Abstract: A method of plasma processing comprises generating electrons in a source chamber, generating an electric potential gradient between the source chamber and a processing chamber by applying a first negative direct current (DC) voltage to the source chamber and a ground voltage to the processing chamber, accelerating the electrons from the source chamber through a dielectric injector and into the processing chamber using the electric potential gradient, and generating an electron-beam sustained plasma (ESP) in the processing chamber using the electrons from the source chamber.

Abstract: A measurement system for a plasma processing system includes a detector and an ion current meter coupled to the ion current collector and configured to provide a signal based on the measurements from the ion current collector. The detector includes an insulating substrate including a cavity, an ion angle selection grid configured to be exposed to a bulk plasma disposed in an upper portion of the cavity, and an ion current collector disposed within the cavity at an opposite side of the cavity below the ion angle selection grid. The ion angle selection grid includes an ion angle selection substrate and a plurality of through openings extending through the ion angle selection substrate, where each of the plurality of through openings has a depth into the ion angle selection substrate and a width orthogonal to the depth, where a ratio of the depth to the width is greater than or equal to 40.

Abstract: An apparatus comprises an electron source chamber, an electron-beam sustained plasma (ESP) processing chamber, and a dielectric injector disposed between the electron source chamber and the ESP processing chamber. The dielectric injector comprises a first flared input region comprising a wide entry opening and a narrow exit opening. The wide entry opening opens into to the electron source chamber. The first flared input region is radially symmetric about a longitudinal axis of the dielectric injector. The dielectric injector further comprises a first parallel region comprising an input opening and an output opening. The input opening is adjacent to the narrow exit opening. The output opening is disposed opposite of the input opening. The first parallel region is cylindrical.

Abstract: A method of plasma processing comprises generating electrons in a source chamber, generating an electric potential gradient between the source chamber and a processing chamber by applying a first negative direct current (DC) voltage to the source chamber and a ground voltage to the processing chamber, accelerating the electrons from the source chamber through a dielectric injector and into the processing chamber using the electric potential gradient, and generating an electron-beam sustained plasma (ESP) in the processing chamber using the electrons from the source chamber.

Abstract: An apparatus comprises an electron source chamber, an electron-beam sustained plasma (ESP) processing chamber, and a dielectric injector disposed between the electron source chamber and the ESP processing chamber. The dielectric injector comprises a first flared input region comprising a wide entry opening and a narrow exit opening. The wide entry opening opens into to the electron source chamber. The first flared input region is radially symmetric about a longitudinal axis of the dielectric injector. The dielectric injector further comprises a first parallel region comprising an input opening and an output opening. The input opening is adjacent to the narrow exit opening. The output opening is disposed opposite of the input opening. The first parallel region is cylindrical.