Patents by Inventor Johannes Jacobus Matheus Baselmans
Johannes Jacobus Matheus Baselmans has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240045341Abstract: A method for improving a lithographic process of imaging a portion of a design layout onto a substrate using a lithographic apparatus. The method includes computing a multi-variable cost function that is a function of: (i) a plurality of design variables that affect characteristics of the lithographic process and (ii) a radiation bandwidth of a radiation source of the lithographic apparatus; and reconfiguring one or more of the characteristics (e.g., EPE, image contrast, resist, etc.) of the lithographic process by adjusting one or more of the design variables (e.g., source, mask layout, bandwidth, etc.) until a termination condition is satisfied. The termination condition includes a speckle characteristic (e.g., a speckle contrast) maintained within a speckle specification associated with the radiation source and also maintaining an image contrast associated with the lithographic process within a desired range. The speckle characteristic being a function of the radiation bandwidth.Type: ApplicationFiled: December 9, 2021Publication date: February 8, 2024Applicants: ASML NETHERLANDS B.V., Cymer, LLCInventors: Willard Earl CONLEY, Duan-Fu Stephen HSU, Joshua Jon THORNES, Johannes Jacobus Matheus BASELMANS
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Patent number: 11892776Abstract: Apparatuses and techniques for suppressing a zeroth order portion of a configured radiation beam. In some embodiments, an extreme ultraviolet (EUV) lithographic apparatus for forming an image on a substrate by use of an EUV radiation beam that is configured by a patterning device comprising a pattern of reflective regions and partially reflective regions, wherein the partially reflective regions are configured to suppress and apply a phase shift to a portion of the EUV radiation beam, may include a projection system. The projection system may be configured to suppress a zeroth order portion of a configured EUV radiation beam, and direct an unsuppressed portion of a configured EUV radiation beam towards a substrate to form an image on the substrate.Type: GrantFiled: December 12, 2019Date of Patent: February 6, 2024Assignee: ASML NETHERLANDS B.V.Inventors: Johannes Jacobus Matheus Baselmans, Duan-Fu Stephen Hsu, Willem Jan Bouman, Frank Jan Timmermans, Marie-claire Van Lare
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Publication number: 20230213871Abstract: A metrology system includes a radiation source, first, second, and third optical systems, and a processor. The first optical system splits the radiation into first and second beams of radiation and impart one or more phase differences between the first and second beams. The second optical system directs the first and second beams toward a target structure to produce first and second scattered beams of radiation. The third optical system interferes the first and second scattered beams at an imaging detector. The imaging detector generates a detection signal based on the interfered first and second scattered beams. The metrology system modulates one or more phase differences of the first and second scattered beams based on the imparted one or more phase differences. The processor analyzes the detection signal to determine a property of the target structure based on at least the modulated one or more phase differences.Type: ApplicationFiled: May 14, 2021Publication date: July 6, 2023Applicants: ASML Netherlands B.V., ASML Holding N.V.Inventors: Sebastianus Adrianus GOORDEN, Filippo ALPEGGIANI, Simon Reinald HUISMAN, Johannes Jacobus Matheus BASELMANS, Haico Victor KOK, Mohamed SWILLAM, Arjan Johannes Anton BEUKMAN
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Patent number: 11561478Abstract: A method for determining a component of optical characteristic of a patterning process. The method includes obtaining (i) a plurality of desired features, (ii) a plurality of simulated features based on the plurality of desired features and an optical characteristic of a patterning apparatus, and (iii) a performance metric (e.g., EPE) related to a desired feature of the plurality of desired features and an associated simulated feature of the plurality of simulated features; determining a set of optical sensitivities of the patterning process by computing a change in value of the performance metric based on a change in value of the optical characteristic; and identifying, based on the set of optical sensitivities, a set of components (e.g., principal components) of the optical characteristic that include dominant contributors in changing the value of the performance metric.Type: GrantFiled: December 12, 2019Date of Patent: January 24, 2023Assignee: ASML Netherlands B.V.Inventors: Johannes Jacobus Matheus Baselmans, Paulus Jacobus Maria Van Adrichem, Egbert Lenderink
