Patents by Inventor JIUN-HAO LIN

JIUN-HAO LIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MASK AND METHOD FOR FABRICATING THE SAME
    Publication number: 20220113621
    Abstract: Present disclosure provides a mask and a method for fabricating a semiconductor device, the mask includes a target pattern having consecutive edges, a first scattering bar and a second scattering bar extending along a primary direction and adjacent to consecutive edges of the target pattern, wherein the first scattering bar and the second scattering bar partially overlaps in the primary direction, and a connecting segment connecting between a first end of the first scattering bar and a first end of the second scattering bar, wherein the first scattering bar is not parallel to the connecting segment.
    Type: Application
    Filed: December 21, 2021
    Publication date: April 14, 2022
    Inventors: HUANG-MING WU, JIUN-HAO LIN, JIA-GUEI JOU, CHI-TA LU, CHI-MING TSAI
  • Mask and method for fabricating the same
    Patent number: 11209728
    Abstract: Present disclosure provide a method for fabricating a mask, including obtaining a target pattern to be imaged onto a substrate, providing a first scattering bar and a second scattering bar adjacent to consecutive edges of the target pattern, identifying a first length of the first scattering bar and a second length of the second scattering bar, connecting the first scattering bar and the second scattering bar when any of the first length and the second length is smaller than a predetermined value, identifying a separation between the first scattering bar and the second scattering bar subsequent to identifying the first length and the second length, disposing the first scattering bar and the second scattering bar in a first fashion when the separation is equal to zero, and disposing the first scattering bar and the second scattering bar in a second fashion when the separation is greater than zero.
    Type: Grant
    Filed: January 22, 2019
    Date of Patent: December 28, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Huang-Ming Wu, Jiun-Hao Lin, Jia-Guei Jou, Chi-Ta Lu, Chi-Ming Tsai
  • MASK AND METHOD FOR FABRICATING THE SAME
    Publication number: 20200004136
    Abstract: Present disclosure provide a method for fabricating a mask, including obtaining a target pattern to be imaged onto a substrate, providing a first scattering bar and a second scattering bar adjacent to consecutive edges of the target pattern, identifying a first length of the first scattering bar and a second length of the second scattering bar, connecting the first scattering bar and the second scattering bar when any of the first length and the second length is smaller than a predetermined value, identifying a separation between the first scattering bar and the second scattering bar subsequent to identifying the first length and the second length, disposing the first scattering bar and the second scattering bar in a first fashion when the separation is equal to zero, and disposing the first scattering bar and the second scattering bar in a second fashion when the separation is greater than zero.
    Type: Application
    Filed: January 22, 2019
    Publication date: January 2, 2020
    Inventors: HUANG-MING WU, JIUN-HAO LIN, JIA-GUEI JOU, CHI-TA LU, CHI-MING TSAI