Patents by Inventor Joerg Kandler

Joerg Kandler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090297430
    Abstract: The high-purity alkaline earth halide crystals, especially CaF2, BaF2 or MgF2 crystals, have a diffuse scatter distribution function value of less than 7×10?7, an RMS uniformity of refractive index of less than 15×10?8 after subtraction of Zernike coefficients and an RMS value of birefringence in the (111) direction of less than 0.2 nm/cm. Preferably the crystals exhibit a loss coefficient of less than 5×10?4 cm?1 after irradiation with 10×109 laser pulses with an energy density of 10 mJ/cm2 at a wavelength of 193 nm. Also they have RMS birefringence in the (100) direction or the (111) direction that is less than 0.35 nm/cm.
    Type: Application
    Filed: August 12, 2009
    Publication date: December 3, 2009
    Inventors: Andreas Weisleder, Matthias Mueller, Joerg Kandler, Andreas Menzel, Rainer Guett
  • Patent number: 7588637
    Abstract: A method for producing high-purity, large-volume monocrystals that are especially radiation-resistant and have low intrinsic birefringence. From a melt of crystalline raw material, with controlled cooling and solidification, a crystal is generated. As the crystalline raw material, shards and/or waste from already-grown crystals is used, and the re-used raw material 1) upon visual observation in daylight has no color; and 2) upon illumination with a white-light lamp in a darkroom a) has no or at maximum a just barely perceivable reddish and/or bluish fluorescence; and b) has no or at maximum a just barely perceivable diffuse scattering; and c) has no or only slight discrete scattering of at maximum two visually perceivable scattering centers per dm3. In this way, crystals can be obtained which after tempering have a BSDF value of <7×10?7, an RMS homogeneity after the subtraction of 36 Zernike coefficients of <15×10?8, an SDR-RMS value in the 111 direction of <0.2 nm/cm.
    Type: Grant
    Filed: December 12, 2006
    Date of Patent: September 15, 2009
    Assignee: Schott AG
    Inventors: Andreas Weisleder, Matthias Mueller, Joerg Kandler, Andreas Menzel, Rainer Guett
  • Patent number: 7534412
    Abstract: Single crystals with low scattering, small refractive index differences and few small angle grain boundaries have a bi-directional scattering distribution function value (BSDF) of less than 1.5*10?6 or 5*10?7.
    Type: Grant
    Filed: May 8, 2008
    Date of Patent: May 19, 2009
    Assignee: Schott AG
    Inventors: Lars Ortmann, Joerg Kandler, Andreas Menzel, Matthias Mueller, Lutz Parthier, Gordon Von Der Goenna
  • Publication number: 20080292535
    Abstract: The method provides CaF2 single crystals with low scattering, small refractive index differences and few small angle grain boundaries, which can be tempered at elevated temperatures. In the method a CaF2 starting material is heat-treated for at least five hours at temperatures between 1000° C. and 1250° C. and then vaporized at a temperature of at least 1100° C. in a vacuum of at most 5*10?4 mbar to form a vapor. The vapor is condensed at a temperature between 500° C. to 1280° C. to form a condensate. Then a melt formed from the condensate is cooled in a controlled manner to obtain the single crystal, which is subsequently tempered. The method is preferably performed with a CaF2 starting material including waste material and cuttings from previously used melts.
    Type: Application
    Filed: May 8, 2008
    Publication date: November 27, 2008
    Inventors: Lars Ortmann, Joerg Kandler, Andreas Menzel, Matthias Mueller, Lutz Parthier, Gordon Von Der Goenna
  • Patent number: 7393409
    Abstract: The method provides CaF2 single crystals with low scattering, small refractive index differences and few small angle grain boundaries, which can be tempered at elevated temperatures. In the method a CaF2 starting material is heat-treated for at least five hours at temperatures between 1000° C. and 1250° C. and then sublimed at a sublimation temperature of at least 1100° C. in a vacuum of at most 5*10?4 mbar to form a vapor. The vapor is condensed at a condensation temperature of at least 500° C., which is at least 20° C. below the sublimitation temperature, to form a condensate. Then a melt formed from the condensate is cooled in a controlled manner to obtain the single crystal, which is subsequently tempered. The method is preferably performed with a CaF2 starting material including waste material and cuttings from previously used melts.
