Patents by Inventor JIUN-SHEN CHEN

JIUN-SHEN CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10365085
    Abstract: A method for measuring a thickness of a thin film includes: a step of basing on a training database to establish an artificial neural network, the training database including a plurality of modified spectra and a plurality of film thicknesses corresponding individually to the plurality of modified spectra; a step of measuring a sample having a coated film so as to obtain a spectrum; and, a step of running the artificial neural network already trained by the plurality of modified spectra so as to use the spectrum to estimate a thickness of the coated film on the sample. In addition, a system related to the method for measuring a thickness of a thin film is provided to include a measuring unit, a spectrometer and a processing unit.
    Type: Grant
    Filed: November 30, 2017
    Date of Patent: July 30, 2019
    Assignee: INSTITUTE OF NUCLEAR ENERGY RESEARCH, ATOMIC ENERGY COUNCIL, EXECUTIVE YUAN, R.O.C.
    Inventors: Tzong-Daw Wu, Jiun-Shen Chen, Ching-Pei Tseng, Cheng-Chang Hsieh
  • Publication number: 20190120610
    Abstract: A method for measuring a thickness of a thin film includes: a step of basing on a training database to establish an artificial neural network, the training database including a plurality of modified spectra and a plurality of film thicknesses corresponding individually to the plurality of modified spectra; a step of measuring a sample having a coated film so as to obtain a spectrum; and, a step of running the artificial neural network already trained by the plurality of modified spectra so as to use the spectrum to estimate a thickness of the coated film on the sample. In addition, a system related to the method for measuring a thickness of a thin film is provided to include a measuring unit, a spectrometer and a processing unit.
    Type: Application
    Filed: November 30, 2017
    Publication date: April 25, 2019
    Inventors: TZONG-DAW WU, JIUN-SHEN CHEN, CHING-PEI TSENG, CHENG-CHANG HSIEH
  • Patent number: 9892889
    Abstract: The present invention relates to a roll-to-roll hybrid plasma modular coating system, which comprises: at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit, a metallic film and at least one substrate feeding unit. Each of the arc plasma processing unit is formed with a first chamber and an arc plasma source. Each of the magnetron sputtering plasma processing unit is formed with a second chamber and at least one magnetron sputtering plasma source. The metallic film is disposed in the arc plasma processing unit to avoid chamber wall being deposited by the arc plasma source; There are at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit and at least one winding/unwinding unit connected in series to lay at least one thin layer by arc plasma deposition or by magnetron sputtering plasma onto substrate material.
    Type: Grant
    Filed: April 13, 2016
    Date of Patent: February 13, 2018
    Assignee: INSTITUTE OF NUCLEAR ENERGY RESEARCH, ATOMIC ENERGY COUNCIL, EXECUTIVE YUAN, R.O.C
    Inventors: Cheng-Chang Hsieh, Deng-Lain Lin, Ching-Pei Tseng, Wen-Fa Tsai, Jiun-Shen Chen, Chi-Fong Ai
  • Publication number: 20170040150
    Abstract: The present invention relates to a roll-to-roll hybrid plasma modular coating system, which comprises: at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit, a metallic film and at least one substrate feeding unit. Each of the arc plasma processing unit is formed with a first chamber and an arc plasma source. Each of the magnetron sputtering plasma processing unit is formed with a second chamber and at least one magnetron sputtering plasma source. The metallic film is disposed in the arc plasma processing unit to avoid chamber wall being deposited by the arc plasma source; There are at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit and at least one winding/unwinding unit connected in series to lay at least one thin layer by arc plasma deposition or by magnetron sputtering plasma onto substrate material.
    Type: Application
    Filed: April 13, 2016
    Publication date: February 9, 2017
    Inventors: Cheng-Chang Hsieh, Deng-Lain Lin, Ching-Pei Tseng, Wen-Fa Tsai, Jiun-Shen Chen, Chi-Fong Ai
  • Publication number: 20140102368
    Abstract: A gas isolation chamber comprises a vacuum chamber, a first body module, a second body module and a first temperature modulator. The vacuum chamber comprises a first chamber part, a second chamber part and at least one first gas valve unit. The first body module is disposed on the inner wall of the first chamber part and has a first gas hole corresponding to the position of the first gas valve unit. The first gas hole is connected to the first gas valve unit. The second body module is disposed on the inner wall of the second chamber part such that a slit channel can be formed between the second and the first body modules. The first temperature modulator is disposed in the first body module. The gas isolation chamber is further combined with the vacuum film process chambers to form a plasma deposition apparatus for proceeding continuous deposition process.
    Type: Application
    Filed: May 31, 2013
    Publication date: April 17, 2014
    Inventors: CHENG-CHANG HSIEH, DENG-LAIN LIN, CHING-PEI TSENG, JIN-YU WU, JIUN-SHEN CHEN, CHI-FONG AI