Abstract: A sensor system with a lighting device and a detector device is specified. The lighting device is provided for emitting laser radiation of a first wavelength and laser radiation of a second wavelength different from the first. The detector device is provided for detecting electromagnetic radiation of the first and the second wavelength.

Abstract: A sensor system with a lighting device and a detector device is specified. The lighting device is provided for emitting laser radiation of a first wavelength and laser radiation of a second wavelength different from the first. The detector device is provided for detecting electromagnetic radiation of the first and the second wavelength.

Abstract: A method and a device for generating images in a motor vehicle. An infrared-sensitive camera generates images of the surroundings of the motor vehicle, line by line in scanning lines. The image recording region of the infrared-sensitive camera is illuminated in pulsed fashion by at least one emission source that radiates in the infrared spectral region. The recording of the scanning lines is carried out synchronized in time with the pulsed illumination. In a first example embodiment, the recording of scanning lines of an infrared-sensitive CMOS camera is synchronized in time with a laser diode emitting in the near infrared spectral region. In a second example embodiment, the synchronization in time of the recording of scanning lines of the infrared-sensitive CMOS camera with the pulsed illumination is performed autonomously by the CMOS camera by evaluation of at least one recorded scanning line.

Abstract: A semiconductor laser has a semiconductor body with first and second main areas, preferably each provided with a contact area, and also first and second mirror areas. An active layer and a current-carrying layer are formed between the main areas. The current-carrying layer has at least one strip-type resistance region, which runs transversely with respect to the resonator axis and whose sheet resistivity is increased at least in partial regions compared with the regions of the current-carrying layer that adjoin the resistance region.