Patents by Inventor Jo Shimizu
Jo Shimizu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230202237Abstract: A tire 2 includes a tread 4 and a belt 14 including inner and outer layers 38 and 40. Each end of the outer layer 40 is located axially inward of an end of the inner layer 38. A circumferential narrow groove 48 is formed on each shoulder land portion 46s so as to continuously extend in a circumferential direction. A groove width of the circumferential narrow groove 48 is smaller than that of a shoulder circumferential groove 44s. The circumferential narrow groove 48 is located between the shoulder circumferential groove 44s and the end of the outer layer 40 in an axial direction. A ratio of a distance in the axial direction from the shoulder circumferential groove 44s to the circumferential narrow groove 48 to a distance in the axial direction from the shoulder circumferential groove 44s to the end of the outer layer 40 is 15% to 55%.Type: ApplicationFiled: December 20, 2022Publication date: June 29, 2023Applicant: Sumitomo Rubber Industries, Ltd.Inventors: Hiroshi KIKUCHI, Takuya OSAWA, Jo SHIMIZU
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Patent number: 10388517Abstract: An epitaxial substrate for an electronic device, in which a lateral direction of the substrate is defined as a main current conducting direction and a warp configuration of the epitaxial substrate is adequately controlled, as well as a method of producing the epitaxial substrate. Specifically, the epitaxial substrate for an electron device, including: a Si single crystal substrate; and a Group III nitride laminated body formed by epitaxially growing plural Group III nitride layers on the Si single crystal substrate, wherein a lateral direction of the epitaxial substrate is defined as a main current conducting direction, is characterized in that the Si single crystal substrate is a p-type substrate having a specific resistance value of not larger than 0.01 ?·cm.Type: GrantFiled: July 16, 2012Date of Patent: August 20, 2019Assignee: DOWA ELECTRONICS MATERIALS CO., LTD.Inventors: Tetsuya Ikuta, Jo Shimizu, Tomohiko Shibata
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Patent number: 8847203Abstract: A Group III nitride epitaxial laminate substrate comprising a substrate, a buffer and a main laminate in this order, wherein the buffer includes an initial growth layer, a first superlattice laminate and a second superlattice laminate in this order, the first superlattice laminate includes five to 20 sets of first AlN layers and second GaN layers, the first AlN layers and the second GaN layers being alternately stacked, and each one set of the first AlN layer and the second GaN layer has a thickness of less than 44 nm, the second superlattice laminate includes a plurality of sets of first layers made of an AlN material or an AlGaN material and second layers made of an AlGaN material having a different band gap from the first layers, the first and second layers being alternately stacked.Type: GrantFiled: November 4, 2010Date of Patent: September 30, 2014Assignee: Dowa Electronics Materials Co, Ltd.Inventors: Tetsuya Ikuta, Jo Shimizu, Tomohiko Shibata
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Patent number: 8426893Abstract: An epitaxial substrate for electronic devices is provided, which can improve vertical breakdown voltage and provides a method of producing the same. The epitaxial substrate includes a conductive SiC single crystal substrate, a buffer as an insulating layer on the SiC single crystal substrate, and a main laminate formed by epitaxially growing a plurality of Group III nitride layers on the buffer. Further, the buffer includes at least an initial growth layer in contact with the SiC single crystal substrate and a superlattice laminate having a superlattice multi-layer structure on the initial growth layer. The initial growth layer is made of a Ba1Alb1Gac1Ind1N material. Furthermore, the superlattice laminate is configured by alternately stacking a first layer made of a Ba2Alb2Gac2Ind2N material and a second layer made of a Ba3Alb3Gac3Ind3N material having a different band gap from the first layer.Type: GrantFiled: May 10, 2010Date of Patent: April 23, 2013Assignee: Dowa Electronics Materials Co., Ltd.Inventors: Tetsuya Ikuta, Jo Shimizu, Tomohiko Shibata, Ryo Sakamoto, Tsuneo Ito
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Patent number: 8410472Abstract: An epitaxial substrate for an electronic device having a Si single crystal substrate, a buffer as an insulating layer formed on the Si single crystal substrate, and a main laminated body formed by plural group III nitride layers epitaxially grown on the buffer, wherein a lateral direction of the epitaxial substrate is defined as an electric current conducting direction. The buffer including at least an initially grown layer in contact with the Si single crystal substrate and a superlattice laminate constituted of a superlattice multilayer structure on the initially grown layer.Type: GrantFiled: December 14, 2009Date of Patent: April 2, 2013Assignee: Dowa Electronics Materials Co., Ltd.Inventors: Tetsuya Ikuta, Jo Shimizu, Tomohiko Shibata
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Patent number: 8344356Abstract: A semiconductor material is provided comprising: a composition graded layer, formed on a Si substrate or an interlayer formed thereon, comprising a composition of AlXGa1-XN graded such that a content ratio of Al in the composition decreases continuously or discontinuously in a crystal growing direction; a superlattice composite layer, formed on the composition graded layer, comprising a high Al-containing layer comprising a composition of AlYGa1-YN and a low Al-containing layer comprising a composition of AlZGa1-ZN that are laminated alternately; and a nitride semiconductor layer formed on the superlattice composite layer.Type: GrantFiled: December 17, 2008Date of Patent: January 1, 2013Assignees: Dowa Electronics Materials Co., Ltd., National University Corporation Nagoya Institute of TechnologyInventors: Ryo Sakamoto, Jo Shimizu, Tsuneo Ito, Takashi Egawa
