Abstract: A method for correcting a plurality of violations in a circuit design and new cells used in the method are disclosed. The method generally includes the steps of (A) implementing a first engineering change order in the circuit design to correct a first of the violations, (B) implementing a second engineering change order with a special cell to correct a second of the violations, the special cell having a plurality of interfaces available for a signal path associated with the second violation, each of the interfaces having a characteristic appropriate to correct the second violation, each of the characteristics having a different performance and (C) routing the signal path to one of the interfaces to fix the second violation.

Abstract: A method for correcting a plurality of violations in a circuit design and new cells used in the method are disclosed. The method generally includes the steps of (A) implementing a first engineering change order in the circuit design to correct a first of the violations, (B) implementing a second engineering change order with a special cell to correct a second of the violations, the special cell having a plurality of interfaces available for a signal path associated with the second violation, each of the interfaces having a characteristic appropriate to correct the second violation, each of the characteristics having a different performance and (C) routing the signal path to one of the interfaces to fix the second violation.

Abstract: A method for correcting a plurality of violations in a circuit design and new cells used in the method are disclosed. The method generally includes the steps of (A) implementing a first engineering change order in the circuit design to correct a first of the violations, (B) implementing a second engineering change order with a special cell to correct a second of the violations, the special cell having a plurality of interfaces available for a signal path associated with the second violation, each of the interfaces having a characteristic appropriate to correct the second violation, each of the characteristics having a different performance and (C) routing the signal path to one of the interfaces to fix the second violation.

Abstract: An apparatus comprising a plurality of input cells, two or more local tie up cells, and two or more local tie down cells. The plurality of input cells may be configured to provide (i) one or more gate voltage signals and (ii) one or more supply voltage signals. The two or more local tie up cells may be configured to provide electrostatic discharge (ESD) protection to one or more first standard cells. Each of the local tie up cells may be coupled to (i) the one or more first standard cells and (ii) each of the gate voltage signals. The two or more local tie down cells may be configured to provide ESD protection to one or more second standard cells. Each of the local tie down cells may be coupled to (i) the one or more second standard cells and (ii) each of the supply voltage signals.

Abstract: An on-chip substrate voltage controller which includes a plurality of chains of interconnected loaded ring oscillators connected to a multiplexer, where the multiplexer is configured to average the outputs from all the chains of interconnected loaded ring oscillators. An output of the multiplexer is connected to a comparator, such as a phase detector. The comparator also receives an output from a PLL, and is configured to compare the output of the multiplexer to the output of the PLL. An output of the comparator is connected to the controllable voltage regulator. The controllable voltage regulator receives a voltage in as well as the output of the comparator, and applies a substrate bias depending on what is received from the comparator.

Abstract: An apparatus comprising a plurality of input cells, two or more local tie up cells, and two or more local tie down cells. The plurality of input cells may be configured to provide (i) one or more gate voltage signals and (ii) one or more supply voltage signals. The two or more local tie up cells may be configured to provide electrostatic discharge (ESD) protection to one or more first standard cells. Each of the local tie up cells may be coupled to (i) the one or more first standard cells and (ii) each of the gate voltage signals. The two or more local tie down cells may be configured to provide ESD protection to one or more second standard cells. Each of the local tie down cells may be coupled to (i) the one or more second standard cells and (ii) each of the supply voltage signals.

Abstract: An on-chip substrate voltage controller which includes a plurality of chains of interconnected loaded ring oscillators connected to a multiplexer, where the multiplexer is configured to average the outputs from all the chains of interconnected loaded ring oscillators. An output of the multiplexer is connected to a comparator, such as a phase detector. The comparator also receives an output from a PLL, and is configured to compare the output of the multiplexer to the output of the PLL. An output of the comparator is connected to the controllable voltage regulator. The controllable voltage regulator receives a voltage in as well as the output of the comparator, and applies a substrate bias depending on what is received from the comparator.

Abstract: A method for correcting a plurality of violations in a circuit design and new cells used in the method are disclosed. The method generally includes the steps of (A) implementing a first engineering change order in the circuit design to correct a first of the violations, (B) implementing a second engineering change order with a special cell to correct a second of the violations, the special cell having a plurality of interfaces available for a signal path associated with the second violation, each of the interfaces having a characteristic appropriate to correct the second violation, each of the characteristics having a different performance and (C) routing the signal path to one of the interfaces to fix the second violation.

Abstract: A method and system is disclosed to improve the turnaround time to provide adequate time to meet project schedules in the event that adjustments or modifications to the design are necessary. A method for improving a turnaround time for design verification of a process database representing a semiconductor design includes the steps of (a) deriving a timing database and a (DNE) database from the process database; (b) performing, using the timing database, one or more design changes and one or more timing verifications and corrections to generate a modified timing database; (c) initiating, using the process database, physical validation of the semiconductor design prior to completion of step (b) to generate a modified DNE database; (d) merging the modified timing database with the modified DNE database to form a modified process database; and (e) performing, using the modified process database, one or more design verification checks of the semiconductor design.

Abstract: An apparatus comprising a first circuit, a second circuit and a third circuit is disclosed. The first circuit may be configured to generate a plurality of intermediate signals from a data signal. Each of the intermediate signals may be switchable between (i) a common delay and (ii) one of a plurality of different staggered delays determined by a stagger signal. The a second circuit may be configured to generate a plurality of first drive signals by gating the intermediate signals with a plurality of enable signals. The a third circuit may be configured to generate a plurality of first output signals at a transmit interface of a chip by buffering the first drive signals.

Abstract: A method and system is disclosed to improve the turnaround time to provide adequate time to meet project schedules in the event that adjustments or modifications to the design are necessary. A method for improving a turnaround time for design verification of a process database representing a semiconductor design includes the steps of (a) deriving a timing database and a (DNE) database from the process database; (b) performing, using the timing database, one or more design changes and one or more timing verifications and corrections to generate a modified timing database; (c) initiating, using the process database, physical validation of the semiconductor design prior to completion of step (b) to generate a modified DNE database; (d) merging the modified timing database with the modified DNE database to form a modified process database; and (e) performing, using the modified process database, one or more design verification checks of the semiconductor design.

Abstract: An on-chip decoupling capacitor cell is disclosed that is compatible with standard CMOS cells. A cell boundary defining the area of the cell includes a first transistor area and a second transistor area. A PMOS transistor having an n-well is formed within the first transistor area. The on-chip decoupling capacitor cell further includes an n-well extension that extends the n-well into the second transistor area, thereby providing a decoupling capacitor cell having reduced leakage compared to a CMOS capacitor cell, and increased capacitance per unit area compare with a traditional PMOS capacitor cell.

Abstract: A method for performing timing driven interconnect estimation analysis is disclosed. The method includes collecting data only from timing critical paths of at least one previous design, and generating statistical data based on a net length distribution of the timing critical paths. A wire load model is then generated for a new design from the statistical data.