Abstract: The invention relates to a plasma treatment device with a treatment chamber, at least one pair of microwave plasma sources and at least one voltage source. Each pair of microwave plasma sources consists of a first microwave plasma source and a second microwave plasma source, wherein the first and the second microwave plasma source each have a plasma source wall and, within this, a microwave coupling-in device and a plasma electrode. The first and the second microwave plasma source are arranged within the treatment chamber on the same side of one or more substrates to be processed and adjacently to one another. The plasma electrodes of the first microwave plasma source and the second microwave plasma source are electrically insulated from one another and electrically conductively connected to the at least one voltage source. Here, the at least one voltage source is suitable for supplying the plasma electrodes of the first and the second microwave plasma source with different potentials.

Abstract: The present invention relates to a process module comprising at least one evacuable process chamber located in the process module and at least one support device being horizontally moveable through the process module in at least one substrate transport direction for accommodating respectively at least one flat substrate which is to be processed in the process chamber. It is the object of the present invention to provide a process module of the above-mentioned type, which allows a consistent and high-quality processing of all substrates at high production speed and at the lowest device costs possible. Said object is solved by a process module of the above mentioned type in which the at least one process chamber is physically closeable with respect to the process module by means of the support device, the position of which is changeable in at least one closing direction transverse to the substrate transport direction, wherein the at least one support device forms a bottom of the at least one process chamber.

Abstract: The invention relates to a plasma treatment device with a treatment chamber, at least one pair of microwave plasma sources and at least one voltage source. Each pair of microwave plasma sources consists of a first microwave plasma source and a second microwave plasma source, wherein the first and the second microwave plasma source each have a plasma source wall and, within this, a microwave coupling-in device and a plasma electrode. The first and the second microwave plasma source are arranged within the treatment chamber on the same side of one or more substrates to be processed and adjacently to one another. The plasma electrodes of the first microwave plasma source and the second microwave plasma source are electrically insulated from one another and electrically conductively connected to the at least one voltage source. Here, the at least one voltage source is suitable for supplying the plasma electrodes of the first and the second microwave plasma source with different potentials.

Abstract: A substrate processing device contains a substrate loading/unloading area for loading/unloading of substrates. The substrate processing device further has a process chamber, a carrier device with which the substrates are transported by a carrier transport device to the process chamber, and a gas-tight closing device between the process chamber and the carrier transport area as well as a gas-tight closing device between the substrate loading/unloading area and the carrier transport area. The substrate processing device allows substrate processing at a high quality with high process purity, thereby being suitable for mass production. The object is achieved by the substrate loading/unloading area being coupled with the carrier transport area by a substrate transfer area with a substrate transfer device for transferring the substrates from a substrate cassette provided in the substrate loading/unloading area and in which substrates can be arranged in different horizontal cassette levels of the substrate cassette.

Abstract: The invention relates to a device for extracting electrical charge carriers from a charge carrier generation chamber with at least one electrode arrangement for extracting charge carriers, wherein the at least one electrode arrangement has at least a first grid electrode and a second grid electrode with corresponding openings. The first and the second grid electrode each contain at least one first electrically conductive grid electrode region, wherein the at least one first grid electrode region of the first grid electrode is configured in a first layer and the at least one first grid electrode region of the second grid electrode is configured in a second layer.

Abstract: The subject matter of the instant invention is a plasma generation device in which at least one inductive device and at least one capacitive device are provided for coupling energy into a plasma in a plasma chamber. The at least one inductive device and the at least one capacitive device can be supplied with energy separately from one another by different frequency generators or by a common frequency generator.

Abstract: A device for gas movement in vacuum-coating systems is disclosed that extracts gaseous coating material in the coating chamber that has not been deposited on the substrates to be coated. At least one pump for extracting the coating material is connected to it in an axial extension of the suction device; the suction device has one or more suction openings and is divided up into at least two axial areas whose suction characteristics can be adjusted separately from one another to a great extent.

Abstract: A microwave plasma generating device has a plasma chamber. A microwave generating device is provided outside of the plasma chamber, and the microwaves are coupled into the plasma chamber via a microwave in-coupling device. The microwave in-coupling device has an inner conductor which leads into the plasma chamber through a chamber wall of the plasma chamber, an insulating tube which encloses the inner conductor and separates the inner conductor from an interior of the plasma chamber, and an outer conductor which leads into the plasma chamber through the chamber wall and which is coaxial to the inner conductor. The outer conductor has an outer conductor end in the plasma chamber. The inner and outer conductors form a microwave line, an outlet of microwaves out of the microwave line is provided in the plasma chamber to generate microwave plasma in the interior of the plasma chamber.

Abstract: A method and a device for carrying out the method for processing surfaces of workpieces, preferably of large substrates, are presented. The intent is to arrange the processing devices on the casing of a drum-type carrier in a vacuum chamber. The workpiece is transported over the drum and optionally made to rotate. The drum-type carriers is rotated in such a way that the intended processing device is turned towards the workpiece and can process it. The surface section to be processed can be selected via translation and rotation.

Abstract: The subject matter of the instant invention is a plasma generation device in which at least one inductive device and at least one capacitive device are provided for coupling energy into a plasma in a plasma chamber. The at least one inductive device and the at least one capacitive device can be supplied with energy separately from one another by different frequency generators or by a common frequency generator.

