Abstract: Disclosed herein is a method for reducing the risk of a fall comprising the steps of: attaching to a stable fixture a generally-tubular handrail with a plurality of vertical sections interposed by a plurality of horizontal sections, wherein ones of said multiple horizontal sections are positioned at at least two different vertical heights. The method also comprises assessing desired or optimal grasp locations along said handrail. Anti slip devices are preferably attached to the handrail adjacent the grasp locations. Also disclosed is a fall-risk reduction device comprising a generally-tubular handrail with a plurality of vertical sections interposed by a plurality of horizontal sections. The fall-risk reduction device also includes a plurality of antislip rings adjustably attached around said handrail and having a diameter approximately ½ inches larger than the diameter of said handrail.

Abstract: Provided are a preconditioned resin and methods of preparation thereof as well as methods for purifying hydrogen peroxide solutions. The method includes preconditioning an anion exchange resin, wherein an anion exchange resin bed is provided and carbon dioxide gas is passed through the resin bed.

Abstract: Provided are a method and apparatus for continuously blending a chemical solution for use in semiconductor processing. The method involves the step of: mixing a first chemical stream with a second chemical stream in a controlled manner, to form a stream of a solution having a predetermined formulation. The apparatus allows one to practice the above method. The method and apparatus can accurately provide chemical solutions of desired concentration in a continuous manner. The invention has particular applicability in semiconductor device fabrication.

Abstract: A method of integrated resin preconditioning and hydrogen peroxide purification is provided. The method includes preconditioning a resin by washing the resin with deionized water to produce a washed resin, and contacting an effective amount of a preconditioning hydrogen peroxide solution with the washed resin to remove impurities from the washed resin, thereby producing a preconditioned resin.

Abstract: Provided is a method of preconditioning a resin useful for removal of organic impurities from a hydrogen peroxide solution. The method involves the steps of (a) rinsing the resin with deionized water; (b) contacting the resin with an acid solution; and (c) rinsing the acid treated resin with deionized water. Also provided is a resin preconditioned in accordance with the method, and a method of removing organic impurities from a hydrogen peroxide solution using the preconditioned resin. The invention has particular applicability to the removal of total organic carbon (TOC) impurities from a hydrogen peroxide solution which can be used in the manufacture of semiconductor devices.

Abstract: Provided are a preconditioned resin and methods of preparation thereof as well as methods for purifying hydrogen peroxide solutions. The method includes preconditioning an anion exchange resin, wherein an anion exchange resin bed is provided and carbon dioxide gas is passed through the resin bed.

Abstract: A method of integrated resin preconditioning and hydrogen peroxide purification is provided. The method includes preconditioning a resin by washing the resin with deionized water to produce a washed resin, and contacting an effective amount of a preconditioning hydrogen peroxide solution with the washed resin to remove impurities from the washed resin, thereby producing a preconditioned resin.

Abstract: Provided are cartridges, apparatuses and methods for purifying a liquid chemical. The cartridges include a conduit connected to receive a flow of a chemical to be purified. A packed section in the conduit comprises a purification material. The ratio of the length of the packed section to the inside diameter of the conduit is from about 8:1 to about 200:1. The flow of the chemical to be purified contacts the purification material, thereby producing a flow of a purified chemical. This invention has particular applicability to the semiconductor manufacturing industry.

Abstract: Provided are methods for making a slurry composition, suitable for use in a chemical-mechanical planarization process. Also provided are compositions made by such methods. The methods comprise combining: (a) abrasive particles; (b) a suspension medium; (c) a peroxygen compound; (d) an etching agent; and (e) an alkyl ammonium hydroxide. The methods and compositions of the present invention are particularly applicable to the semiconductor manufacturing industry.

Abstract: Provided is a novel method and system for preparing ultra-high-purity buffered-hydrofluoric acid or ammonium fluoride controlled concentration. The method comprises bubbling purified ammonia vapor into ultra-pure hydrofluoric acid. The inventive method and system can be used as an on-site subsystem in a semiconductor device fabrication facility for supplying the buffered-hydrofluoric acid and ammonium fluoride to points of use in the semiconductor device fabrication facility.

