Abstract: A core shell quantum dot including a core including a first semiconductor nanocrystal and including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core and including a zinc chalcogenide, a method of manufacture thereof, and a device including the same are disclosed, wherein the core shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein in an X-ray photoelectron spectrum of the quantum dot, a peak area for Te oxide to a peak area for Te3d5/2 as an area percentage is less than or equal to about 25%.

Abstract: A core-shell quantum dot including a core including a first semiconductor nanocrystal, the first semiconductor nanocrystal including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc and selenium, sulfur, or a combination thereof and a production thereof are disclosed, wherein the core-shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein the core-shell quantum dot(s) includes chlorine, wherein in the core-shell quantum dot, a mole ratio of chlorine with respect to tellurium is greater than or equal to about 0.01:1 and wherein a quantum efficiency of the core-shell quantum dot is greater than or equal to about 10%.

Abstract: A semiconductor device includes a substrate, a first sheet pattern on the substrate, a gate electrode on the substrate and surrounding the first sheet pattern, a first source/drain pattern and a second source/drain pattern respectively connected to a first end and a second end of the first sheet pattern, a contact blocking pattern on a lower side of the second source/drain pattern, a first source/drain contact extending in a first direction and connected to the first source/drain pattern, and a second source/drain contact connected to the second source/drain pattern and extending in the first direction to contact an upper surface of the contact blocking pattern. A depth from an upper surface of the gate electrode to a lowermost portion of the first source/drain contact may be greater than a depth from the upper surface of the gate electrode to the upper surface of the contact blocking pattern.

Abstract: The inventive concept provides a driving apparatus. The driving apparatus includes a main body; a driving unit configured to provide a driving force so the main body may drive; a marker output unit configured to irradiate a marker in a predetermined driving direction of the main body; an image acquisition unit configured to acquire a marker image by imaging the marker which is irradiated; and a determination unit for determining whether a risk factor of the predetermined driving direction exists from the marker image which is acquired from the image acquisition unit.

Abstract: Disclosed are novel compounds of Chemical Formula 1, optical isomers of the compounds, and pharmaceutically acceptable salts of the compounds or the optical isomers. The compounds, isomers, and salts exhibit excellent activity as GLP-1 receptor agonists. In particular, they, as GLP-1 receptor agonists, exhibit excellent glucose tolerance, thus having a great potential to be used as therapeutic agents for metabolic diseases. Moreover, they exhibit excellent pharmacological safety for cardiovascular systems.

Abstract: An ultrasonic image providing method of the present disclosure includes: receiving ultrasonic images; measuring a plurality of similarities for a plurality of measurement items for at least one of the ultrasonic images; comparing the plurality of similarities with corresponding default thresholds, respectively; when none of the plurality of similarities is greater than the corresponding default threshold, selecting a measurement item maintaining the greatest similarity among the plurality of similarities for a reference time; and providing an ultrasonic image for the selected measurement item as an ultrasonic image.

Abstract: The present invention provides methods for treating or ameliorating metabolic diseases, cholestatic liver diseases, or organ fibrosis, which comprises administering to a subject a therapeutically effective amount of a pharmaceutical composition comprising an isoxazole derivative, a racemate, an enantiomer, or a diastereoisomer thereof, or a pharmaceutically acceptable salt of the derivative, the racemate, the enantiomer, or the diastereoisomer.

Abstract: A semiconductor device includes a substrate including a first side and a second side opposite to the first side, a first power rail and a second power rail provided on the first side of the substrate, the first power rail and the second power rail extending in a first direction and being separated in a second direction, a first active region and a second active region provided on the first side of the substrate, the first active region and the second active region being defined by an element separation film between the first power rail and the second power rail and being separated in the second direction, a power delivery network provided on the second side of the substrate, and a first power through via penetrating the element separation film and the substrate, the first power through via connecting the power delivery network and the first power rail.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including a first side and a second side that are opposite to each other, a power tap cell in a first row, a second row adjacent to the first row, and a third row adjacent to the second row, on the first side of the substrate, a first power rail and a second power rail on the power tap cell, that extend in a first direction and are spaced apart from each other in a second direction, and a power delivery network on the second side of the substrate. The power tap cell includes a first power through via that penetrates the substrate and extends from the power delivery network to the first power rail, and a second power through via that penetrates the substrate and extends from the power delivery network to the second power rail.

