Abstract: A method for aligning a mirror of a microlithographic projection exposure apparatus, according to one formulation, involves: recording a first partial interferogram between a wave reflected at a first mirror segment (101) and a reference wave reflected at a reference surface (110, 310, 510), recording a second partial interferogram between a wave reflected at a second mirror segment (102) and a reference wave reflected at the reference surface, determining a phase offset between the first partial interferogram and the second partial interferogram, and aligning the first mirror segment and the second mirror segment in relation to one another in accordance with the determined phase offset, so that the distance of the relevant mirror segments (101, 102) from a respective predetermined, hypothetical surface in the direction of the respective surface normal is less than ?/10 at each point on the mirror segments, where ? denotes the operating wavelength of the mirror.

Abstract: One aspect of the present invention relates to a mask inspection system for inspecting lithography masks, including a placement table for placing a lithography mask to be inspected, a first optical unit with a first beam path for examining structures of the lithography mask, and a second optical unit with a second beam path for establishing a position of at least one edge of the lithography mask. Here, the second beam path of the second optical unit passes at least once through a plane defined by the placement table.

Abstract: A measurement arrangement (10) and an associated method for interferometrically determining the surface shape (12) of a test object (14) includes a light source (16) providing an input wave (18) and a diffractive optical element (24). The diffractive optical element is configured to produce in each case by way of diffraction from the input wave a test wave (26), which is directed at the test object (14) and has a wavefront that is adapted at least partially to a desired shape of the optical surface, and a reference wave (28). The measurement arrangement furthermore includes a reflective optical element (30) that back-reflects the reference wave (28) and a capture device (36) that captures an interferogram produced by superposing the test wave after interaction with the test object and the back-reflected reference wave (28), in each case after a further diffraction at the diffractive optical element in a capture plane (48).

Abstract: A measurement arrangement and a method for measuring a wavefront aberration of an imaging optical system (10) of a microlithographic projection exposure apparatus. The method includes separate measurement of respective wavefront aberrations of different partial arrangements (M1; M2; M3; M1, M3) of the optical elements.

Abstract: A projection exposure tool for microlithography for imaging mask structures of an image-providing substrate onto a substrate to be structured includes a measuring apparatus configured to determine a relative position of measurement structures disposed on a surface of one of the substrates in relation to one another in at least one lateral direction with respect to the substrate surface and to thereby simultaneously measure a number of measurement structures disposed laterally offset in relation to one another.

Abstract: A test appliance and a method for testing a mirror, e.g., a mirror of a microlithographic projection exposure apparatus. The test appliance has a computer-generated hologram (CGH), and a test can be carried out on at least a portion of the mirror by way of an interferometric superposition of a test wave that is directed onto the mirror by this computer-generated hologram and a reference wave. Here, the computer-generated hologram (CGH) (120, 320) is designed in such a way that, during operation of the appliance, it provides a first test wave for testing a first portion of the mirror (101, 301) by interferometric superposition with a reference wave in a first position of the mirror (101, 301) and at least a second test wave for testing a second portion of the mirror (101, 301) by interferometric superposition with a reference wave in a second position of the mirror (101, 301).

Abstract: A projection exposure tool for microlithography for imaging mask structures of an image-providing substrate onto a substrate to be structured includes a measuring apparatus configured to determine a relative position of measurement structures disposed on a surface of one of the substrates in relation to one another in at least one lateral direction with respect to the substrate surface and to thereby simultaneously measure a number of measurement structures disposed laterally offset in relation to one another.

Abstract: A mirror (M) of a projection exposure apparatus for microlithography configured for structured exposure of a light-sensitive material and a method for producing a mirror (M). The mirror (M) has a substrate body (B), a first mirror surface (S) and a second mirror surface (S?). The first mirror surface (S) is formed on a first side (VS) of the substrate body (B). The second mirror surface (S?) is formed on a second side (RS) of the substrate body (B), the second side being different from the first side of the substrate body (B). The mirror (M) may be embodied, in particular, such that the substrate body (B) is produced from a glass ceramic material.

Abstract: A projection exposure tool for microlithography for imaging mask structures of an image-providing substrate onto a substrate to be structured includes a measuring apparatus configured to determine a relative position of measurement structures disposed on a surface of one of the substrates in relation to one another in at least one lateral direction with respect to the substrate surface and to thereby simultaneously measure a number of measurement structures disposed laterally offset in relation to one another.

