Patents by Inventor Johannes Windeln
Johannes Windeln has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10283653Abstract: A stacked-layered thin film solar cell. The solar cell has reduced absorber thickness and an improved back contact for Copper Indium Gallium Selenide solar cells. The back contact provides improved reflectance particularly for infrared wavelengths while still maintaining ohmic contact to the semiconductor absorber. This reflectance is achieved by producing a back contact having a highly reflecting metal separated from an absorbing layer with a dielectric layer.Type: GrantFiled: March 3, 2017Date of Patent: May 7, 2019Assignee: International Business Machines CorporationInventors: Hans-Juergen Eickelmann, Michael Haag, Ruediger Kellmann, Markus Schmidt, Johannes Windeln
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Patent number: 9825192Abstract: Manufacture for an improved stacked-layered thin film solar cell. Solar cell has reduced absorber thickness and an improved back contact for Copper Indium Gallium Selenide solar cells. The back contact provides improved reflectance particularly for infrared wavelengths while still maintaining ohmic contact to the semiconductor absorber. This reflectance is achieved by producing a back contact having a highly reflecting metal separated from an absorbing layer with a dielectric layer.Type: GrantFiled: September 3, 2015Date of Patent: November 21, 2017Assignee: International Business Machines CorporationInventors: Hans-Juergen Eickelmann, Michael Haag, Ruediger Kellmann, Markus Schmidt, Johannes Windeln
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Patent number: 9773927Abstract: Manufacture of an improved stacked-layered thin film solar cell. The solar cell has reduced absorber thickness and an improved back contact for Copper Indium Gallium Selenide solar cells. The back contact provides improved reflectance particularly for infrared wavelengths while still maintaining ohmic contact to the semiconductor absorber. This reflectance is achieved by producing a back contact having a highly reflecting metal separated from an absorbing layer with a dielectric layer.Type: GrantFiled: April 26, 2016Date of Patent: September 26, 2017Assignee: International Business Machines CorporationInventors: Hans-Juergen Eickelmann, Michael Haag, Ruediger Kellmann, Markus Schmidt, Johannes Windeln
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Publication number: 20170179313Abstract: A stacked-layered thin film solar cell. The solar cell has reduced absorber thickness and an improved back contact for Copper Indium Gallium Selenide solar cells. The back contact provides improved reflectance particularly for infrared wavelengths while still maintaining ohmic contact to the semiconductor absorber. This reflectance is achieved by producing a back contact having a highly reflecting metal separated from an absorbing layer with a dielectric layer.Type: ApplicationFiled: March 3, 2017Publication date: June 22, 2017Applicant: International Business Machines CorporationInventors: Hans-Juergen Eickelmann, Michael Haag, Ruediger Kellmann, Markus Schmidt, Johannes Windeln
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Publication number: 20160240702Abstract: Manufacture of an improved stacked-layered thin film solar cell. The solar cell has reduced absorber thickness and an improved back contact for Copper Indium Gallium Selenide solar cells. The back contact provides improved reflectance particularly for infrared wavelengths while still maintaining ohmic contact to the semiconductor absorber. This reflectance is achieved by producing a back contact having a highly reflecting metal separated from an absorbing layer with a dielectric layer.Type: ApplicationFiled: April 26, 2016Publication date: August 18, 2016Applicant: International Business Machines CorporationInventors: Hans-Juergen Eickelmann, Michael Haag, Ruediger Kellmann, Markus Schmidt, Johannes Windeln
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Patent number: 9368666Abstract: Manufacture for an improved stacked-layered thin film solar cell. Solar cell has reduced absorber thickness and an improved back contact for Copper Indium Gallium Selenide solar cells. The back contact provides improved reflectance particularly for infrared wavelengths while still maintaining ohmic contact to the semiconductor absorber. This reflectance is achieved by producing a back contact having a highly reflecting metal separated from an absorbing layer with a dielectric layer.Type: GrantFiled: March 4, 2015Date of Patent: June 14, 2016Assignee: International Business Machines CorporationInventors: Hans-Juergen Eickelmann, Michael Haag, Ruediger Kellmann, Markus Schmidt, Johannes Windeln