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Publication number: 20120273759Abstract: An epitaxial substrate for an electronic device, in which a lateral direction of the substrate is defined as a main current conducting direction and a warp configuration of the epitaxial substrate is adequately controlled, as well as a method of producing the epitaxial substrate. Specifically, the epitaxial substrate for an electron device, including: a Si single crystal substrate; and a Group III nitride laminated body formed by epitaxially growing plural Group III nitride layers on the Si single crystal substrate, wherein a lateral direction of the epitaxial substrate is defined as a main current conducting direction, is characterized in that the Si single crystal substrate is a p-type substrate having a specific resistance value of not larger than 0.01 ?·cm.Type: ApplicationFiled: July 16, 2012Publication date: November 1, 2012Applicant: DOWA ELECTRONICS MATERIALS CO., LTD.Inventors: Tetsuya IKUTA, Jo SHIMIZU, Tomohiko SHIBATA
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Publication number: 20120223328Abstract: A Group III nitride epitaxial laminate substrate comprising a substrate, a buffer and a main laminate in this order, wherein the buffer includes an initial growth layer, a first superlattice laminate and a second superlattice laminate in this order, the first superlattice laminate includes five to 20 sets of first AlN layers and second GaN layers, the first AlN layers and the second GaN layers being alternately stacked, and each one set of the first AlN layer and the second GaN layer has a thickness of less than 44 nm, the second superlattice laminate includes a plurality of sets of first layers made of an AlN material or an AlGaN material and second layers made of an AlGaN material having a different band gap from the first layers, the first and second layers being alternately stacked.Type: ApplicationFiled: November 4, 2010Publication date: September 6, 2012Applicant: DOWA ELECTRONICS MATERIALS CO., LTD.Inventors: Tetsuya Ikuta, Jo Shimizu, Tomohiko Shibata
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Publication number: 20120091435Abstract: An epitaxial substrate for electronic devices is provided, which can improve vertical breakdown voltage and provides a method of producing the same. The epitaxial substrate includes a conductive SiC single crystal substrate, a buffer as an insulating layer on the SiC single crystal substrate, and a main laminate formed by epitaxially growing a plurality of Group III nitride layers on the buffer. Further, the buffer includes at least an initial growth layer in contact with the SiC single crystal substrate and a superlattice laminate having a superlattice multi-layer structure on the initial growth layer. The initial growth layer is made of a Ba1Alb1Gac1Ind1N material. Furthermore, the superlattice laminate is configured by alternately stacking a first layer made of a Ba2Alb2Gac2Ind2N material and a second layer made of a Ba3Alb3Gac3Ind3N material having a different band gap from the first layer.Type: ApplicationFiled: May 10, 2010Publication date: April 19, 2012Applicant: DOWA ELECTRONICS MATERIALS CO., LTD.Inventors: Tetsuya Ikuta, Jo Shimizu, Tomohiko Shibata, Ryo Sakamoto, Tsuneo Ito
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Publication number: 20110298009Abstract: An object of the present invention is to provide an epitaxial substrate for an electronic device, in which a lateral direction of the substrate is defined as a main current conducting direction and a warp configuration of the epitaxial substrate is adequately controlled, as well as a method of producing the epitaxial substrate. Specifically, the epitaxial substrate for an electron device, including: a Si single crystal substrate; and a Group III nitride laminated body formed by epitaxially growing plural Group III nitride layers on the Si single crystal substrate, wherein a lateral direction of the epitaxial substrate is defined as a main current conducting direction, is characterized in that the Si single crystal substrate is a p-type substrate having a specific resistance value of not larger than 0.01 ?·cm.Type: ApplicationFiled: November 18, 2009Publication date: December 8, 2011Applicant: DOWA ELECTRONICS MATERIALS CO., LTD.Inventors: Tetsuya Ikuta, Jo Shimizu, Tomohiko Shibata
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Publication number: 20110240962Abstract: An epitaxial substrate for an electronic device having a Si single crystal substrate, a buffer as an insulating layer formed on the Si single crystal substrate, and a main laminated body formed by plural group III nitride layers epitaxially grown on the buffer, wherein a lateral direction of the epitaxial substrate is defined as an electric current conducting direction. The buffer including at least an initially grown layer in contact with the Si single crystal substrate and a superlattice laminate constituted of a superlattice multilayer structure on the initially grown layer.Type: ApplicationFiled: December 14, 2009Publication date: October 6, 2011Applicant: DOWA ELECTRONICS MATERIALS CO., LTD.Inventors: Tetsuya Ikuta, Jo Shimizu, Tomohiko Shibata
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Publication number: 20110001127Abstract: A semiconductor material is provided comprising: a composition graded layer, formed on a Si substrate or an interlayer formed thereon, comprising a composition of AlXGa1-XN graded such that a content ratio of Al in the composition decreases continuously or discontinuously in a crystal growing direction; a superlattice composite layer, formed on the composition graded layer, comprising a high Al-containing layer comprising a composition of AlYGa1-YN and a low Al-containing layer comprising a composition of AlZGa1-ZN that are laminated alternately; and a nitride semiconductor layer formed on the superlattice composite layer.Type: ApplicationFiled: December 17, 2008Publication date: January 6, 2011Applicants: DOWA ELECTRONICS MATERIALS CO., LTD., NATIONAL UNIVERSITY CORPORATION NAGOYA INSTITUTE OF TECHNOLOGYInventors: Ryo Sakamoto, Jo Shimizu, Tsuneo Ito, Takashi Egawa