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Patent number: 11474436Abstract: A method for tuning a target apparatus of a patterning process. The method includes obtaining a reference performance, and measurement data of a substrate subjected to the patterning process at the target apparatus, the measurement data indicative of a performance of the target apparatus; determining a cause of a performance mismatch based on a difference between the reference performance and the performance of the target apparatus, wherein the cause includes an optical characteristic; and responsive to the cause, adjusting an optical parameter associated with an adjustable optical characteristic to reduce the performance mismatch in the optical characteristic.Type: GrantFiled: June 11, 2019Date of Patent: October 18, 2022Assignee: ASML Netherlands B.V.Inventors: Bart Smeets, Anita Bouma, Johannes Jacobus Matheus Baselmans, Birgitt Noelle Cornelia Liduine Hepp, Paulus Hubertus Petrus Koller, Carsten Andreas Köhler
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Patent number: 11467507Abstract: A radiation system comprising a radiation source and a radiation conditioning apparatus, wherein the radiation source is configured to provide a radiation beam with wavelengths which extend from ultraviolet to infrared, and wherein the radiation conditioning apparatus is configured to separate the radiation beam into at least two beam portions and is further configured to condition the at least two beam portions differently.Type: GrantFiled: August 28, 2019Date of Patent: October 11, 2022Assignee: ASML Netherlands B.V.Inventor: Johannes Jacobus Matheus Baselmans
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Publication number: 20220082943Abstract: A method for determining a component of optical characteristic of a patterning process. The method includes obtaining (i) a plurality of desired features, (ii) a plurality of simulated features based on the plurality of desired features and an optical characteristic of a patterning apparatus, and (iii) a performance metric (e.g., EPE) related to a desired feature of the plurality of desired features and an associated simulated feature of the plurality of simulated features; determining a set of optical sensitivities of the patterning process by computing a change in value of the performance metric based on a change in value of the optical characteristic; and identifying, based on the set of optical sensitivities, a set of components (e.g., principal components) of the optical characteristic that include dominant contributors in changing the value of the performance metric.Type: ApplicationFiled: December 12, 2019Publication date: March 17, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Johannes Jacobus Matheus BASELMANS, Paulus Jacobus Maria VAN ADRICHEM, Egbert LENDERINK
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Publication number: 20220066327Abstract: Apparatuses and techniques for suppressing a zeroth order portion of a configured radiation beam. In some embodiments, an extreme ultraviolet (EUV) lithographic apparatus for forming an image on a substrate by use of an EUV radiation beam that is configured by a patterning device comprising a pattern of reflective regions and partially reflective regions, wherein the partially reflective regions are configured to suppress and apply a phase shift to a portion of the EUV radiation beam, may include a projection system. The projection system may be configured to suppress a zeroth order portion of a configured EUV radiation beam, and direct an unsuppressed portion of a configured EUV radiation beam towards a substrate to form an image on the substrate.Type: ApplicationFiled: December 12, 2019Publication date: March 3, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Johannes Jacobus Matheus BASELMANS, Duan-Fu Stephen HSU, Willem Jan BOUMAN, Frank Jan TIMMERMANS, Marie-Claire VAN LARE
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Publication number: 20210356871Abstract: A radiation system comprising a radiation source and a radiation conditioning apparatus, wherein the radiation source is configured to provide a radiation beam with wavelengths which extend from ultraviolet to infrared, and wherein the radiation conditioning apparatus is configured to separate the radiation beam into at least two beam portions and is further configured to condition the at least two beam portions differently.Type: ApplicationFiled: August 28, 2019Publication date: November 18, 2021Applicant: ASML Netherlands B.V.Inventor: Johannes Jacobus Matheus BASELMANS
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Patent number: 11106144Abstract: Method of determining a photodetector contribution to a measurement of apodization of a projection system of an immersion lithography apparatus, the method comprising providing a beam of radiation, illuminating an object with the beam of radiation, using the projection system to project an image of the object through a liquid layer and onto a photodetector, performing a first set of measurements of radiation intensity across a pupil plane of the projection system at a first liquid layer thickness, performing a second set of measurements of radiation intensity across the pupil plane of the projection system at a different liquid layer thickness, determining a set of intensity differences from the first set of measurements and the second set of measurements, comparing the determined set of intensity differences to an expected set of intensity difference, and using the results of the comparison to determine the photodetector contribution to a measurement of apodization.Type: GrantFiled: June 12, 2018Date of Patent: August 31, 2021Assignee: ASML Netherlands B.V.Inventors: Paulus Hubertus Petrus Koller, Johannes Jacobus Matheus Baselmans, Bartolomeus Petrus Rijpers
