Patents by Inventor Jiun-Yi Tseng

Jiun-Yi Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Non-volatile memory cell having metal nano-particles for trapping charges and fabrication thereof
    Patent number: 6927136
    Abstract: A non-volatile memory cell is described. The non-volatile memory cell comprises a substrate, a charge-trapping layer, a gate and a source/drain. The charge-trapping layer comprises an insulating layer and metal nano-particles contained therein, wherein the metal nano-particles are formed with thermal dissociation of an oxide of the same metal. The gate is disposed on the charge-trapping layer, and the source/drain is located in the substrate beside the gate.
    Type: Grant
    Filed: August 25, 2003
    Date of Patent: August 9, 2005
    Assignee: Macronix International Co., Ltd.
    Inventors: Hsiang-Lan Lung, Kuang-Yeu Hsieh, Ruichen Liu, Tai-Bor Wu, Jiun-Yi Tseng
  • [NON-VOLATILE MEMORY CELL AND FABRICATION THEREOF]
    Publication number: 20050045943
    Abstract: A non-volatile memory cell is described. The non-volatile memory cell comprises a substrate, a charge-trapping layer, a gate and a source/drain. The charge-trapping layer comprises an insulating layer and metal nano-particles contained therein, wherein the metal nano-particles are formed with thermal dissociation of an oxide of the same metal. The gate is disposed on the charge-trapping layer, and the source/drain is located in the substrate beside the gate.
    Type: Application
    Filed: August 25, 2003
    Publication date: March 3, 2005
    Inventors: Hsiang-Lan Lung, Kuang-Yeu Hsieh, Ruichen Liu, Tai-Bor Wu, Jiun-Yi Tseng