Patents by Inventor John Adams
John Adams has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11980972Abstract: A forming system includes a femtosecond laser and a control unit that includes one or more processors operatively connected to the femtosecond laser. The femtosecond laser is configured to emit laser pulses onto an inner surface of a face sheet of an acoustic inner barrel. The acoustic inner barrel includes an acoustic core comprising an array of hexagonal cells attached to an outer surface of the face sheet that is opposite the inner surface. The control unit is configured to control the femtosecond laser to laser drill a plurality of perforations in the face sheet via emitting laser pulses at pulse durations between about 100 femtoseconds and about 10,000 femtoseconds and at frequencies over 100,000 Hz.Type: GrantFiled: June 9, 2021Date of Patent: May 14, 2024Inventors: Jake Adam Reeves, Mark Alan Negley, Eric Herrera, John Scott Bauman, Brandon L. Bertolucci, Perry T. Horst
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Publication number: 20240150406Abstract: Charged nutritive proteins are provided. In some embodiments the nutritive proteins an aqueous solubility of at least 12.5 g/L at pH 7. In some embodiments the nutritive proteins an aqueous solubility of at least 50 g/L at pH 7. In some embodiments the nutritive proteins an aqueous solubility of at least 100 g/L at pH 7.Type: ApplicationFiled: October 10, 2023Publication date: May 9, 2024Inventors: David Arthur Berry, Brett Adam Boghigian, Nathaniel W. Silver, Geoffrey von Maltzahn, Michael Hamill, Rajeev Chillakuru, John F. Kramarczyk
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Publication number: 20240150685Abstract: The present invention relates to a product for machine dishwashing, comprising a capsule containing two or more compartments. The first compartment contains a solid, powdered first composition; and a second compartment contains liquid or gel second composition. The bleaching performance has been optimised, leading to better removal of tea stains. This has been achieved by an optimal combination of an alkali metal carbonate, a bleach component, sodium silicate and/or sodium disilicate, a bleach catalyst, and a maximum amount of tetraacetylethylenediamine.Type: ApplicationFiled: March 10, 2022Publication date: May 9, 2024Applicant: Conopco Inc., d/b/a UNILEVERInventors: Amanda Jane Adams, Robert John Carswell, Graham Corlett, Marina Mixtro Serrasqueiro
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Patent number: 11977004Abstract: Capillary-based pressure threshold sensors are provided for liquids that exploit the properties of hydrophobic, superhydrophobic, oleophobic and amphiphobic porous membranes to detect when fluid passes through the membrane in the event of the pressure across the membrane rising above the breakthrough pressure of a fluid. Example implementations are provided of different configurations for a capillary-based pressure threshold sensor, and of how a capillary-based pressure threshold sensor is used in a medication delivery device or other fluid delivery devices to detect occlusion or other fluid flow condition.Type: GrantFiled: May 21, 2021Date of Patent: May 7, 2024Assignee: Becton, Dickinson and CompanyInventors: Steve Beguin, John Adams, Danielle Aboud, Maurice Curtin
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Patent number: 11978478Abstract: A speech recognition system utilizing automatic speech recognition techniques such as end-pointing techniques in conjunction with beamforming and/or signal processing to isolate speech from one or more speaking users from multiple received audio signals and to detect the beginning and/or end of the speech based at least in part on the isolation. Audio capture devices such as microphones may be arranged in a beamforming array to receive the multiple audio signals. Multiple audio sources including speech may be identified in different beams and processed.Type: GrantFiled: March 13, 2023Date of Patent: May 7, 2024Assignee: Amazon Technologies, Inc.Inventors: Kenneth John Basye, Jeffrey Penrod Adams