Abstract: In an ion implantation device and a method for the ion implantation of a substrate, plasma having an ion density of at least 1010 cm?3, is generated by a plasma source in a discharge space. The discharge space is delimited in the direction of the substrate to be implanted by a plasma-delimiting wall. The plasma-delimiting wall being at a plasma potential, and a pressure in the discharge space is higher than the pressure in the space in which the substrate is situated in the ion implantation device. The substrate bears on a substrate support, with its substrate surface opposite the plasma-delimiting wall. The substrate and/or the substrate support are/is utilized as a substrate electrode, which is put at a high negative potential relative to the plasma that ions are accelerated from the plasma in the direction of the substrate and implanted into the substrate.

Abstract: A capacitive-coupled parallel plate plasma enhanced chemical vapor deposition reactor includes a gas distribution unit that is integrated in an RF electrode and is formed with a gas outlet. The parallel plate reactor is configured so that layers with high thickness homogeneity and quality can be produced. The capacitively coupled parallel plate plasma enhanced vapor deposition reactor has gas distribution unit with a multiple-stage showerhead constructed in such a way that it provides an independent adjustment of gas distribution and gas emission profile of the gas distribution unit.

Abstract: A device for gas movement in vacuum-coating systems is disclosed that extracts gaseous coating material in the coating chamber that has not been deposited on the substrates to be coated. At least one pump for extracting the coating material is connected to it in an axial extension of the suction device; the suction device has one or more suction openings and is divided up into at least two axial areas whose suction characteristics can be adjusted separately from one another to a great extent.

Abstract: A process module includes at least one evacuable process chamber in the process module and at least one support device horizontally moveable through the process module in at least one substrate transport direction for respectively accommodating at least one flat substrate to be processed in the process chamber. The process module allows consistent and high-quality processing of all substrates at high production speed and at the lowest device costs possible. In the process module the at least one process chamber is physically closeable with respect to the process module by the support device, the position of which is changeable in at least one closing direction transverse to the substrate transport direction and the at least one support device forms a bottom of the at least one process chamber.

Abstract: A microwave plasma generating device has a plasma chamber. A microwave generating device is provided outside of the plasma chamber, and the microwaves are coupled into the plasma chamber via a microwave in-coupling device. The microwave in-coupling device has an inner conductor which leads into the plasma chamber through a chamber wall of the plasma chamber, an insulating tube which encloses the inner conductor and separates the inner conductor from an interior of the plasma chamber, and an outer conductor which leads into the plasma chamber through the chamber wall and which is coaxial to the inner conductor. The outer conductor has an outer conductor end in the plasma chamber. The inner and outer conductors form a microwave line, an outlet of microwaves out of the microwave line is provided in the plasma chamber to generate microwave plasma in the interior of the plasma chamber.

Abstract: A substrate processing device contains a substrate loading/unloading area for loading/unloading of substrates. The substrate processing device further has a process chamber, a carrier device with which the substrates are transported by a carrier transport device to the process chamber, and a gas-tight closing device between the process chamber and the carrier transport area as well as a gas-tight closing device between the substrate loading/unloading area and the carrier transport area. The substrate processing device allows substrate processing at a high quality with high process purity, thereby being suitable for mass production. The object is achieved by the substrate loading/unloading area being coupled with the carrier transport area by a substrate transfer area with a substrate transfer device for transferring the substrates from a substrate cassette provided in the substrate loading/unloading area and in which substrates can be arranged in different horizontal cassette levels of the substrate cassette.

Abstract: A method and device for ion beam processing of surfaces of a substrate positions the substrate to face an ion beam, and a new technologically-defined pattern of properties is established. According to the method, the current geometrical effect pattern of the ion beam on the surface of the substrate is adjusted depending on the known pattern of properties and the new technologically-defined pattern of properties, and depending upon the progress of the processing, by modifying the beam characteristic and/or by pulsing the ion beam. A device for carrying out the method includes a substrate support for holding at least one substrate, which can be moved along an Y-axis and an X-axis, and an ion beam source for generating an ion beam, which is perpendicular to the surface to be processed of the substrate in the Z-axis or which may be arranged in an axis, inclined in relation to the Z-axis. The distance between the ion beam source and the surface to be processed of the substrate may be fixed or variable.

Abstract: In an ion implantation device and a method for the ion implantation of a substrate, a plasma having an ion density of at least 1010 cm?3, is generated by a plasma source in a discharge space. The discharge space is delimited in the direction of the substrate to be implanted by a plasma-delimiting wall. The plasma-delimiting wall being at plasma potential, and a pressure in the discharge space is higher than the pressure in the space in which the substrate is situated in the ion implantation device. The substrate bears on a substrate support, with its substrate surface opposite the plasma-delimiting wall. The substrate and/or the substrate support are/is utilized as a substrate electrode, which is put at a high negative potential relative to the plasma that ions are accelerated from the plasma in the direction of the substrate and implanted into the substrate.

Abstract: A capacitive-coupled parallel plate plasma enhanced chemical vapor deposition reactor includes a gas distribution unit that is integrated in an RF electrode and is formed with a gas outlet. The parallel plate reactor is configured so that layers with high thickness homogeneity and quality can be produced. The capacitively coupled parallel plate plasma enhanced vapor deposition reactor has gas distribution unit with a multiple-stage showerhead constructed in such a way that it provides an independent adjustment of gas distribution and gas emission profile of the gas distribution unit.

Abstract: The invention relates to an ECR plasma source comprising a coaxial microwave supply line with an internal conductor and an external conductor, wherein the internal conductor with one end as the antenna passes through a vacuum flange in insulated fashion, which vacuum flange closes off an opening in the wall to the plasma space. A multipole magnet arrangement is provided coaxially with respect to the microwave supply line and its magnetic fields pass through the vacuum flange and form an annular-gap magnetic field in the plasma space coaxially with respect to the antenna.