluminum substrate and anodizing a surface of the aluminum substrate to form an oxide film; and (b) a process of removing at least a part of the oxide film formed in the process (a), wherein a voltage (Va [V]) immediately before the process (a) is terminated and a time (ta [sec]) required to reach the voltage (Va [V]) after starting the application of voltage satisfy the following Equation (i) in the process (a). 0.
    Type: Application
    Filed: August 6, 2013
    Publication date: October 15, 2015
    Inventors: Masashi Ikawa, Eiko Okamoto, Hiroshi Onomoto, Jitsuo Hirohata, Yuji Matsubara, Hideki Masuda