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Publication number: 20240140307Abstract: A lighting system may be for a vehicle cup holder installed in a vehicle. The lighting system may include a first inductive member to be positioned adjacent a back side of the vehicle cup holder, and a first controller configured to inductively couple power and command signals through the first inductive member. The lighting system may also include a lighting device to be positioned adjacent a front side of the vehicle cup holder. The lighting device, in turn, may include a second inductive member configured for inductive coupling with the first inductive member, at least one light, and a second controller configured to operate the at least one light based upon power and command signals inductively coupled to the second inductive member from the first inductive member.Type: ApplicationFiled: June 14, 2023Publication date: May 2, 2024Applicants: Voxx International Corporation, Nissan North America, Inc.Inventors: John Adams, Jason Gossiaux, Mangesh Vinayak Soman, Doug Kline, Jonathan Grasso, Steven Young, Nelson Phan
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Publication number: 20240147867Abstract: Magnetoelectric magnetic tunnel junction (MEMTJ) logic devices comprise a magnetoelectric switching capacitor coupled to a pair of magnetic tunnel junctions (MTJs) by a conductive layer. The logic state of the MEMTJ is represented by the magnetization orientation of the ferromagnetic layer of the magnetoelectric capacitor, which can be switched through the application of an appropriate input voltage to the MEMTJ. The magnetization orientation of the magnetoelectric capacitor ferromagnetic layer is read out by the MTJs. The conductive layer is positioned between the capacitor and the MTJs. The MTJ ferromagnetic free layers are exchange coupled to the ferromagnetic layer of the magnetoelectric capacitor. The potential of an MTJ free layer is based on a supply voltage applied to the reference layer of the MTJ. The MTJ reference layers have a magnetization orientation that is parallel or antiparallel to the magnetization orientations of the ferromagnetic layer of the magnetoelectric capacitor.Type: ApplicationFiled: October 31, 2022Publication date: May 2, 2024Applicant: Intel CorporationInventors: Punyashloka Debashis, Dominique A. Adams, Hai Li, Chia-Ching Lin, Dmitri Evgenievich Nikonov, Kaan Oguz, John J. Plombon, Ian Alexander Young
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Publication number: 20240146226Abstract: A system for shifting operation modes of Variable Flux Memory Motor (VFMM) from external inputs includes one or more VFMMs that convert electrical power to kinetic energy, the one or more VFMMs being configured to shift to any one of a plurality of operation modes, one or more man-machine interfaces that receive one or more external inputs from a user, the one or more external inputs being indicative of a target operation mode from the plurality of operation modes selected by the user, and a controller that shifts the operation mode of the one or more VFMMs to the target operation mode based on the one or more external inputs received from the one or more man-machine interfaces.Type: ApplicationFiled: October 26, 2023Publication date: May 2, 2024Applicant: Jacobi Motors, LLCInventors: Nicolaus Adam Radford, Iain Cooper, Pierre-Olivier Gourmelon, John Parry
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Publication number: 20240113212Abstract: Technologies for a field effect transistor (FET) with a ferroelectric gate dielectric are disclosed. In an illustrative embodiment, a perovskite stack is grown on a buffer layer as part of manufacturing a transistor. The perovskite stack includes one or more doped semiconductor layers alternating with other lattice-matched layers, such as undoped semiconductor layers. Growing the doped semiconductor layers on lattice-matched layers can improve the quality of the doped semiconductor layers. The lattice-matched layers can be preferentially etched away, leaving the doped semiconductor layers as fins for a ribbon FET. In another embodiment, an interlayer can be deposited on top of a semiconductor layer, and a ferroelectric layer can be deposited on the interlayer. The interlayer can bridge a gap in lattice parameters between the semiconductor layer and the ferroelectric layer.Type: ApplicationFiled: September 29, 2022Publication date: April 4, 2024Applicant: Intel CorporationInventors: Ian Alexander Young, Dmitri Evgenievich Nikonov, Marko Radosavljevic, Matthew V. Metz, John J. Plombon, Raseong Kim, Kevin P. O'Brien, Scott B. Clendenning, Tristan A. Tronic, Dominique A. Adams, Carly Rogan, Hai Li, Arnab Sen Gupta, Gauri Auluck, I-Cheng Tung, Brandon Holybee, Rachel A. Steinhardt, Punyashloka Debashis
