Abstract: The invention features a system for microlithography that includes a mercury light source configured to emit radiation at multiple mercury emission lines, a projection objective positioned to receive radiation emitted by the mercury light source, and a stage configured to position a wafer relative to the projection objective. During operation, the projection objective directs radiation from the light source to the wafer, where the radiation at the wafer includes energy from more than one of the emission lines. Optical lens systems for use in said projection objective comprise four lens groups, each having two lenses comprising silica, the first and second lens groups on one hand and the third and fourth lens groups on the other hand are positioned symmetrically with respect to a plane perpendicular to the optical axis of said lens system.

Abstract: A projection objective 1 for short wavelengths, in particular for wavelengths ?<157 nm is provided with a number of mirrors [M1, M2, M3, M4, M5 and M6] that are arranged positioned precisely in relation to an optical axis 5. The mirrors [M1, M2, M3, M4, M5 and M6] have multilayer coatings. At least two different mirror materials are provided which differ in the rise in the coefficient of thermal expansion as a function of temperature in the region of the zero crossing of the coefficients of thermal expansion, in particular in the sign of the size.

Abstract: There is provided an optical component. The optical component includes a material having a coefficient of thermal expansion ?, where the coefficient of thermal expansion is dependent on location. The following applies to the location-dependent coefficient of thermal expansion: ?= ?±??, with ?? being the maximum deviation of the coefficient of thermal expansion from the mean value of the coefficient of thermal expansion ? of the material. The following homogeneity condition applies to the material: ? ?? ? ? ( 0.14 + 0.1 · x + 390 x ) · ? _ Q . ?with the progress of the lacation-dependent progress of the coefficient of thermal expansion being periodical with a wavelength x given in mm, and the thermal output which is absorbed by the optical component being designated by Q given in watts (W), the resulting emissivity being designated by ?, and |??|in units of ppb K .

Abstract: The invention features a system for microlithography that includes a mercury light source configured to emit radiation at multiple mercury emission lines, a projection objective positioned to receive radiation emitted by the mercury light source, and a stage configured to position a wafer relative to the projection objective. During operation, the projection objective directs radiation from the light source to the wafer, where the radiation at the wafer includes energy from more than one of the emission lines. Optical lens systems for use in said projection objective comprise four lens groups, each having two lenses comprising silica, the first and second lens groups on one hand and the third and fourth lens groups on the other hand are positioned symmetrically with respect to a plane perpendicular to the optical axis of said lens system.

Abstract: The disclosure relates a projection objective for imaging an object field in an object plane into an image field in an image plane. The disclosure also relates to a microlithographic projection exposure apparatus including such a projection objective. The disclosure further relates to methods of using such a projection exposure apparatus to fabricate microstructured or nanostructured components, such as highly integrated semiconductor components. In addition, the disclosure relates to components fabricated by such methods.

Abstract: The disclosure relates an illumination system configured to guide illumination light from a radiation source to an object plane and to provide defined illumination of an object field in the object plane, wherein illumination light is supplied to the object field by a bundle-guiding optical pupil component which is disposed in a pupil plane of the projection objective, and wherein at least another bundle-guiding component is disposed upstream of the pupil component in the beam path of the illumination light. The disclosure further concerns a projection exposure apparatus that includes such an illumination system of this type, a method of fabricating a microstructured component using such a projection exposure apparatus, and a microstructured component fabricated using such a method.

Abstract: A projection exposure apparatus for transferring an image of a patterned reticle onto a substrate comprises an illumination optical system for generating and directing an exposure beam onto the reticle, and a projection optical system provided between the reticle and the substrate. The projection optical system has a plurality of imaging mirrors each having a mirror support made of a support material. The support materials are subject to thermal expansion during projection that induces imaging aberrations at substrate level. The support materials are selected such that an aberration merit function, which is indicative of the overall amount of at least one type of the thermally induced aberrations, is minimized by mutual compensation of contributions of the mirrors to the one type of thermally induced aberrations. As a result, the mirror supports will then generally be different and have, when heated during exposure, different coefficients of thermal expansion.

Abstract: A lithographic apparatus includes an illumination system configured to provide a beam of radiation, and a projection system configured to project the beam of radiation. The lithographic apparatus also includes a cooling system that is arranged to pass gas through the interior of the projection system such that the throughput of gas through the interior of the projection system is greater than 100 liters of gas per hour.

Abstract: A projection objective 1 for short wavelengths, in particular for wavelengths ?<157 nm is provided with a number of mirrors M1, M2, M3, M4, M5 and M6 that are arranged positioned precisely in relation to an optical axis 5. The mirrors M1, M2, M3, M4, M5 and M6 have multilayer coatings. At least two different mirror materials are provided which differ in the rise in the coefficient of thermal expansion as a function of temperature in the region of the zero crossing of the coefficients of thermal expansion, in particular in the sign of the size.

Abstract: A projection exposure apparatus for transferring an image of a patterned reticle onto a substrate comprises an illumination optical system for generating and directing an exposure beam onto the reticle, and a projection optical system provided between the reticle and the substrate. The projection optical system has a plurality of imaging mirrors each having a mirror support made of a support material. The support materials are subject to thermal expansion during projection that induces imaging aberrations at substrate level. The support materials are selected such that an aberration merit function, which is indicative of the overall amount of at least one type of the thermally induced aberrations, is minimized by mutual compensation of contributions of the mirrors to the one type of thermally induced aberrations. As a result, the mirror supports will then generally be different and have, when heated during exposure, different coefficients of thermal expansion.

Abstract: The invention relates to an optical component comprising a material which has a coefficient of thermal expansion ?.