Abstract: Smooth silicon films having low compressive stress and smooth tensile silicon films are deposited by plasma enhanced chemical vapor deposition (PECVD) using a process gas comprising a silicon-containing precursor (e.g., silane), argon, and a second gas, such as helium, hydrogen, or a combination of helium and hydrogen. Doped smooth silicon films and smooth silicon germanium films can be obtained by adding a source of dopant or a germanium-containing precursor to the process gas. In some embodiments dual frequency plasma comprising high frequency (HF) and low frequency (LF) components is used during deposition, resulting in improved film roughness. The films are characterized by roughness (Ra) of less than about 7 ?, such as less than about 5 ? as measured by atomic force microscopy (AFM), and a compressive stress of less than about 500 MPa in absolute value. In some embodiments smooth tensile silicon films are obtained.

Abstract: Methods of forming a film stack may include the plasma accelerated deposition of a silicon nitride film formed from the reaction of nitrogen containing precursor with silicon containing precursor, the plasma accelerated substantial elimination of silicon containing precursor from the processing chamber, the plasma accelerated deposition of a silicon oxide film atop the silicon nitride film formed from the reaction of silicon containing precursor with oxidant, and the plasma accelerated substantial elimination of oxidant from the processing chamber. Process station apparatuses for forming a film stack of silicon nitride and silicon oxide films may include a processing chamber, one or more gas delivery lines, one or more RF generators, and a system controller having machine-readable media with instructions for operating the one or more gas delivery lines, and the one or more RF generators.

Abstract: Methods for depositing film stacks by plasma enhanced chemical vapor deposition are described. In one example, a method for depositing a film stack on a substrate, wherein the film stack includes films of different compositions and the deposition is performed in a process station in-situ, is provided. The method includes, in a first plasma-activated film deposition phase, depositing a first layer of film having a first film composition on the substrate; in a second plasma-activated deposition phase, depositing a second layer of film having a second film composition on the first layer of film; and sustaining the plasma while transitioning a composition of the plasma from the first plasma-activated film deposition phase to the second plasma-activated film deposition phase.

Abstract: Methods and hardware for depositing ultra-smooth silicon-containing films and film stacks are described. In one example, an embodiment of a method for forming a silicon-containing film on a substrate in a plasma-enhanced chemical vapor deposition apparatus is disclosed, the method including supplying a silicon-containing reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a co-reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a capacitively-coupled plasma to a process station of the plasma-enhanced chemical vapor deposition apparatus, the plasma including silicon radicals generated from the silicon-containing reactant and co-reactant radicals generated from the co-reactant; and depositing the silicon-containing film on the substrate, the silicon-containing film having a refractive index of between 1.4 and 2.1, the silicon-containing film further having an absolute roughness of less than or equal to 4.5 ? as measured on a silicon substrate.

Abstract: Smooth silicon films having low compressive stress and smooth tensile silicon films are deposited by plasma enhanced chemical vapor deposition (PECVD) using a process gas comprising a silicon-containing precursor (e.g., silane), argon, and a second gas, such as helium, hydrogen, or a combination of helium and hydrogen. Doped smooth silicon films and smooth silicon germanium films can be obtained by adding a source of dopant or a germanium-containing precursor to the process gas. In some embodiments dual frequency plasma comprising high frequency (HF) and low frequency (LF) components is used during deposition, resulting in improved film roughness. The films are characterized by roughness (Ra) of less than about 7 ?, such as less than about 5 ? as measured by atomic force microscopy (AFM), and a compressive stress of less than about 500 MPa in absolute value. In some embodiments smooth tensile silicon films are obtained.

Abstract: Disclosed herein are methods of forming a film stack which may include the plasma accelerated deposition of a silicon nitride film formed from the reaction of nitrogen containing precursor with silicon containing precursor, the plasma accelerated substantial elimination of silicon containing precursor from the processing chamber, the plasma accelerated deposition of a silicon oxide film atop the silicon nitride film formed from the reaction of silicon containing precursor with oxidant, and the plasma accelerated substantial elimination of oxidant from the processing chamber. Also disclosed herein are process station apparatuses for forming a film stack of silicon nitride and silicon oxide films which may include a processing chamber, one or more gas delivery lines, one or more RF generators, and a system controller having machine-readable media with instructions for operating the one or more gas delivery lines, and the one or more RF generators.

Abstract: Smooth silicon and silicon germanium films are deposited by plasma enhanced chemical vapor deposition (PECVD). The films are characterized by roughness (Ra) of less than about 4 ?. In some embodiments, smooth silicon films are undoped and doped polycrystalline silicon films. The dopants can include boron, phosphorus, and arsenic. In some embodiments the smooth polycrystalline silicon films are also highly conductive. For example, boron-doped polycrystalline silicon films having resistivity of less than about 0.015 Ohm cm and Ra of less than about 4 ? can be deposited by PECVD. In some embodiments smooth silicon films are incorporated into stacks of alternating layers of doped and undoped polysilicon, or into stacks of alternating layers of silicon oxide and doped polysilicon employed in memory devices. Smooth films can be deposited using a process gas having a low concentration of silicon-containing precursor and/or a process gas comprising a silicon-containing precursor and H2.

Abstract: Methods and hardware for depositing film stacks in a process tool in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a method for depositing, on a substrate, a film stack including films of different compositions in-situ in a process station using a plasma is described, the method including, in a first plasma-activated film deposition phase, depositing a first layer of film having a first film composition on the substrate; in a second plasma-activated deposition phase, depositing a second layer of film having a second film composition on the first layer of film; and sustaining the plasma while transitioning a composition of the plasma from the first plasma-activated film deposition phase to the second plasma-activated film deposition phase.

Abstract: Methods and hardware for depositing ultra-smooth silicon-containing films and film stacks are described. In one example, an embodiment of a method for forming a silicon-containing film on a substrate in a plasma-enhanced chemical vapor deposition apparatus is disclosed, the method including supplying a silicon-containing reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a co-reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a capacitively-coupled plasma to a process station of the plasma-enhanced chemical vapor deposition apparatus, the plasma including silicon radicals generated from the silicon-containing reactant and co-reactant radicals generated from the co-reactant; and depositing the silicon-containing film on the substrate, the silicon-containing film having a refractive index of between 1.4 and 2.1, the silicon-containing film further having an absolute roughness of less than or equal to 4.5 ? as measured on a silicon substrate.