Abstract: The disclosed technology provides a manufacturing method of a target comprising obtaining an initial mass and a residual mass of the target sample, and calculating an etching mass; determining a relative etching depth of the target sample; calculating a relative etching mass based on the etching mass and the relative etching depth; determining a utilization parameter of the target sample based on the relative etching mass and the initial mass of the target sample before being used; and performing a simulation and optimization process on the utilization parameter of the target sample, obtaining target parameters corresponding to a preset value of the utilization parameter, and outputting the target parameters to a manufacturing control center for manufacturing a target. The disclosed technology also provides a manufacturing system of a target.

Abstract: An embodiment of the present invention relates to a color filter substrate, comprising: a transparent substrate, a black matrix unit being arranged on the transparent substrate, and color resin coatings. The black matrix unit may comprises first sub black matrices, being configured to be a forming foundation of the color resin coatings; and second sub black matrices, being configured to be on the first sub black matrices, and be filled between the color resin coatings after the color resin coatings have been formed. At least a portion of the first sub black matrices are covered by the color resin coatings formed after the first sub black matrices are formed. And a sum of a thickness of the first sub black matrix and a thickness of the second sub black matrix is not less than a minimum thickness value satisfying a shading requirement.

Abstract: The disclosed technology provides a manufacturing method of a target comprising obtaining an initial mass and a residual mass of the target sample, and calculating an etching mass; determining a relative etching depth of the target sample; calculating a relative etching mass based on the etching mass and the relative etching depth; determining a utilization parameter of the target sample based on the relative etching mass and the initial mass of the target sample before being used; and performing a simulation and optimization process on the utilization parameter of the target sample, obtaining target parameters corresponding to a preset value of the utilization parameter, and outputting the target parameters to a manufacturing control center for manufacturing a target. The disclosed technology also provides a manufacturing system of a target.