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Publication number: 20210247698Abstract: A method for tuning a target apparatus of a patterning process. The method includes obtaining a reference performance, and measurement data of a substrate subjected to the patterning process at the target apparatus, the measurement data indicative of a performance of the target apparatus; determining a cause of a performance mismatch based on a difference between the reference performance and the performance of the target apparatus, wherein the cause includes an optical characteristic; and responsive to the cause, adjusting an optical parameter associated with an adjustable optical characteristic to reduce the performance mismatch in the optical characteristic.Type: ApplicationFiled: June 11, 2019Publication date: August 12, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Bart SMEETS, Anita BOUMA, Johannes Jacobus Matheus BASELMANS, Birgitt Noelle Cornelia Liduine HEPP, Paulus Hubertus Petrus KOLLER, Carsten Andreas KÖHLER
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Publication number: 20210132507Abstract: Method of determining a photodetector contribution to a measurement of apodization of a projection system of an immersion lithography apparatus, the method comprising providing a beam of radiation, illuminating an object with the beam of radiation, using the projection system to project an image of the object through a liquid layer and onto a photodetector, performing a first set of measurements of radiation intensity across a pupil plane of the projection system at a first liquid layer thickness, performing a second set of measurements of radiation intensity across the pupil plane of the projection system at a different liquid layer thickness, determining a set of intensity differences from the first set of measurements and the second set of measurements, comparing the determined set of intensity differences to an expected set of intensity difference, and using the results of the comparison to determine the photodetector contribution to a measurement of apodization.Type: ApplicationFiled: June 12, 2018Publication date: May 6, 2021Applicant: ASML Netherlands B.V.Inventors: Paulus Hubertus Petrus KOLLER, Johannes Jacobus Matheus BASELMANS, Bartolomeus Petrus RIJPERS
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Patent number: 10996567Abstract: A method for quantifying the effect of pupil function variations on a lithographic effect within a lithographic apparatus is disclosed. The method comprises: determining a discrete, two-dimensional sensitivity map in a pupil plane of the lithographic apparatus, wherein the lithographic effect is given by the inner product of said sensitivity map with a discrete, two-dimensional pupil function variation map of a radiation beam in the pupil plane. The pupil plane of a lithographic apparatus generally refers to the exit pupil of a projection system of the lithographic apparatus. Pupil function variations may comprise: relative phase variations within the pupil plane and/or relative intensity variations within the pupil plane.Type: GrantFiled: May 31, 2018Date of Patent: May 4, 2021Assignee: ASML Netherlands B.V.Inventors: Johannes Jacobus Matheus Baselmans, Bart Smeets, Cristina Ioana Toma
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Patent number: 10845712Abstract: An optical system comprising: an illumination system configured, to form a periodic illumination mode comprising radiation in a pupil plane of the optical system having a spatial intensity profile which is periodic in at least one direction, a measurement system configured to measure a dose of radiation which is received in an field plane of the optical system as a function of position in the field plane, and a controller configured to: select one or more spatial frequencies in the field plane at which variation in the received dose of radiation as a function of position is caused by speckle, and determine a measure of the variation of the received dose of radiation as a function of position at the selected one or more spatial frequencies, the measure of the variation in the received dose being indicative of speckle in the field plane.Type: GrantFiled: September 19, 2019Date of Patent: November 24, 2020Assignee: ASML Netherlands B.V.Inventor: Johannes Jacobus Matheus Baselmans
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Publication number: 20200363573Abstract: A two-dimensional diffraction grating for a phase-stepping measurement system for determining an aberration map for a projection system comprises a substrate provided with a square array of through-apertures, wherein the diffraction grating is self-supporting. It will be appreciated that for a substrate provided with a square array of through-apertures to be self-supporting at least some substrate material is provided between each through-aperture and the adjacent through apertures. A method of designing a two-dimensional diffraction grating for a phase-stepping measurement system for determining an aberration map for a projection system comprises: selecting a general geometry for the two-dimensional diffraction grating, the general geometry having at least one parameter; and selecting values for the least one parameter that result in a grating efficiency map for the two-dimensional diffraction grating so as to control the contributions to a first harmonic of a phase stepping signal.Type: ApplicationFiled: January 4, 2019Publication date: November 19, 2020Applicant: ASML Netherlands B.V.Inventors: Pieter Cristiaan DE GROOT, Johannes Jacobus Matheus BASELMANS, Derick Yun Chek CHONG, Yassin CHOWDHURY
