Abstract: A layer stack is formed that includes a device layer and an insulator layer. The device layer includes electronic elements. The insulator layer is adjacent to a back surface of the device layer. A spacer disk is adhesive bonded on the layer stack on a side opposite the device layer. The spacer disk and the layer stack form a wafer composite. The wafer composite is divided into a plurality of individual semiconductor chips. Each semiconductor chip includes a portion of the layer stack and a portion of the spacer disk.

Abstract: An apparatus is provided that includes a substrate. In addition, the apparatus includes a first electrically conductive path arranged in a second layer above the substrate and forming a first connection of the apparatus, and a second electrically conductive pad arranged in the second layer and forming a second connection of the apparatus. An electrically conductive element is arranged in a first layer spaced apart from the second layer. The electrically conductive element forms a first capacitor with either the first pad or the second pad. In addition, a first coil is arranged in the first layer, the second layer, or in both layers. A first end of the first coil is connected to the second pad.

Abstract: A semiconductor device includes a structured interlayer on a substrate, a structured power metallization on the structured interlayer, and a barrier on the structured power metallization. The barrier is configured to prevent diffusion of at least one of water, water ions, sodium ions, potassium ions, chloride ions, fluoride ions, and sulphur ions towards the structured power metallization. A first defined edge of the structured interlayer faces the same direction as a first defined edge of the structured power metallization and extends beyond the first defined edge of the structured power metallization by at least 0.5 microns. The structured interlayer has a compressive residual stress at room temperature and the structured power metallization generates a tensile stress at room temperature that is at least partly counteracted by the compressive residual stress of the structured interlayer. The first defined edge of the structured power metallization has a sidewall which slopes inward.

Abstract: A method includes producing a semiconductor arrangement having a semiconductor layer, a first insulation layer arranged on the semiconductor layer and facing a first surface of the semiconductor arrangement, and an insulating via extending in a vertical direction through the semiconductor layer as far as the first insulation layer, the insulating via surrounding a region of the semiconductor layer in a ring-shaped fashion. The method further includes permanently securing a first carrier to the first surface of the semiconductor arrangement.

Abstract: A method for shifting an automatic transmission, including a drive region, a hydrodynamic converter, an output region, and exactly one planetary gear that acts in a first operating state and a second operating state. In order to shift to different gears of the automatic transmission, different transmission ratios are set in the strictly mechanical power branch by disengaging and engaging clutches and/or brakes in the drive region. The planetary gear set in the output region in the case of at least two different transmission ratios in the strictly mechanical power branch, the rotational movement transmitted by the strictly mechanical power branch is stepped up, in order to always set additional gears.

Abstract: A semiconductor device includes a structured interlayer on a substrate, a structured power metallization on the structured interlayer, and a barrier on the structured power metallization. The barrier is configured to prevent diffusion of at least one of water, water ions, sodium ions, potassium ions, chloride ions, fluoride ions, and sulphur ions towards the structured power metallization. A first defined edge of the structured interlayer faces the same direction as a first defined edge of the structured power metallization and extends beyond the first defined edge of the structured power metallization by at least 0.5 microns. The structured interlayer has a compressive residual stress at room temperature and the structured power metallization generates a tensile stress at room temperature that is at least partly counteracted by the compressive residual stress of the structured interlayer. The first defined edge of the structured power metallization has a sidewall which slopes inward.

Abstract: A method includes producing a semiconductor arrangement having a semiconductor layer, a first insulation layer arranged on the semiconductor layer and facing a first surface of the semiconductor arrangement, and an insulating via extending in a vertical direction through the semiconductor layer as far as the first insulation layer, the insulating via surrounding a region of the semiconductor layer in a ring-shaped fashion. The method further includes permanently securing a first carrier to the first surface of the semiconductor arrangement.

Abstract: A method for shifting an automatic transmission, including a drive region, a hydrodynamic converter, an output region, and exactly one planetary gear that acts in a first operating state and a second operating state. In order to shift to different gears of the automatic transmission, different transmission ratios are set in the strictly mechanical power branch by disengaging and engaging clutches and/or brakes in the drive region. The planetary gear set in the output region in the case of at least two different transmission ratios in the strictly mechanical power branch, the rotational movement transmitted by the strictly mechanical power branch is stepped up, in order to always set additional gears.

