Abstract: Split ash processes are disclosed to suppress damage to low-dielectric-constant (low-K) layers during via formation. For one embodiment, ash processes used to remove an organic layer, such as an organic planarization layer (OPL), associated with via formation are split into multiple ash process steps that are separated by intervening process steps. A first ash process is performed to remove a portion of an organic layer after vias have been partially opened to a low-K layer. Subsequently, after the vias are fully opened through the low-K layer, an additional ash process is performed to remove the remaining organic material. Although some damage may still occur on via sidewalls due to this split ash processing, the damage is significantly reduced as compared to prior solutions, and device performance is improved. Target critical dimension (CD) for vias and effective dielectric constants for the low-K layer are achieved.

Abstract: A method of forming fully aligned vias in a semiconductor device, the method including recessing a first level interconnect line below a first interlevel dielectric (ILD), laterally etching the exposed upper portion of the first interlevel dielectric bounding the recess, depositing a dielectric cap layer and a second level interlevel dielectric on top of the first interlevel dielectric, and forming a via opening.

Abstract: Techniques to enable bottom barrier free interconnects without voids. In one aspect, a method of forming interconnects includes: forming metal lines embedded in a dielectric; depositing a sacrificial dielectric over the metal lines; patterning vias and trenches in the sacrificial dielectric down to the metal lines, with the trenches positioned over the vias; lining the vias and trenches with a barrier layer; depositing a conductor into the vias and trenches over the barrier layer to form the interconnects; forming a selective capping layer on the interconnects; removing the sacrificial dielectric in its entirety; and depositing an interlayer dielectric (ILD) to replace the sacrificial dielectric. An interconnect structure is also provided.

Abstract: A method of forming fully aligned vias in a semiconductor device, the method including forming a first level interconnect line embedded in a first interlevel dielectric (ILD), selectively depositing a dielectric on the first interlevel dielectric, laterally etching the selectively deposited dielectric, depositing a dielectric cap layer and a second level interlevel dielectric on top of the first interlevel dielectric, and forming a via opening.

Abstract: A method of forming a semiconductor device having a vertical metal line interconnect (via) fully aligned to a first direction of a first interconnect layer and a second direction of a second interconnect layer in a selective recess region by forming a plurality of metal lines in a first dielectric layer; and recessing in a recess region first portions of the plurality of metal lines such that top surfaces of the first portions of the plurality of metal lines are below a top surface of the first dielectric layer; wherein a non-recess region includes second portions of the plurality of metal lines that are outside the recess region.

Abstract: A collapsible container having a base, an upper frame, and a pair of opposed side walls pivotably connected to side edges of the upper frame. Each of the side walls including an upper panel hingeably connected to a lower panel. The lower panel is hingeably connected to the base. A pair of opposed end walls are pivotably connected to end edges of the upper frame. The end walls are pivotable between an upright position extending from the upper frame to the base between the side walls and a retracted position within the upper frame. A lid is pivotably secured to the upper frame. Other embodiments are also disclosed.

Abstract: A pallet includes a deck having an opening therethrough, such that product can be removed through the opening from a box loaded on the deck of a pallet. A plurality of columns support the deck. The box may be supported on the deck over the opening. The bottom wall of the box may be opened though the opening in the deck. The items can then be removed from the box through the opening through the deck without removing the box from the pallet. Optionally, fasteners may secure flaps of the box in corners of the deck of a pallet. According to another feature, a brace having an elongated body portion can be secured to an opening of the pallet, such that the elongated body portion abuts goods that are supported on the deck.

Abstract: A first pallet includes a deck and a peripheral wall extending downward from a periphery of the deck. A plurality of feet extend downward from the deck. Each of the feet includes a foot wall defining its periphery. An outer portion of each foot wall is coterminous with the peripheral wall of the deck. The deck includes an opening aligned with each of the plurality of feet. A second, wider pallet may be used with the first pallet. The second pallet may be stacked on the first pallet and vice versa. In the second pallet, the outer portion of the wall of each of the feet is spaced inward from the peripheral wall of the deck, such that the deck of the second pallet is wider than the deck of the first pallet, but the spacing and size of the feet of both decks are identical.

Abstract: A method is presented for forming interlayer connections in a semiconductor device. The method includes patterning an etch stack to provide for a plurality of interlayer connections, etching guide layers following the etch stack to a first capping layer to form a plurality of guide openings, concurrently exposing a first plurality of conductive lines and a second plurality of conductive lines to form a plurality of interlayer connection openings by etching through the plurality of guide openings to remove the first capping layer, an interlayer dielectric, and a second capping layer, and depositing a metal fill in the plurality of interlayer connection openings to form the plurality of interlayer connections.