Abstract: Provided are a LIDAR apparatus based on a time of flight and a moving object which output an electrical signal by transmitting and receiving light, generate a control signal by analyzing the electrical signal, measure a pin point distance by calculating a time of flight of the light based on the control signal, and process point cloud data generated based on a measured distance to accurately construct information on a surrounding environment.

Abstract: Provided are a LIDAR apparatus based on a time of flight and a moving object which output an electrical signal by transmitting and receiving light, generate a control signal by analyzing the electrical signal, measure a pin point distance by calculating a time of flight of the light based on the control signal, and process point cloud data generated based on a measured distance to accurately construct information on a surrounding environment.

Abstract: Provided are a LIDAR apparatus based on a time of flight and a moving object which output an electrical signal by transmitting and receiving light, generate a control signal by analyzing the electrical signal, measure a pin point distance by calculating a time of flight of the light based on the control signal, and process point cloud data generated based on a measured distance to accurately construct information on a surrounding environment.

Abstract: A semiconductor device includes first to fourth cells sequentially disposed on a substrate, first to third diffusion break structures, a first fin structure configured to protrude from the substrate, the first fin structure comprising first to fourth fins separated from each other by the first to third diffusion break structures, a second fin structure configured to protrude from the substrate, to be spaced apart from the first fin structure, the second fin structure comprising fifth to eighth fins separated from each other by the first to third diffusion break structures, the first to fourth gate electrodes being disposed in the first to fourth cells, respectively, and the number of fins in one cell of the first to fourth cells is different from the number of fins in an other cell of the first to fourth cells.

Abstract: A semiconductor device includes first to fourth cells sequentially disposed on a substrate, first to third diffusion break structures, a first fin structure configured to protrude from the substrate, the first fin structure comprising first to fourth fins separated from each other by the first to third diffusion break structures, a second fin structure configured to protrude from the substrate, to be spaced apart from the first fin structure, the second fin structure comprising fifth to eighth fins separated from each other by the first to third diffusion break structures, the first to fourth gate electrodes being disposed in the first to fourth cells, respectively, and the number of fins in one cell of the first to fourth cells is different from the number of fins in an other cell of the first to fourth cells.

Abstract: Provided are a LIDAR apparatus based on a time of flight and a moving object which output an electrical signal by transmitting and receiving light, generate a control signal by analyzing the electrical signal, measure a pin point distance by calculating a time of flight of the light based on the control signal, and process point cloud data generated based on a measured distance to accurately construct information on a surrounding environment.

Abstract: A multi-level memory device may include a most significant bit (MSB) determination circuit configured to determine a plurality of MSBs by comparing a cell current flowing through a memory cell with a predetermined reference current, a current/voltage conversion circuit configured to convert a copied cell current obtained by copying the cell current into a cell voltage, a charging time determination circuit configured to determine a charging time during which the copied cell current is converted into the cell voltage and output a charging end signal, and a least significant bit (LSB) determination circuit configured to determine a plurality of LSBs according to the cell voltage and the charging end signal.

Abstract: A multi-level memory device may include a most significant bit (MSB) determination circuit configured to determine a plurality of MSBs by comparing a cell current flowing through a memory cell with a predetermined reference current, a current/voltage conversion circuit configured to convert a copied cell current obtained by copying the cell current into a cell voltage, a charging time determination circuit configured to determine a charging time during which the copied cell current is converted into the cell voltage and output a charging end signal, and a least significant bit (LSB) determination circuit configured to determine a plurality of LSBs according to the cell voltage and the charging end signal.

Abstract: A multi-level memory apparatus includes two or more current paths configured to pass currents having different levels, a memory cell selectively coupled to the two or more current paths, and a cell current copy unit configured to copy a cell current flowing through the memory cell.

Abstract: A multi-level memory apparatus includes two or more current paths configured to pass currents having different levels, a memory cell selectively coupled to the two or more current paths, and a cell current copy unit configured to copy a cell current flowing through the memory cell.