Abstract: An end closure member (1) with a feed-through (5) having a feed-through entry opening (8) and a feed-through exit opening (9) and connection means (10) for forming a gas-tight connection between the end closure member (1) and the feed-through (5), the feed-through entry opening (8) cross-section being larger than the feed-through exit opening (9), and the connection means (10) being located in the area of the feed-through exit opening (9).

Abstract: Thin-film magnetic head having a head face (103) and comprising a magnetoresistive element (109) oriented transversely to the head face and a flux-guiding element (107) of a magnetically permeable material terminating in the head face. A peripheral area (109a) of the magnetoresistive element extending parallel to the head face is present opposite the flux-guiding element for forming a magnetic connection between the magnetoresistive element and the flux-guiding element. The flux-guiding element and the peripheral area of the magnetoresistive element constitute a common magnetic contact face (111), while the magnetically permeable material of the flux-guiding element is electrically insulating.

Abstract: Thin-film magnetic head having a head face (103) and comprising a magnetoresistive element (109) oriented transversely to the head face and a flux-guiding element (107) of a magnetically permeable material terminating in the head face. A peripheral area (109a) of the magnetoresistive element extending parallel to the head face is present opposite the flux-guiding element for forming a magnetic connection between the magnetoresistive element and the flux-guiding element. The flux-guiding element and the peripheral area of the magnetoresistive element constitute a common magnetic contact face (111), while the magnetically permeable material of the flux-guiding element is electrically insulating.

Abstract: A semiconductor device includes a transparent switching element (1) with two connection electrodes (2, 3) of a transparent material and an interposed transparent channel region (4) of a semiconductor material provided with a transparent gate electrode (5) of a conductive material, separated from the channel region (4) by a transparent insulating layer (6). The semiconductor material is a degenerate semiconductor material with a basic material having a bandgap (10) between conduction band (11) and valence band (12) of electrons greater than 2.5 eV and a mobility of charge carriers greater than 10 cm.sup.2 /Vs provided with dopant atoms which form a fixed impurity energy level (13) adjacent or in the valence band (12) or conduction band (11) of the basic material. The degenerate semiconductor material is transparent because the absorption of visible light is not possible owing to the great bandgap (10), while also no absorption of visible light takes place through the impurity energy levels (13).

Abstract: The invention provides a method of manufacturing potassium-lithium-niobate crystals having a composition which corresponds to the formula(K.sub.2 O).sub.0.3 (Li.sub.2 O).sub.0.2+a (Nb.sub.2 O.sub.5).sub.0.5+bwhere-0.01<a<0.01-0.005<b<0.005from a melt comprising potassium, lithium and niobium compounds. By adding a small quantity of vanadium, preferably in the form of V.sub.2 O.sub.5, considerably larger crystals are obtained. In addition, the homogeneity of these crystals is much better than that of the crystals obtained by the method according to the prior art.

Abstract: Monocrystalline MnZn-ferroferrite material having a high Zn-content, and magnetic head comprising the said material.A monocrystalline MnZn-ferroferrite material for use in a magnetic head is described. The material corresponds to the formulaMn.sub.a Zn.sub.b Fe.sub.c.sup.II Fe.sub.2.sup.III O.sub.4,wherein0.25<a<0.48;0.50<b<0.60;0.02<c<0.15;a+b+c=1.The magnetostriction constants of this material are particularly small.