Abstract: Provided is a novel method and system for preparing ultra-high-purity buffered-hydrofluoric acid or ammonium fluoride controlled concentration. The method comprises bubbling purified ammonia vapor into ultra-pure hydrofluoric acid. The inventive method and system can be used as an on-site subsystem in a semiconductor device fabrication facility for supplying the buffered-hydrofluoric acid and ammonium fluoride to points of use in the semiconductor device fabrication facility.

Abstract: Provided are ionic purifiers and methods that are suitable for providing an ultra-high-purity chemical to a semiconductor manufacturing process. The ionic purifiers include a vapor inlet introducing a chemical vapor to be purified into a column. A high-purity water inlet continuously introduces high-purity water into the column. The high-purity water contacts the chemical vapor to be purified, thereby forming a purified chemical vapor and contaminated water. A vapor outlet removes the purified chemical vapor from the column. A liquid outlet removes the contaminated water from the column. The invention has particular applicability in the semiconductor manufacturing industry.

Abstract: Provided is a novel method and system for preparing ultra-high-purity buffered-hydrofluoric acid or ammonium fluoride controlled concentration The method comprises bubbling purified ammonia vapor into ultra-pure hydrofluoric acid. The inventive method and system can be used as an on-site subsystem in a semiconductor device fabrication facility for supplying the buffered-hydrofluoric acid and ammonium fluoride to points of use in the semiconductor device fabrication facility.

Abstract: Provided is a novel method and system for preparing ultra-high-purity buffered-hydrofluoric acid or ammonium fluoride controlled concentration. The method comprises bubbling purified ammonia vapor into ultra-pure hydrofluoric acid. The inventive method and system can be used as an on-site subsystem in a semiconductor device fabrication facility for supplying the buffered-hydrofluoric acid and ammonium fluoride to points of use in the semiconductor device fabrication facility.

Abstract: Provided is a novel on-site system and method for providing ultra-high-purity nitric acid to a point of use. The system includes a source of nitric acid at a concentration greater than 68 wt %; a reflux distillation column having an inlet in communication with the nitric acid source for introducing nitric acid into the column, a reboiler, and a condensate outlet to provide a flow of nitric acid condensate from the column; a reservoir in communication with the condensate outlet for receiving the flow of nitric acid condensate; and piping for delivering nitric acid from the reservoir to a point of use. The system and method can be used as an on-site subsystem, in a semiconductor device fabrication facility for supplying the nitric acid condensate to points of use in the semiconductor device fabrication facility.

Abstract: A system for purification and generation of hydrofluoric acid on-site at a semiconductor device fabrication facility. An evaporation stage (optionally with arsenic oxidation) is followed by a fractionating column to remove most other impurities, an Ionic Purifier column to suppress contaminants not removed by the fractionating column, and finally the HF Supplier (HFS).

Abstract: A system and method for mixing and/or diluting ultrapure fluids, such as liquid acids, for semiconductor processing. The system includes first and second chemical dispensers, the first and second chemical dispensers adapted to contain first and second fluids to be mixed, respectively; a process connection between the first and second chemical dispensers which allows the first and second fluids to flow therethrough and intermingle to form a mixed fluid, the process connection further allowing the mixed fluid to flow to a location needed by the operator; and an ultrasonic wave emitting device provided in a location sufficient to transmit an ultrasonic wave through the mixed fluid, the device including means to measure the velocity of the wave through the mixed fluid, and thus indirectly measure a ratio defined by a quantity of the first chemical to a quantity of the second chemical in the mixed fluid.

Abstract: Highly purified ammonia for use in processes for the production of high-precision electronic components is prepared on-site by drawing ammonia vapor from a liquid ammonia reservoir, passing the vapor through a filter capable of filtering out particles of less than 0.005 micron in size, and scrubbing the filtered vapor in a high-pH aqueous scrubber.

Abstract: Semiconductor wafers and other electronic parts which similarly require ultra-high purity manufacturing environments are treated with ultra-high purity liquid cleaning and etching agents prepared at the site of use from gaseous raw materials which have been purified to a level compatible with semiconductor manufacturing standards, combined when appropriate with ultra-pure water.