Abstract: A method and a system for the automated digital archiving of data comprises (1) a writing step in which data are subjected to a first algorithm producing an encoded file which is written into or onto a durable storage medium, preferably with an expected lifetime exceeding 50 years, in a machine-recognizable pattern with a predefined high density and (2) a reading step, in which the storage medium is scanned to obtain an image of the pattern, e.g. a raster graphic of the image, transferring the image to a memory, and storing it therein. Subsequently, by means of pattern recognition, the bits in the data pattern are identified, the value/sequence of these bits determined, and a bit stream for readout produced.

Abstract: A capacitor and capacitor-like device or any other device showing capacitive effects, including FETs, transmission lines, piezoelectric and ferroelectric devices, etc., with at least two electrodes, of which at least one electrode consists of or comprises a material or is generated as electron system, whose absolute value of the electronic charging energy as defined by the charging-induced change of Ekin+Eexc+Ecorr exceeds 10% of the charging-induced change of the Coulomb field energy of the capacitor according to E=Ecoul+Ekin+Eexc+Ecorr. Therein, E is the energy of a capacitor and Ecoul=Q2/2 Ccoul=Q2d/(2 ?0 ?x A), A is the area of the capacitor electrodes, d is the distance and ?0?x the dielectric constant between them. Ecorr describes the correlation energy, Ekin the electronic kinetic energy and Eexc the exchange energy of the electrode material.

Abstract: The present invention concerns the improvement of the supercurrent carrying capabilities, i.e. the increase of critical current densities, of polycrystalline superconductor structures, especially of high-Tcsuperconductors. By modifying the microstructure of the substrate or by appropriately influencing the buffer layers in coated conductors to obtain grains with large aspect ratios which are predominantly oriented along the direction of the current flow, grain boundaries with large areas are obtained in the polycrystalline superconducting film that can support large critical currents along the superconductor. Thereby large critical currents are obtained in the superconductor for a given spread of misorientation angles of the grains.

Abstract: The present invention concerns the improvement of the supercurrent carrying capabilities, i.e. the increase of critical current densities, of bicrystalline or polycrystalline superconductor structures, especially of high-Tc superconductors. By providing an appropriate predetermined dopant profile across the superconductor structure, in particular within or in the vicinity of the grain boundaries, the space-charge layers at the grain boundaries are reduced and thereby the current transport properties of the superconductor significantly improved. Simultaneously, the influence of magnetic fields on the critical current densities is significantly reduced, which in turn enhances the overall supercurrent carrying capabilities while keeping the supercurrent transport properties of the grains at good values.

Abstract: The present invention concerns the improvement of the supercurrent carrying capabilities, i.e. the increase of critical current densities, of bicrystalline or polycrystalline superconductor structures, especially of high-Tc superconductors. By providing an appropriate predetermined dopant profile across the superconductor structure, in particular within or in the vicinity of the grain boundaries, the space-charge layers at the grain boundaries are reduced and thereby the current transport properties of the superconductor significantly improved. Simultaneously, the influence of magnetic fields on the critical current densities is significantly reduced, which in turn enhances the overall supercurrent carrying capabilities while keeping the supercurrent transport properties of the grains at good values.

Abstract: The present invention concerns the improvement of the supercurrent carrying capabilities, i.e. the increase of critical current densities, of bicrystalline or polycrystalline superconductor structures, especially of high-Tc superconductors. By providing an appropriate predetermined dopant profile across the superconductor structure, in particular within or in the vicinity of the grain boundaries, the space-charge layers at the grain boundaries are reduced and thereby the current transport properties of the superconductor significantly improved. Simultaneously, the influence of magnetic fields on the critical current densities is significantly reduced, which in turn enhances the overall supercurrent carrying capabilities while keeping the supercurrent transport properties of the grains at good values.

Abstract: The present invention concerns an enhancement of the supercurrent carrying capabilities of bicrystalline or polycrystalline high-Tc superconductors, i.e. the critical current densities in such superconductors. The current transport properties are improved by chemically altering, especially doping, the superconductors. It seems that a modification of the space-charge layers at the boundary, e.g. by an increase of the mobile charge carrier concentrations particularly in the superconductor's grain boundaries, which concentrations differ from those resulting in optimum superconducting properties of the grains, are responsible for this positive effect.

Abstract: The present invention concerns the improvement of the supercurrent carrying capabilities, i.e. the increase of critical current densities, of bicrystalline or polycrystalline superconductor structures, especially of high-Tc superconductors. By providing an appropriate predetermined dopant profile across the superconductor structure, in particular within or in the vicinity of the grain boundaries, the space-charge layers at the grain boundaries are reduced and thereby the current transport properties of the superconductor significantly improved. Simultaneously, the influence of magnetic fields on the critical current densities is significantly reduced, which in turn enhances the overall supercurrent carrying capabilities while keeping the supercurrent transport properties of the grains at good values.