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Publication number: 20240110104Abstract: Processes are described for the production of a pitch for use in the manufacture of carbon composite materials. The process comprises the steps of providing a purified coal product (PCP), wherein the PCP is in particulate form, and wherein at least about 90% by volume (% v) of the particles are no greater than about 25 ?m in diameter; wherein the PCP has an ash content of less than about 10% m; and combining the PCP with a feedstock for pitch to create a combined blended mixture suitable for thermal reaction followed by distillation to create a resultant pitch. The combined blended mixture comprises at least around 0.1% m and at most around 90% m PCP. Composite materials that find utility as carbon electrodes, particularly electrolytic baked carbon anodes, can be made from combining the pitch and PCP with a filler material, such as a pet coke.Type: ApplicationFiled: January 26, 2022Publication date: April 4, 2024Applicant: Arq IP LimitedInventors: John Francis Unsworth, Jeramie Adams, Seth Taylor Bassham, Stephen Carl Paspek, Khalid Baig
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Publication number: 20240113220Abstract: Technologies for a transistor with a thin-film ferroelectric gate dielectric are disclosed. In the illustrative embodiment, a transistor has a thin layer of scandium aluminum nitride (ScxAl1-xN) ferroelectric gate dielectric. The channel of the transistor may be, e.g., gallium nitride or molybdenum disulfide. In one embodiment, the ferroelectric polarization changes when voltage is applied and removed from a gate electrode, facilitating switching of the transistor at a lower applied voltage. In another embodiment, the ferroelectric polarization of a gate dielectric of a transistor changes when the voltage is past a positive threshold value or a negative threshold value. Such a transistor can be used as a one-transistor memory cell.Type: ApplicationFiled: September 30, 2022Publication date: April 4, 2024Applicant: Intel CorporationInventors: Arnab Sen Gupta, Ian Alexander Young, Dmitri Evgenievich Nikonov, Marko Radosavljevic, Matthew V. Metz, John J. Plombon, Raseong Kim, Uygar E. Avci, Kevin P. O'Brien, Scott B. Clendenning, Jason C. Retasket, Shriram Shivaraman, Dominique A. Adams, Carly Rogan, Punyashloka Debashis, Brandon Holybee, Rachel A. Steinhardt, Sudarat Lee
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Publication number: 20240105810Abstract: In one embodiment, transistor device includes a first source or drain material on a substrate, a semiconductor material on the first source or drain material, a second source or drain material on the semiconductor material, a dielectric layer on the substrate and adjacent the first source or drain material, a ferroelectric (FE) material on the dielectric layer and adjacent the semiconductor material, and a gate material on or adjacent to the FE material. The FE material may be a perovskite material and may have a lattice parameter that is less than a lattice parameter of the semiconductor material.Type: ApplicationFiled: September 23, 2022Publication date: March 28, 2024Applicant: Intel CorporationInventors: Rachel A. Steinhardt, Ian Alexander Young, Dmitri Evgenievich Nikonov, Marko Radosavljevic, Matthew V. Metz, John J. Plombon, Raseong Kim, Kevin P. O'Brien, Scott B. Clendenning, Tristan A. Tronic, Dominique A. Adams, Carly Rogan, Arnab Sen Gupta, Brandon Holybee, Punyashloka Debashis, I-Cheng Tung, Gauri Auluck
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Publication number: 20240097031Abstract: In one embodiment, a transistor device includes a gate material layer on a substrate, a ferroelectric (FE) material layer on the gate material, a semiconductor channel material layer on the FE material layer, a first source/drain material on the FE material layer and adjacent the semiconductor channel material layer, and a second source/drain material on the FE material layer and adjacent the semiconductor channel material layer and on an opposite side of the semiconductor channel material layer from the first source/drain material. A first portion of the FE material layer is directly between the gate material and the first source/drain material, and a second portion of the FE material layer is directly between the gate material and the second source/drain material.Type: ApplicationFiled: September 16, 2022Publication date: March 21, 2024Applicant: Intel CorporationInventors: Punyashloka Debashis, Rachel A. Steinhardt, Brandon Holybee, Kevin P. O'Brien, Dmitri Evgenievich Nikonov, John J. Plombon, Ian Alexander Young, Raseong Kim, Carly Rogan, Dominique A. Adams, Arnab Sen Gupta, Marko Radosavljevic, Scott B. Clendenning, Gauri Auluck, Hai Li, Matthew V. Metz, Tristan A. Tronic, I-Cheng Tung