    Type: Grant
    Filed: February 22, 2005
    Date of Patent: July 1, 2008
    Assignee: Schott AG
    Inventors: Lars Ortmann, Joerg Kandler, Andreas Menzel, Matthias Mueller, Lutz Parthier, Gordon Von der Goenna
  • Patent number: 7344595
    Abstract: The method for producing single crystals includes drying crystal raw material by removing water, reaction of impurities with a scavenger, preferably a metal halide, and homogenizing the melt. The method is performed with the raw material in a melt vessel with a variable-sized through-going opening, in which drying occurs at 100° C. to 600° C. for at least 20 hours with a geometric conductance value for the through-going opening of 2.00 to 30.00 mm2; the reacting occurs at 600° C. to 1200° C. for at least nine hours with a geometric conductance value of 0.0020 to 0.300 mm2 and the homogenizing occurs at above 1400° C. for at least six hours with a geometric conductance value of 0.25 to 1.1 mm2. Alternatively the geometric conductance value is the same during drying, reacting and homogenizing and takes a value between 0.25 and 1 mm2.
    Type: Grant
    Filed: January 24, 2005
    Date of Patent: March 18, 2008
    Assignee: Schott AG
    Inventors: Joerg Kandler, Lutz Parthier, Thomas Kaufhold, Gunther Wehrhan, Clemens Kunisch
  • Publication number: 20070186844
    Abstract: A method for producing high-purity, large-volume monocrystals that are especially radiation-resistant and have low intrinsic birefringence. From a melt of crystalline raw material, with controlled cooling and solidification, a crystal is generated. As the crystalline raw material, shards and/or waste from already-grown crystals is used, and the re-used raw material 1) upon visual observation in daylight has no color; and 2) upon illumination with a white-light lamp in a darkroom a) has no or at maximum a just barely perceivable reddish and/or bluish fluorescence; and b) has no or at maximum a just barely perceivable diffuse scattering; and c) has no or only slight discrete scattering of at maximum two visually perceivable scattering centers per dm3. In this way, crystals can be obtained which after tempering have a BSDF value of <7×10?7, an RMS homogeneity after the subtraction of 36 Zernike coefficients of <15×10?8, an SDR-RMS value in the 111 direction of <0.2 nm/cm.
    Type: Application
    Filed: December 12, 2006
    Publication date: August 16, 2007
    Inventors: Andreas Weisleder, Matthias Mueller, Joerg Kandler, Andreas Menzel, Rainer Guett
  • Publication number: 20050211160
    Abstract: The method provides CaF2 single crystals with low scattering, small refractive index differences and few small angle grain boundaries, which can be tempered at elevated temperatures. In the method a CaF2 starting material is heat-treated for at least five hours at temperatures between 1000° C. and 1250° C. and then vaporized at a temperature of at least 1100° C. in a vacuum of at most 5*10?4 mbar to form a vapor. The vapor is condensed at a temperature between 500° C. to 1280° C. to form a condensate. Then a melt formed from the condensate is cooled in a controlled manner to obtain the single crystal, which is subsequently tempered. The method is preferably performed with a CaF2 starting material including waste material and cuttings from previously used melts.
    Type: Application
    Filed: February 22, 2005
    Publication date: September 29, 2005
    Inventors: Lars Ortmann, Joerg Kandler, Andreas Menzel, Matthias Mueller, Lutz Parthier, Gordon Goenna
  • Publication number: 20050178316
    Abstract: The method for producing single crystals includes drying crystal raw material by removing water, reaction of impurities with a scavenger, preferably a metal halide, and homogenizing the melt. The method is performed with the raw material in a melt vessel with a variable-sized through-going opening, in which drying occurs at 100° C. to 600° C. for at least 20 hours with a geometric conductance value for the through-going opening of 2.00 to 30.00 mm2; the reacting occurs at 600° C. to 1200° C. for at least nine hours with a geometric conductance value of 0.0020 to 0.300 mm2 and the homogenizing occurs at above 1400° C. for at least six hours with a geometric conductance value of 0.25 to 1.1 mm2. Alternatively the geometric conductance value is the same during drying, reacting and homogenizing and takes a value between 0.25 and 1 mm2.
