Abstract: A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.

Abstract: A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip. The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.

Abstract: Various interposers and method of manufacturing related thereto are disclosed. In one aspect, a method of manufacturing is provided that includes coupling an identification structure to an interposer. The identification structure is operable to provide identification information about the interposer. The identification structure is programmable to create or alter the identification information.

Abstract: A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip. The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.

Abstract: A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip. The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.

Abstract: A method of manufacturing is provided that includes fabricating a first plurality of electrically functional interconnects on a front side of a first semiconductor chip and fabricating a first plurality of electrically non-functional interconnects on a back side of the first semiconductor chip. Additional chips may be stacked on the first semiconductor chip.

Abstract: Various interposers and method of manufacturing related thereto are disclosed. In one aspect, a method of manufacturing is provided that includes coupling an identification structure to an interposer. The identification structure is operable to provide identification information about the interposer. The identification structure is programmable to create or alter the identification information.

Abstract: A method of manufacturing is provided that includes fabricating a first plurality of electrically functional interconnects on a front side of a first semiconductor chip and fabricating a first plurality of electrically non-functional interconnects on a back side of the first semiconductor chip. Additional chips may be stacked on the first semiconductor chip.

Abstract: A method of manufacturing is provided that includes fabricating a first set of interconnect structures on a side of a first semiconductor substrate. The first semiconductor substrate is operable to have at least one of plural semiconductor substrates stacked on the side. The first set of interconnect structures is arranged in a pattern. Each of the plural semiconductor substrates has a second set of interconnect structures arranged in the pattern, one of the plural semiconductor substrates has a smallest footprint of the plural semiconductor substrates. The pattern has a footprint smaller than the smallest footprint of the plural semiconductor substrates.

Abstract: A method of manufacturing is provided that includes forming a first proximity interconnect on a first side of a first semiconductor chip and a first plurality of interconnect structures projecting from the first side. A second proximity interconnect is formed on a second side of a second semiconductor chip and a second plurality of interconnect structures are formed projecting from the second side. The second semiconductor chip is coupled to the first semiconductor chip so that the second side faces the first side and the first interconnect structures are coupled to the second interconnect structures. The first and second proximity interconnects cooperate to provide a proximity interface. The coupling of the first interconnect structures to the second interconnect structures provides desired vertical and lateral alignment of the first and second proximity interconnects.

Abstract: A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip. The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.