Patents by Inventor Joel R. Whitaker

Joel R. Whitaker has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming patterned polyimide films
    Patent number: 5470693
    Abstract: A method of producing patterned polyimide films using wet development of polyimide precursors through a photoresist mask is disclosed. Low thermal coefficient of expansion (TCE) polyimide patterns are formed by starting with a polyamic acid precursor, typically, that derived from 3,3',4,4'-biphenyltetracarboxylic acid dianhydride-p-phenylenediamine (BPDA-PDA). Polyimide patterns are generated with complete retention of the intrinsic properties of the polyimide backbone chemistry and formation of metallurgical patterns in low TCE polyimide dielectric.
    Type: Grant
    Filed: February 18, 1992
    Date of Patent: November 28, 1995
    Assignee: International Business Machines Corporation
    Inventors: Krishna G. Sachdev, Joel R. Whitaker, Umar M. Ahmad
  • Silicon-containing positive resist and use in multilayer metal structures
    Patent number: 5422223
    Abstract: Photosensitive silicon-containing resist compositions comprising hydroxyphenylsilsesquioxanes and siloxanes partially estersified with diazonaphthoquinone sulfonyloxy groups for imageable O.sub.2 RIE barrier films. Methods for forming image patterns on substrates using these photosensitive silicon-containing resist compositions are also provided.
    Type: Grant
    Filed: July 13, 1994
    Date of Patent: June 6, 1995
    Assignee: International Business Machines Corporation
    Inventors: Krishna G. Sachdev, Harbans S. Sachdev, Joel R. Whitaker
  • Method of forming sub-half micron patterns with optical lithography using bilayer resist compositions comprising a photosensitive polysilsesquioxane
    Patent number: 5399462
    Abstract: A method is provided for forming a microlithographic relief image having a width of less than one half micron in a bilayer resist composition. The resist composition comprises a single component, silicon-containing photoimageable layer and a polymeric underlayer having a high optical density and a refractive index similar to the refractive index of the overlaying resist. The method provides for the formation of a relief image in the top layer using an i-line (365 nm) or deep ultra violet (170 to 300 nm) light source, followed by O.sub.2 RIE transfer of the relief image into the polymeric underlayer.
    Type: Grant
    Filed: July 13, 1994
    Date of Patent: March 21, 1995
    Assignee: International Business Machines Corporation
    Inventors: Krishna G. Sachdev, Premlatha Jagannathan, Robert N. Lang, Harbans S. Sachdev, Ratnam Sooriyakumaran, Joel R. Whitaker
  • Method of forming patterned polyimide films
    Patent number: 5374503
    Abstract: A method of producing patterned polyimide films using wet development of polyimide precursors through a photoresist mask is disclosed. Low thermal coefficient of expansion (TCE) polyimide patterns are formed by starting with a polyamic acid precursor, typically, that derived from 3,3',4,4'-biphenyltetracarboxylic acid dianhydride-p-phenylenediamine (BPDA-PDA). Polyimide patterns are generated with complete retention of the intrinsic properties of the polyimide backbone chemistry and formation of metallurgical patterns in low TCE polyimide dielectric.
    Type: Grant
    Filed: April 13, 1993
    Date of Patent: December 20, 1994
    Assignee: International Business Machines Corporation
    Inventors: Krishna G. Sachdev, Joel R. Whitaker, Umar M. Ahmad