Abstract: A Lorentz Magnetoresistive sensor having an extremely small lead width and lead spacing is disclosed. The sensor can be constructed by a novel fabrication method that allows the leads to be deposited in such a manner that lead width and spacing between the leads is determined by the as deposited thicknesses of the lead layers and electrically insulating spacer layers between the leads rather than by photolithography. Because the lead thicknesses and lead spacings are not defined photolithograhically, the lead thickness and lead spacing are not limited by photolithographic resolution limits.

Abstract: A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.

Abstract: A magnetic memory device based on easy domain wall propagation and the extraordinary Hall effect includes a perpendicular-to-plane a magnetic electrically conductive element (2) that includes a memory node (3). Electrical conductors (12-15) surround the node (3) so that when energised, a magnetic field is produced to change the magnetization state of the node (3). In memory state “0” a magnetic domain is pinned within tapered portion (5) of the element (2). When a magnetic field is applied to the device, the domain (D) becomes unpinned and extends into the node (3) to produce a “1” state. The state of magnetization is sensed by means of a Hall contact (11). The current pulse (Jc) is applied through the element (2) so that the Hall voltage can be detected.

Abstract: A magnetic memory device based on easy domain wall propagation and the extraordinary Hall effect includes a perpendicular-to-plane a magnetic electrically conductive element (2) that includes a memory node (3). Electrical conductors (12-15) surround the node (3) so that when energised, a magnetic field is produced to change the magnetisation state of the node (3). In memory state “0” a magnetic domain is pinned within tapered portion (5) of the element (2). When a magnetic field is applied to the device, the domain (D) becomes unpinned and extends into the node (3) to produce a “1” state. The state of magnetisation is sensed by means of a Hall contact (11). The current pulse (Jc) is applied through the element (2) so that the Hall voltage can be detected.

Abstract: An image display system a projector for emitting projection light for generating an image on a light-backscattering projection surface. The wavelengths of the projection light lie in one or more discrete wavelength regions in the visible spectrum and the projection surface is covered on the projector side by an optical filter which passes only light with wavelengths corresponding to those of the projection light.

Abstract: In a device with a laser for image presentation in which the laser emits laser light of a defined coherence length L at a given wavelength .lambda. and in which there is arranged in the path of the laser light a first structure with which phase displacements can be carried out for individual photons of the laser light in accordance with a predetermined distribution, it is provided that the average path given by the ratio of the average root mean square of the phase displacement formed by the distribution and the magnitude of the wave vector k=2.pi./.lambda. of the laser is greater than the coherence length L multiplied by a factor of 1/(12).sup.1/2.