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Patent number: 10747120Abstract: A measurement method comprising using multiple radiation poles to illuminate a diffraction grating on a mask at a mask side of a projection system of a lithographic apparatus, coupling at least two different resulting diffraction orders per illumination pole through the projection system, using the projection system to project the diffraction orders onto a grating on a wafer such that a pair of combination diffraction orders is formed by diffraction of the diffraction orders, coupling the combination diffraction orders back through the projection system to detectors configured to measure the intensity of the combination diffraction orders, and using the measured intensity of the combination diffraction orders to measure the position of the wafer grating.Type: GrantFiled: September 2, 2019Date of Patent: August 18, 2020Assignee: ASML Netherlands B.V.Inventors: Carolus Johannes Catharina Schoormans, Petrus Franciscus Van Gils, Johannes Jacobus Matheus Baselmans
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Patent number: 10739684Abstract: In immersion lithography after exposure of a substrate is complete, a detector is used to detect any residual liquid remaining on the substrate and/or substrate table.Type: GrantFiled: June 27, 2019Date of Patent: August 11, 2020Assignee: ASML Netherlands B.V.Inventors: Bob Streefkerk, Johannes Jacobus Matheus Baselmans, Sjoerd Nicolaas Lambertus Donders, Christiaan Alexander Hoogendam, Jeroen Johannes Sophia Maria Mertens, Johannes Catharinus Hubertus Mulkens
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Patent number: 10732498Abstract: A patterning device comprising a reflective marker, wherein the marker comprises: a plurality of reflective regions configured to preferentially reflect radiation having a given wavelength; and a plurality of absorbing regions configured to preferentially absorb radiation having the given wavelength; wherein the absorbing and reflective regions are arranged to form a patterned radiation beam reflected from the marker when illuminated with radiation, and wherein the reflective regions comprise a roughened reflective surface, the roughened reflective surface being configured to diffuse radiation reflected from the reflective regions, and wherein the roughened reflective surface has a root mean squared roughness of about an eighth of the given wavelength or more.Type: GrantFiled: July 3, 2019Date of Patent: August 4, 2020Assignee: ASML Netherlands B.V.Inventors: Pieter Cristiaan De Groot, Gerard Frans Jozef Schasfoort, Maksym Yuriiovych Sladkov, Manfred Petrus Johannes Maria Dikkers, Jozef Maria Finders, Pieter-Jan Van Zwol, Johannes Jacobus Matheus Baselmans, Stefan Michael Bruno Baumer, Laurentius Cornelius De Winter, Wouter Joep Engelen, Marcus Adrianus Van De Kerkhof, Robbert Jan Voogd
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Patent number: 10705432Abstract: A substrate table of an immersion lithographic apparatus is disclosed which comprises a barrier configured to collect liquid. The barrier surrounds the substrate and is spaced apart from the substrate. In this way any liquid which is spilt from the liquid supply system can be collected to reduce the risk of contamination of delicate components of the lithographic projection apparatus.Type: GrantFiled: March 15, 2019Date of Patent: July 7, 2020Assignee: ASML Netherlands B.V.Inventors: Aleksey Yurievich Kolesnychenko, Johannes Jacobus Matheus Baselmans, Sjoerd Nicolaas Lambertus Donders, Christiaan Alexander Hoogendam, Hans Jansen, Jeroen Johannes Sophia Maria Mertens, Johannes Catharinus Hubertus Mulkens, Felix Godfried Peter Peeters, Bob Streefkerk, Franciscus Johannes Herman Maria Teunissen, Helmar Van Santen
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Publication number: 20200117093Abstract: A method for quantifying the effect of pupil function variations on a lithographic effect within a lithographic apparatus is disclosed. The method comprises: determining a discrete, two-dimensional sensitivity map in a pupil plane of the lithographic apparatus, wherein the lithographic effect is given by the inner product of said sensitivity map with a discrete, two-dimensional pupil function variation map of a radiation beam in the pupil plane. The pupil plane of a lithographic apparatus generally refers to the exit pupil of a projection system of the lithographic apparatus. Pupil function variations may comprise: relative phase variations within the pupil plane and/or relative intensity variations within the pupil plane.Type: ApplicationFiled: May 31, 2018Publication date: April 16, 2020Applicant: ASML Netherlands B.V.Inventors: Johannes Jacobus Matheus BASELMANS, Bart SMEETS, Cristina Ioana TOMA