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Patent number: 9246039Abstract: Manufacture for an improved stacked-layered thin film solar cell. Solar cell has reduced absorber thickness and an improved back contact for Copper Indium Gallium Selenide solar cells. The back contact provides improved reflectance particularly for infrared wavelengths while still maintaining ohmic contact to the semiconductor absorber. This reflectance is achieved by producing a back contact having a highly reflecting metal separated from an absorbing layer with a dielectric layer.Type: GrantFiled: October 12, 2012Date of Patent: January 26, 2016Assignee: International Business Machines CorporationInventors: Hans-Juergen Eickelmann, Michael Haag, Ruediger Kellmann, Markus Schmidt, Johannes Windeln
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Publication number: 20150380587Abstract: Manufacture for an improved stacked-layered thin film solar cell. Solar cell has reduced absorber thickness and an improved back contact for Copper Indium Gallium Selenide solar cells. The back contact provides improved reflectance particularly for infrared wavelengths while still maintaining ohmic contact to the semiconductor absorber. This reflectance is achieved by producing a back contact having a highly reflecting metal separated from an absorbing layer with a dielectric layer.Type: ApplicationFiled: September 3, 2015Publication date: December 31, 2015Applicant: International Business Machines CorporationInventors: Hans-Juergen Eickelmann, Michael Haag, Ruediger Kellmann, Markus Schmidt, Johannes Windeln
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Publication number: 20150179859Abstract: Manufacture for an improved stacked-layered thin film solar cell. Solar cell has reduced absorber thickness and an improved back contact for Copper Indium Gallium Selenide solar cells. The back contact provides improved reflectance particularly for infrared wavelengths while still maintaining ohmic contact to the semiconductor absorber. This reflectance is achieved by producing a back contact having a highly reflecting metal separated from an absorbing layer with a dielectric layer.Type: ApplicationFiled: March 4, 2015Publication date: June 25, 2015Applicant: International Business Machines CorporationInventors: Hans-Juergen Eickelmann, Michael Haag, Ruediger Kellmann, Markus Schmidt, Johannes Windeln
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Patent number: 8792318Abstract: An approach is presented for designing a polymeric layer for nanometer scale thermo-mechanical storage devices. Cross-linked polyimide oligomers are used as the recording layers in atomic force data storage device, giving significantly improved performance when compared to previously reported cross-linked and linear polymers. The cross-linking of the polyimide oligomers may be tuned to match thermal and force parameters required in read-write-erase cycles. Additionally, the cross-linked polyimide oligomers are suitable for use in nano-scale imaging.Type: GrantFiled: January 9, 2012Date of Patent: July 29, 2014Assignee: International Business Machines CorporationInventors: Urs T. Duerig, Jane Elizabeth Frommer, Bernd Walter Gotsmann, Erik Christopher Hagberg, James Lupton Hedrick, Armin W. Knoll, Victor Yee-Way Lee, Teddie Peregrino Magbitang, Robert Dennis Miller, Russell Clayton Pratt, Charles Gordon Wade, Johannes Windeln
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Publication number: 20140102509Abstract: Manufacture for an improved stacked-layered thin film solar cell. Solar cell has reduced absorber thickness and an improved back contact for Copper Indium Gallium Selenide solar cells. The back contact provides improved reflectance particularly for infrared wavelengths while still maintaining ohmic contact to the semiconductor absorber. This reflectance is achieved by producing a back contact having a highly reflecting metal separated from an absorbing layer with a dielectric layer.Type: ApplicationFiled: October 12, 2012Publication date: April 17, 2014Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Hans-Juergen Eickelmann, Michael Haag, Ruediger Kellmann, Markus Schmidt, Johannes Windeln
