Abstract: A semiconductor device is provided including a die having an electronic component integrated thereon. The component includes regions in the die, including a first region of a first charge type electrically connected to a first device terminal, a second region of a second charge type forming a first PN junction with the first region, a third region of the first charge type forming a second PN junction with the second region, the third region being spaced apart from the first region by the second region and being electrically connected to the second device terminal, a fourth region of the first charge type forming a third PN junction with the second region, the fourth region being spaced apart from the first region and third region by the second region. The device further includes an electronic unit electrically connected between the first device terminal, the second device terminal and the fourth region.

Abstract: A semiconductor device and method of manufacturing a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a semiconductor layer located on the substrate; at least one shallow trench and at least one deep trench. Each of the at least one shallow trench and the at least one deep trench extending from a first major surface of the semiconductor layer. Sidewall regions and base regions of the trenches comprise a doped trench region and the trenches are at least partially filled with a conductive material contacting the doped region. The shallow trenches terminate in the semiconductor layer and the deep trench terminates in the semiconductor substrate.

Abstract: A semiconductor device and a method of making the same. The device includes a semiconductor substrate provided in a chip-scale package (CSP). The device also includes a plurality of contacts provided on a major surface of the substrate. The device further includes an electrically floating metal layer forming an ohmic contact on a backside of the semiconductor substrate. The device is operable to conduct a current that passes through the substrate from a first of said plurality of contacts to a second of said plurality of contacts via the metal layer on the backside.

Abstract: A semiconductor device and a method of making the same. The device includes a substrate comprising a major surface and a backside. The device also includes a dielectric partition for electrically isolating a first part of the substrate from a second part of the substrate. The dielectric partition extends through the substrate from the major surface to the backside.

Abstract: A semiconductor device and method of manufacturing a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a semiconductor layer located on the substrate; at least one shallow trench and at least one deep trench. Each of the at least one shallow trench and the at least one deep trench extending from a first major surface of the semiconductor layer. Sidewall regions and base regions of the trenches comprise a doped trench region and the trenches are at least partially filled with a conductive material contacting the doped region. The shallow trenches terminate in the semiconductor layer and the deep trench terminates in the semiconductor substrate.

Abstract: A semiconductor device and a method of making the same. The device includes a substrate comprising a major surface and a backside. The device also includes a dielectric partition for electrically isolating a first part of the substrate from a second part of the substrate. The dielectric partition extends through the substrate from the major surface to the backside.

Abstract: A semiconductor device and a method of making the same. The device includes a substrate comprising a major surface and a backside. The device also includes a dielectric partition for electrically isolating a first part of the substrate from a second part of the substrate. The dielectric partition extends through the substrate from the major surface to the backside.

Abstract: A semiconductor device and a method of making the same. The device includes a semiconductor substrate provided in a chip-scale package (CSP). The device also includes a plurality of contacts provided on a major surface of the substrate. The device further includes an electrically floating metal layer forming an ohmic contact on a backside of the semiconductor substrate. The device is operable to conduct a current that passes through the substrate from a first of said plurality of contacts to a second of said plurality of contacts via the metal layer on the backside.

Abstract: A monolithically integrated punch-through diode with a Schottky-like behavior. This is achieved as a Schottky-metal area (16) is deposited onto at least part of the first p-doped well's (9) surface. The Schottky-metal area (16) and the p-doped well (9) form the metal-semiconductor-transition of a Schottky-diode. The overvoltage protection of the inventive PT-diode is improved as the forward characteristic has a voltage drop that is less than 0.5V.

Abstract: A monolithically integrated punch-through diode with a Schottky-like behavior. This is achieved as a Schottky-metal area (16) is deposited onto at least part of the first p-doped well's (9) surface. The Schottky-metal area (16) and the p-doped well (9) form the metal-semiconductor-transition of a Schottky-diode. The overvoltage protection of the inventive PT-diode is improved as the forward characteristic has a voltage drop that is less than 0.5V.