Abstract: A method for aligning a mirror of a microlithographic projection exposure apparatus, according to one formulation, involves: recording a first partial interferogram between a wave reflected at a first mirror segment (101) and a reference wave reflected at a reference surface (110, 310, 510), recording a second partial interferogram between a wave reflected at a second mirror segment (102) and a reference wave reflected at the reference surface, determining a phase offset between the first partial interferogram and the second partial interferogram, and aligning the first mirror segment and the second mirror segment in relation to one another in accordance with the determined phase offset, so that the distance of the relevant mirror segments (101, 102) from a respective predetermined, hypothetical surface in the direction of the respective surface normal is less than ?/10 at each point on the mirror segments, where ? denotes the operating wavelength of the mirror.

Abstract: A projection exposure tool for microlithography for imaging mask structures of an image-providing substrate onto a substrate to be structured includes a measuring apparatus configured to determine a relative position of measurement structures disposed on a surface of one of the substrates in relation to one another in at least one lateral direction with respect to the substrate surface and to thereby simultaneously measure a number of measurement structures disposed laterally offset in relation to one another.

Abstract: One aspect of the present invention relates to a mask inspection system for inspecting lithography masks, including a placement table for placing a lithography mask to be inspected, a first optical unit with a first beam path for examining structures of the lithography mask, and a second optical unit with a second beam path for establishing a position of at least one edge of the lithography mask. Here, the second beam path of the second optical unit passes at least once through a plane defined by the placement table.

Abstract: A projection exposure tool for microlithography for imaging mask structures of an image-providing substrate onto a substrate to be structured includes a measuring apparatus configured to determine a relative position of measurement structures disposed on a surface of one of the substrates in relation to one another in at least one lateral direction with respect to the substrate surface and to thereby simultaneously measure a number of measurement structures disposed laterally offset in relation to one another.

Abstract: A diffractive optical element (50) with a substrate (52) and a diffractive structure pattern (54) arranged thereon. The diffractive structure pattern is configured to convert a plane or spherical input wave (42) radiated thereon into at least four separate output waves, wherein at least one of the output waves is a non-spherical wave (56), at least a further one of the output waves is a spherical wave (58; 70) and at least two further ones of the output waves respectively are a plane wave (60) or a spherical wave (72, 74).

Abstract: A microlithographic projection exposure apparatus includes a projection light source. The apparatus also includes a heating light source for generating heating light which is at least partly absorbed by an optical element. An illumination optical unit directs the heating light onto the optical element such that the heating light has a predefined intensity distribution on an optical surface of the optical element. The illumination optical unit includes a deflection element which is a diffractive optical element or a refractive freeform element. The deflection element simultaneously directs the heating light impinging thereon in different directions.

Abstract: A projection exposure tool for microlithography for imaging mask structures of an image-providing substrate onto a substrate to be structured includes a measuring apparatus configured to determine a relative position of measurement structures disposed on a surface of one of the substrates in relation to one another in at least one lateral direction with respect to the substrate surface and to thereby simultaneously measure a number of measurement structures disposed laterally offset in relation to one another.

Abstract: The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

Abstract: A projection exposure tool for microlithography for imaging mask structures of an image-providing substrate onto a substrate to be structured includes a measuring apparatus configured to determine a relative position of measurement structures disposed on a surface of one of the substrates in relation to one another in at least one lateral direction with respect to the substrate surface and to thereby simultaneously measure a number of measurement structures disposed laterally offset in relation to one another.

Abstract: A method for calibrating an apparatus for the position measurement of measurement structures on a lithography mask comprises the following steps: qualifying a calibration mask comprising diffractive structures arranged thereon by determining positions of the diffractive structures with respect to one another by means of interferometric measurement, determining positions of measurement structures arranged on the calibration mask with respect to one another by means of the apparatus, and calibrating the apparatus by means of the positions determined for the measurement structures and also the positions determined for the diffractive structures.

Abstract: A projection exposure tool for microlithography for imaging mask structures of an image-providing substrate onto a substrate to be structured includes a measuring apparatus configured to determine a relative position of measurement structures disposed on a surface of one of the substrates in relation to one another in at least one lateral direction with respect to the substrate surface and to thereby simultaneously measure a number of measurement structures disposed laterally offset in relation to one another.