Abstract: Method for fabricating a semiconductor memory element arrangement. A layer system, including a floating gate and a tunnel barrier arrangement formed on the floating gate, is formed on an electrically insulating layer. A first trench structure is formed in the layer system, and the first trench structure has first parallel trenches extending as far as the insulating layer. A second trench structure is formed in the layer system, and has second parallel trenches arranged perpendicular to the first trenches and extending as far as the insulating layer. First and second gate electrodes are formed in the first and second trench structures. The first gate electrode is adjacent to the floating gate through which first gate electrode electrical charge can be fed or can be dissipated from. The second gate electrode is adjacent to the tunnel barrier arrangement, and can control an electrical charge transmission of the tunnel barrier arrangement.

Abstract: The invention relates to a molecular electronics arrangement comprising a substrate, at least one first strip conductor having a surface and being arranged in or on the substrate, a spacer which is arranged on the surface of the at least one first strip conductor and which partially covers the surface of the at least one first strip conductor, and at least one second strip conductor which is arranged on the spacer and comprises a surface which faces the surface of the at least one first strip conductor in a plane manner. The spacer partially covers the surface of the at least one second strip conductor, and defines a pre-determined distance between the at least one first strip conductor and the at least one second strip conductor.

Abstract: A field-effect transistor that having a nanowire, which forms a source region, a channel region and a drain region of the field-effect transistor, the nanowire being a semiconducting and/or metallically conductive nanowire. The field-effect transistor also has at least one nanotube, which forms a gate region of the field-effect transistor, the nanotube being a semiconducting and/or metallically conductive nanotube. The nanowire and the nanotube are arranged at a distance from one another or set up in such a manner that it is substantially impossible for there to be a tunneling current between the nanowire and the nanotube, and that the conductivity of the channel region of the nanowire can be controlled by means of a field effect as a result of an electric voltage being applied to the nanotube.

Abstract: A method for detecting macromolecular biopolymers using a macromolecular biopolymer immobilizing unit integrated in or mounted on a substrate. The macromolecular biopolymer immobilizing unit is provided with capture molecules that bind macromolecular biopolymers. A sample is brought into contact with the macromolecular biopolymer immobilizing unit, and the sample contains the macromolecular biopolymers to be detected and bound to the capture molecules. Any capture molecules to which no macromolecular biopolymers have bound are removed, and then generation of a chemiluminescence signal is induced using a label located on the capture molecules. The chemiluminescence signal is detected using a detection unit, which is an integrated circuit in the substrate, resulting in the macromolecular biopolymers being detected.

Abstract: The invention relates to an SRAM memory cell, a memory cell arrangement and a method for fabricating a memory cell arrangement. The SRAM memory cell has six vertical transistors, of which four are connected up as flip-flip transistors and two are connected up as switching transistors, four of the vertical transistors being arranged at corners of the rectangular base area.

Abstract: The gate region of a field effect transistor comprises at least one through hole wherein a nanoelement is provided which is electrically coupled to the source and the drain. The nanoelement may have the conductance thereof controlled by means of the gate, such that the nanoelement forms a channel region of the field effect transistor.

Abstract: The invention relates to a method of detecting macromolecular biopolymers by means of an electrode arrangement that comprises a first and a second electrode. The inventive method is characterized by carrying out a first electrical measurement on the electrodes. In a further step, a solution to be examined, which may contain the macromolecular biopolymers to be detected, is contacted with the electrode arrangement. In another step, the macromolecular biopolymers to be detected that are contained it the solution to be examined are bound to the scavenger molecules on the first and on the second electrode and the electrode arrangement is contacted with a reagent to increase conductivity of the macromolecular biopolymers, said reagent binding to the macromolecular biopolymers and bestowing them with electroconductivity.

Abstract: A memory element with organic material comprises two metallized layers, arranged one on top of the other, with first lines and second lines which are arranged to intersect with each other. A channel is formed at the intersections between the first line and the second line, which overlaps the first line partially and completely overlaps the second line. The channels are filled with a filling material, the electrical conductivity of which may be altered by an applied electrical voltage.

Abstract: A device and method for detecting macromolecular biopolymers by using at least one unit for immobilizing biopolymers. In the device, the unit for immobilizing macromolecular biopolymers is provided with scavenger molecules that may bind macromolecular biopolymers and that have a label capable of generating a detectable signal. A detection unit in the device uses the label to detect macromolecular biopolymers bound to the scavenger molecules.

Abstract: An electronic device has a plurality of electrically conductive first nanowires, a layer system applied on the first nanowires, and also second nanowires applied on the layer system. The first and second nanowires are arranged skew with respect to one another. The layer system is set up in such a way that charge carriers generated by the nanowires can be stored in the layer system.

Abstract: The bar-type field effect transistor consists of a substrate, a bar placed above a substrate and a gate and spacer placed above part of the bar.

Abstract: The invention relates to electrodes which are provided with molecules that can bind macromolecular biopolymerss. A first electric measurement is carried out on the electrodes. A medium is contacted to said electrodes in such a way that biopolymers can specifically bind to first molecules or second molecules which are applied to the electrodes, when macromolecular biopolymers are present in the medium. Unbound first or second molecules are removed from the respective electrode and a second electric measurement is carried out. The macromolecular biopolymers are detected according to the measurements.

Abstract: A memory element with organic material comprises two metallised layers, arranged one on top of the other, with first lines and second lines which are arranged to intersect with each other. A channel is formed at the intersections between the first line and the second line, which overlaps the first line partially and completely overlaps the second line. The channels are filled with a filling material, the electrical conductivity of which may be altered by an applied electrical voltage.

Abstract: The invention relates to a field effect transistor comprising a nanowire forming a source region, a channel region and a drain region. A nanotube forming a gate region is arranged at a distance from the first nanotube or is fitted in such a way that essentially no tunnel flow between the nanotubes is possible and the conductivity of the channel region of the first nanotube can be regulated by means of a field effect by applying an electric voltage to the second nanotube.

Abstract: The gate region of a field effect transistor comprises at least one through hole wherein a nanoelement is provided which is electrically coupled to the source and the drain. The nanoelement may have the conductance thereof controlled by means of the gate, such that the nanoelement forms a channel region of the field effect transistor.

Abstract: The invention relates to a layer arrangement, a memory cell, a memory cell arrangement and a method for producing a layer arrangement. The layer arrangement has a monocrystalline substrate, a highly doped region in the substrate and a metallically conductive structure in the highly doped region, a partial region of the highly doped region that is arranged in a surface region of the substrate being monocrystalline.

Abstract: An electronic device has a plurality of electrically conductive first nanowires, a layer system applied on the first nanowires, and also second nanowires applied on the layer system. The first and second nanowires are arranged skew with respect to one another. The layer system is set up in such a way that charge carriers generated by the nanowires can be stored in the layer system.