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Publication number: 20130061401Abstract: A solvent wash employing a polar washing solvent is employed to effectively remove the sizing agent on a woven glass cloth, while retaining the tensile strength of the woven glass cloth. Loss of tensile strength of the woven glass cloth due to removal of a sizing agent from the woven glass cloth is compensated by simultaneous or subsequent deposition of a coupling agent on surfaces from which the sizing agent is removed. The concurrent removal of the sizing agent and deposition of the coupling agent provides an effective removal of the sizing agent while maintaining sufficient tensile strength to structurally support the woven glass cloth. Further, integration of the removal of the sizing agent and the simultaneous deposition of the coupling agent in the washing solvent in a same processing step can provide a cost-effective manufacturing method for forming a finished woven glass cloth.Type: ApplicationFiled: September 13, 2011Publication date: March 14, 2013Applicants: PARK ELECTROCHEMICAL CORP., INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Dylan J. Boday, Michael Haag, Ruediger Kellmann, Joseph Kuczynski, Markus Schmidt, Johannes Windeln, Silvio Bertling
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Patent number: 8369204Abstract: An approach is presented for designing a polymeric layer for nanometer scale thermo-mechanical storage devices. Cross-linked polyimide oligomers are used as the recording layers in atomic force data storage device, giving significantly improved performance when compared to previously reported cross-linked and linear polymers. The cross-linking of the polyimide oligomers may be tuned to match thermal and force parameters required in read-write-erase cycles. Additionally, the cross-linked polyimide oligomers are suitable for use in nano-scale imaging.Type: GrantFiled: October 18, 2011Date of Patent: February 5, 2013Assignee: International Business Machines CorporationInventors: Urs T. Duerig, Jane Elizabeth Frommer, Bernd Walter Gotsmann, Erik Christopher Hagberg, James Lupton Hedrick, Armin W. Knoll, Victor Yee-Way Lee, Teddie Peregrino Magbitang, Robert Dennis Miller, Russell Clayton Pratt, Charles Gordon Wade, Johannes Windeln
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Patent number: 8368519Abstract: Embodiments embed at least one Radio Frequency Identification (RFID) tag into the mold. The mold may comprise a cavity adapted to the geometrical form of the RFID tag. In some embodiments, the cavity is marginally bigger than the RFID tag. In many embodiments, the cavity with the embedded the RFID tag is covered by glue. Thus, the mold, the RFID tag and the glue may be suitable for temperatures up to, e.g., 400° C. Further the mold and the glue may be resistant to concentrated sulfuric acid and formic acid. The serial number of the mold may be stored in the RFID tag. The RFID tag may detect characteristic data during the transfer of the solder from the mold to the wafer. In one embodiment, the RFID tag may detect the temperature. In another embodiment, a plurality of RFID tags may detect various temperatures for controlling the packaging process.Type: GrantFiled: October 9, 2008Date of Patent: February 5, 2013Assignee: International Business Machines CorporationInventors: Hartmut Kuehl, Joerg Weyerhaeuser, Johannes Windeln
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Patent number: 8289833Abstract: An approach is presented for designing a polymeric layer for nanometer scale thermo-mechanical storage devices. Cross-linked polyimide oligomers are used as the recording layers in atomic force data storage device, giving significantly improved performance when compared to previously reported cross-linked and linear polymers. The cross-linking of the polyimide oligomers may be tuned to match thermal and force parameters required in read-write-erase cycles. Additionally, the cross-linked polyimide oligomers are suitable for use in nano-scale imaging.Type: GrantFiled: October 18, 2011Date of Patent: October 16, 2012Assignee: International Business Machines CorporationInventors: Urs T. Duerig, Jane Elizabeth Frommer, Bernd Walter Gotsmann, Erik Christopher Hagberg, James Lupton Hedrick, Armin W. Knoll, Victor Yee-Way Lee, Teddie Peregrino Magbitang, Robert Dennis Miller, Russell Clayton Pratt, Charles Gordon Wade, Johannes Windeln