Abstract: A method for manufacturing a metal pad structure of a die is provided, the method including: forming a metal pad between encapsulation material of the die, wherein the metal pad and the encapsulation material are separated from each other by a gap; and forming additional material in the gap to narrow at least a part of the gap.

Abstract: A method for manufacturing a metal pad structure of a die is provided, the method including: forming a metal pad between encapsulation material of the die, wherein the metal pad and the encapsulation material are separated from each other by a gap; and forming additional material in the gap to narrow at least a part of the gap.

Abstract: A drive device for a vehicle having an automatic transmission, which has a hydrodynamic torque converter. The transmission oil of the automatic transmission is used as the operating medium for the hydrodynamic torque converter. In addition, the drive device has a heat exchanger for cooling the operating medium. It is provided that additional apparatuses (heat exchangers) are provided for the direct cooling of the hydrodynamic torque converter using a cooling medium.

Abstract: The invention relates to a transmission with a transmission housing and at least one hydrodynamic component, of which at least one region is arranged in an integral manner with the transmission housing of the hydrodynamic component. The transmission housing is arranged in a substantially tubular way with an opening at each end. The region of the hydrodynamic component which is arranged integrally with the transmission housing is arranged as a functional element of the hydrodynamic component and arranged between the openings. The inner cross section of the transmission housing is arranged to be constant or expanding from the functional element to the respective opening. The transmission housing can thus be demolded in a simple manner and can be cast without any lost cores in permanent molds.

Abstract: A power semiconductor IC device is disclosed. In one embodiment, the device includes a substrate, and a layer structure formed on the substrate. The layer structure includes a metallization layer including copper, wherein the metallization layer is formed as a stack structure including at least two copper layers and a stabilization layer between the two copper layers.

Abstract: A transmission/heat exchanger unit includes a transmission having an input and at least one output and a heat exchanger, which is assigned to the output side of the transmission and is connected to said transmission at least indirectly via connecting lines. A duct or ducts route fuel, and is/are integrated in the case of the transmission, and extend(s) at least over part of the axial extent of the case to an end face of the transmission on the output side. A retaining device is provided for fastening the heat exchanger to the end face of the case of the transmission on the output side. The connecting lines that couple the fuel-routing duct or ducts in the transmission with the heat exchanger are integrated in the retaining device. Complementary connections of a standard type and size, which are located on the retaining device and the transmission case, are provided for fuel routing and for fastening the retaining device.

Abstract: A power semiconductor IC device is disclosed. In one embodiment, the device includes a substrate, and a layer structure formed on the substrate. The layer structure includes a metallization layer including copper, wherein the metallization layer is formed as a stack structure including at least two copper layers and a stabilization layer between the two copper layers.

Abstract: Semiconductor components having a semiconductor body which includes a semiconductor base surface have to be sealed with a molding compound in order to protect against moisture or heat. Mechanical interlocking of the molding compound to the semiconductor base surface is achieved by means of at least one interlocking structure. This may be either a horizontal interlocking structure for mechanically interlocking the molding compound to the semiconductor base surface in the direction which is horizontal with respect to the semiconductor base surface and/or a vertical interlocking structure for mechanically interlocking the molding compound to the semiconductor base surface in the direction which is vertical with respect to the semiconductor base surface.

Abstract: Semiconductor components having a semiconductor body which includes a semiconductor base surface have to be sealed with a molding compound in order to protect against moisture or heat. Mechanical interlocking of the molding compound to the semiconductor base surface is achieved by means of at least one interlocking structure. This may be either a horizontal interlocking structure for mechanically interlocking the molding compound to the semiconductor base surface in the direction which is horizontal with respect to the semiconductor base surface and/or a vertical interlocking structure for mechanically interlocking the molding compound to the semiconductor base surface in the direction which is vertical with respect to the semiconductor base surface.