Abstract: A method of forming a semiconductor device having a vertical metal line interconnect (via) fully aligned to a first direction of a first interconnect layer and a second direction of a second interconnect layer in a selective recess region by forming a plurality of metal lines in a first dielectric layer; and recessing in a recess region first portions of the plurality of metal lines such that top surfaces of the first portions of the plurality of metal lines are below a top surface of the first dielectric layer; wherein a non-recess region includes second portions of the plurality of metal lines that are outside the recess region.

Abstract: Method and apparatus for completing atomic instructions in a microprocessor may be provided by identifying from a program-ordered Instruction Completion Table (ICT) a last entry in a completion window of instructions for completion in a current clock cycle of a processor; in response to determining that the last entry includes an atomic instruction that straddles the completion window: excluding the last entry from completion during the current clock cycle; completing instructions in the completion window for the current clock cycle; and shifting the completion window to include the last entry and a next entry adjacent to the last entry in the ICT in a next clock cycle.

Abstract: Method and apparatus for a completion mechanism for a microprocessor are provided by identifying entries in a section of an Instruction Completion Table (ICT) that are marked as ready to complete via corresponding Ready to Complete (RTC) status bits; determining a tail pointer indicating a start of the entries in the ICT that are ready for completion; determining a head pointer that indicates an end of the entries in the ICT that are ready for completion; completing instructions included in the entries between the tail pointer and the head pointer; and updating the tail pointer to a value of the head pointer for a subsequent instruction completion round.

Abstract: Method and apparatus for a completion mechanism for a microprocessor are provided by marking entries in a section of an Instruction Completion Table (ICT) as ready to complete using corresponding Ready to Complete (RTC) status bits; determining a tail pointer indicating a start of the entries in the ICT that are ready for completion in a current clock cycle; performing a counting leading ones on an RTC vector that organizes the RTC status bits according to a program order for completing the entries to determine a count leading ones pointer that indicates an end of the entries in the ICT that are ready for completion in the current clock cycle; completing instructions included in the entries between the tail pointer and the count leading ones pointer in one clock cycle; and updating the tail pointer to a value of the count leading ones pointer for a subsequent clock cycle.

Abstract: Method and apparatus for stopping completions using stop codes in an instruction completion table are provided by during a first clock cycle, in response to determining that a given entry in an Instruction Completion Table (ICT) is finalized and is associated with a stop code, completing, according to a program order, instructions included in one or more finalized entries of the ICT located in the ICT before the given entry; during a second clock cycle, after completing the instructions, performing exception processing for a special instruction included in the given entry; and during a third clock cycle, after processing the special instruction, completing, according to the program order, additional instructions in one or more finalized entries located in the ICT after the given entry.

Abstract: A method for manufacturing a semiconductor device includes forming a first interconnect level having a conductive metal layer formed in a first dielectric layer. In the method, a cap layer is formed on the first interconnect level, and a second interconnect level including a second dielectric layer is formed on the cap layer. The method also includes forming a third interconnect level including a third dielectric layer on the second interconnect level. An opening is formed through the second and third interconnect levels and over the conductive metal layer. Sides of the opening are lined with a spacer material, and a portion of the cap layer at a bottom of the opening is removed from a top surface of the conductive metal layer. The spacer material is removed from the opening, and a conductive material layer is deposited in the opening on the conductive metal layer.

Abstract: In one embodiment, a method for hydrofluorocarbon gas-assisted plasma etch for interconnect fabrication includes providing a layer of a dielectric material and etching a trench in the layer of the dielectric material, by applying a mixture of an aggressive dielectric etch gas and a polymerizing etch gas to the layer of the dielectric material. In another embodiment, an integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the plurality of semiconductor devices. A pitch of the plurality of conductive lines is approximately twenty-eight nanometers.

Abstract: A method of forming a semiconductor device having a vertical metal line interconnect (via) fully aligned to a first direction of a first interconnect layer and a second direction of a second interconnect layer in a selective recess region by forming a plurality of metal lines in a first dielectric layer; and recessing in a recess region first portions of the plurality of metal lines such that top surfaces of the first portions of the plurality of metal lines are below a top surface of the first dielectric layer; wherein a non-recess region includes second portions of the plurality of metal lines that are outside the recess region.

Abstract: A method for manufacturing a semiconductor device includes forming a first interconnect level having a conductive metal layer formed in a first dielectric layer. In the method, a cap layer is formed on the first interconnect level, and a second interconnect level including a second dielectric layer is formed on the cap layer. The method also includes forming a third interconnect level including a third dielectric layer on the second interconnect level. An opening is formed through the second and third interconnect levels and over the conductive metal layer. Sides of the opening are lined with a spacer material, and a portion of the cap layer at a bottom of the opening is removed from a top surface of the conductive metal layer. The spacer material is removed from the opening, and a conductive material layer is deposited in the opening on the conductive metal layer.