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Publication number: 20120155242Abstract: An approach is presented for designing a polymeric layer for nanometer scale thermo-mechanical storage devices. Cross-linked polyimide oligomers are used as the recording layers in atomic force data storage device, giving significantly improved performance when compared to previously reported cross-linked and linear polymers. The cross-linking of the polyimide oligomers may be tuned to match thermal and force parameters required in read-write-erase cycles. Additionally, the cross-linked polyimide oligomers are suitable for use in nano-scale imaging.Type: ApplicationFiled: January 9, 2012Publication date: June 21, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Urs T. Duerig, Jane Elizabeth Frommer, Bernd Walter Gotsmann, Erik Christopher Hagberg, James Lupton Hedrick, Armin W. Knoll, Victor Yee-Way Lee, Teddie Peregrino Magbitang, Robert Dennis Miller, Russell Clayton Pratt, Charles Gordon Wade, Johannes Windeln
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Patent number: 8129496Abstract: An approach is presented for designing a polymeric layer for nanometer scale thermo-mechanical storage devices. Cross-linked polyimide oligomers are used as the recording layers in atomic force data storage device, giving significantly improved performance when compared to previously reported cross-linked and linear polymers. The cross-linking of the polyimide oligomers may be tuned to match thermal and force parameters required in read-write-erase cycles. Additionally, the cross-linked polyimide oligomers are suitable for use in nano-scale imaging.Type: GrantFiled: March 27, 2008Date of Patent: March 6, 2012Assignee: International Business Machines CorporationInventors: Urs T. Duerig, Jane Elizabeth Frommer, Bernd Walter Gotsmann, Erik Christopher Hagberg, James Lupton Hedrick, Armin W. Knoll, Victor Yee-Way Lee, Teddie Peregrino Magbitang, Robert Dennis Miller, Russell Clayton Pratt, Charles Gordon Wade, Johannes Windeln
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Publication number: 20120033539Abstract: An approach is presented for designing a polymeric layer for nanometer scale thermo-mechanical storage devices. Cross-linked polyimide oligomers are used as the recording layers in atomic force data storage device, giving significantly improved performance when compared to previously reported cross-linked and linear polymers. The cross-linking of the polyimide oligomers may be tuned to match thermal and force parameters required in read-write-erase cycles. Additionally, the cross-linked polyimide oligomers are suitable for use in nano-scale imaging.Type: ApplicationFiled: October 18, 2011Publication date: February 9, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Urs T. Duerig, Jane Elizabeth Frommer, Bernd Walter Gotsmann, Erik Christopher Hagberg, James Lupton Hedrick, Armin W. Knoll, Victor Yee-Way Lee, Teddie Peregrino Magbitang, Robert Dennis Miller, Russell Clayton Pratt, Charles Gordon Wade, Johannes Windeln
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Publication number: 20120034383Abstract: An approach is presented for designing a polymeric layer for nanometer scale thermo-mechanical storage devices. Cross-linked polyimide oligomers are used as the recording layers in atomic force data storage device, giving significantly improved performance when compared to previously reported cross-linked and linear polymers. The cross-linking of the polyimide oligomers may be tuned to match thermal and force parameters required in read-write-erase cycles. Additionally, the cross-linked polyimide oligomers are suitable for use in nano-scale imaging.Type: ApplicationFiled: October 18, 2011Publication date: February 9, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Urs T. Duerig, Jane Elizabeth Frommer, Bernd Walter Gotsmann, Erik Christopher Hagberg, James Lupton Hedrick, Armin W. Knoll, Victor Yee-Way Lee, Teddie Peregrino Magbitang, Robert Dennis Miller, Russell Clayton Pratt, Charles Gordon Wade, Johannes Windeln
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Patent number: 8102753Abstract: An approach is presented for designing a polymeric layer for nanometer scale thermo-mechanical storage devices. Cross-linked polyimide oligomers are used as the recording layers in atomic force data storage device, giving significantly improved performance when compared to previously reported cross-linked and linear polymers. The cross-linking of the polyimide oligomers may be tuned to match thermal and force parameters required in read-write-erase cycles. Additionally, the cross-linked polyimide oligomers are suitable for use in nano-scale imaging.Type: GrantFiled: February 21, 2006Date of Patent: January 24, 2012Assignee: International Business Machines CorporationInventors: Urs T. Duerig, Jane Elizabeth Frommer, Bernd Walter Gotsmann, Erik Christopher Hagberg, James Lupton Hedrick, Armin W. Knoll, Victor Yee-Way Lee, Teddie Peregrino Magbitang, Robert Dennis Miller, Russell Clayton Pratt, Charles Gordon Wade, Johannes Windeln