Abstract: Provided is a recombinant microorganism including at least two genes for producing itaconic acid and its derived monomers, and the at least two genes are located on the same expression vector. The at least two genes include one encoding cis-aconitic acid decarboxylase and the other one encoding aconitase, and the genome of the recombinant microorganism includes a gene encoding the molecular chaperone protein GroELS. Also provided is a method for producing itaconic acid by using the microorganism.

Abstract: A circuit includes a voltage divider circuit configured to generate a feedback voltage according to an output voltage, an operational amplifier configured to output a driving signal according to the feedback voltage and a reference voltage and a pass gate circuit including multiple current paths. The current paths are controlled by the driving signal and connected in parallel between the voltage divider circuit and a power reference node.

Abstract: A HDP CVD process for depositing a USG liner followed by a FSG dielectric layer on a metal line pattern is described. The substrate is heated in a chamber with a plasma comprised of Ar and O2. A USG liner is deposited in two steps wherein the first step is without an RF bias and the second step is with a moderate RF bias that does not damage the metal lines or an anti-reflective coating on the metal. The moderate RF bias is critical in forming a sputtering component that redeposits USG to form more uniform sidewalls and better coverage at top corners of metal lines. The USG deposition process has a good gap filling capability and significantly reduces device failure rate by preventing corrosion of metal lines during subsequent thermal process cycles. The method also includes a PECVD deposited FSG layer that is planarized to complete an IMD layer.

Abstract: A HDP CVD process for depositing a USG liner followed by a FSG dielectric layer on a metal line pattern is described. The substrate is heated in a chamber with a plasma comprised of Ar and O2. A USG liner is deposited in two steps wherein the first step is without an RF bias and the second step is with a moderate RF bias that does not damage the metal lines or an anti-reflective coating on the metal. The moderate RF bias is critical in forming a sputtering component that redeposits USG to form more uniform sidewalls and better coverage at top corners of metal lines. The USG deposition process has a good gap filling capability and significantly reduces device failure rate by preventing corrosion of metal lines during subsequent thermal process cycles. The method also includes a PECVD deposited FSG layer that is planarized to complete an IMD layer.