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Publication number: 20240094423Abstract: Aspects provide for methods that successfully evaluates multiple compressional and shear arrival events received by a sonic logging tool to evaluate the presence of structures, such as shoulder beds, in downhole environments. In particular, the methods described herein enable automated determination of properties of laminated reservoir formations by, for example, enabling the automated determination of arrival times and slownesses of multiple compressional and shear arrival events received by a sonic logging tool.Type: ApplicationFiled: February 8, 2022Publication date: March 21, 2024Inventors: Nicholas Norman Bennett, Ting Lei, Erik Wielemaker, Lin Liang, Romain Prioul, John Adam Donald, Olga Podgornova
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Publication number: 20240082448Abstract: A scent dispensing device may comprise a scent vial holder configured to hold a scent vial, a top having a plurality of openings, the plurality of openings including a scent opening and an airflow opening, a heater configured to apply heat to the scent vial, and a fan configured to cause a flow of air to pass through the airflow opening creating a difference in air pressure between the airflow opening and the scent opening such that scent from the scent vial is drawn through the scent opening and into the flow of air.Type: ApplicationFiled: September 13, 2023Publication date: March 14, 2024Inventors: Rachel Beckstead, Celeste Chubak, Hannah Trimble, Juan Carlos Altuna, David Frietag, John Adam Purin, Kenneth Frei
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Patent number: 11919956Abstract: Provided herein are novel antigen binding domains and antibodies (e.g., heterodimeric antibodies) that bind Prostate Specific Membrane Antigen (PSMA). In exemplary embodiments, the anti-PSMA antibodies also bind CD3. Such antibodies that bind PSMA and CD3 are useful, for example in the treatment of PSMA-related cancer.Type: GrantFiled: May 14, 2021Date of Patent: March 5, 2024Assignee: Xencor, Inc.Inventors: John R. Desjarlais, Alex Nisthal, Michael Hedvat, Matthew Adam Dragovich
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Publication number: 20240069239Abstract: Methods and systems are provided that perform sonic measurements in a high-angle wellbore or horizontal wellbore or vertical wellbore penetrating highly dipped formation layers where the formation layers can have a high degree of dip relative to the wellbore. Sonic data can be generated from the sonic measurements and processed using multiple arrival event processing to determine formation porosity, elastic rock properties and geometric information for a tool layer and nearby shoulder bed. Such information can be integrated into a 2D or 3D layered model of the formation. The elastic rock properties of the tool layer and shoulder bed derived from the multiple arrival event processing can provide more representative elastic property values, which can account for heterogeneity along the wellbore.Type: ApplicationFiled: August 30, 2023Publication date: February 29, 2024Inventors: Nicholas N. Bennett, John Adam Donald, Olusegun M. Akinyose, Shouxiang Mark Ma, Sherif Ghadiry, Wael Abdallah
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Patent number: D1017430Type: GrantFiled: April 15, 2022Date of Patent: March 12, 2024Assignee: Aurora Operations, Inc.Inventors: Woonghee Han, Daniel Adam Kanitz, John Paxton, Chad Jonathan Staller, Jon Wagner
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Patent number: D1018329Type: GrantFiled: April 15, 2022Date of Patent: March 19, 2024Assignee: Aurora Operations, Inc.Inventors: Woonghee Han, Daniel Adam Kanitz, John Paxton, Chad Jonathan Staller, Jon Wagner
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Patent number: D1024805Type: GrantFiled: April 15, 2022Date of Patent: April 30, 2024Assignee: AURORA OPERATIONS, INC.Inventors: Woonghee Han, Daniel Adam Kanitz, John Paxton, Chad Jonathan Staller, Jon Wagner