    Type: Application
    Filed: January 24, 2005
    Publication date: August 18, 2005
    Inventors: Joerg Kandler, Lutz Parthier, Thomas Kaufhold, Gunther Wehrhan, Clemens Kunisch
  • Patent number: 6740159
    Abstract: A method of making a fracture-resistant large-size calcium fluoride single crystal is described, which is suitable for an optical component for radiation in the far UV range. The calcium fluoride raw material for the single crystal is first melted and subsequently solidified by cooling the melt to form a single crystal. However the calcium fluoride raw material is doped with from 1 to 250, preferably 1 to 100, ppm of strontium, preferably added as strontium fluoride, and contains from 1 to 10 ppm of sodium as well as up to 100 ppm of other impurities.
    Type: Grant
    Filed: August 28, 2002
    Date of Patent: May 25, 2004
    Assignees: Schott Glas, Carl Zeiss SMT AG
    Inventors: Joerg Kandler, Ewald Moersen, Burkhard Speit, Harry Bauer, Thure Boehm, Eric Eva, Michael Thier, Hexin Wang, Frank Richter, Hans-Josef Paus
  • Patent number: 6603547
    Abstract: The method for determining radiation stability of a crystal to radiation of a working wavelength to be employed in a subsequent application includes taking a first absorption spectrum (A) of a cleaved piece of the crystal with a given thickness (D) over a predetermined wavelength range from a first wavelength (&lgr;1) to a second wavelength (&lgr;2) by means of a spectrophotometer. Then the cleaved piece of the crystal is irradiated with an energetic radiation source so as to form all theoretically possible color centers (saturation). After the irradiating a second absorption spectrum (B) of the cleaved piece of crystal is taken over the same predetermined wavelength range. Then a surface integral of a difference spectrum of the first absorption spectrum and the second absorption spectrum over the predetermined wavelength range is formed and divided by the thickness (D) to obtain a scaled surface integral value.
    Type: Grant
    Filed: October 11, 2001
    Date of Patent: August 5, 2003
    Assignee: Schott Glas
    Inventors: Ewald Moersen, Burkhard Speit, Lorenz Strenge, Joerg Kandler
  • Publication number: 20030101923
    Abstract: A method of making a fracture-resistant large-size calcium fluoride single crystal is described, which is suitable for an optical component for radiation in the far UV range. The calcium fluoride raw material for the single crystal is first melted and subsequently solidified by cooling the melt to form a single crystal. However the calcium fluoride raw material is doped with from 1 to 250, preferably 1 to 100, ppm of strontium, preferably added as strontium fluoride, and contains from 1 to 10 ppm of sodium as well as up to 100 ppm of other impurities.
    Type: Application
    Filed: August 28, 2002
    Publication date: June 5, 2003
    Inventors: Joerg Kandler, Ewald Moersen, Burkhard Speit, Harry Bauer, Thure Boehm, Eric Eva, Michael Thier, Hexin Wang, Frank Richter, Hans-Josef Paus
  • Publication number: 20020105643
    Abstract: The method for determining radiation stability of a crystal to radiation of a working wavelength to be employed in a subsequent application includes taking a first absorption spectrum (A) of a cleaved piece of the crystal with a given thickness (D) over a predetermined wavelength range from a first wavelength (&lgr;1) to a second wavelength (&lgr;2) by means of a spectrophotometer. Then the cleaved piece of the crystal is irradiated with an energetic radiation source so as to form all theoretically possible color centers (saturation). After the irradiating a second absorption spectrum (B) of the cleaved piece of crystal is taken over the same predetermined wavelength range. Then a surface integral of a difference spectrum of the first absorption spectrum and the second absorption spectrum over the predetermined wavelength range is formed and divided by the thickness (D) to obtain a scaled surface integral value.
    Type: Application
    Filed: October 11, 2001
    Publication date: August 8, 2002
    Inventors: Ewald Moersen, Burkhard Speit, Lorenz Strenge, Joerg Kandler