Patents by Inventor John C. Marinace

John C. Marinace has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma formation of hydride compounds
    Patent number: 4945857
    Abstract: The synthesis of hydride compounds by reacting both the ingredients of the compound and the hydrogen together in the presence of energy sufficient to ionize the hydrogen. An inert bombardment ingredient enhances efficiency. In situ generation of ingredients such as arsine is provided within the reactor adjacent the deposition site in chemical vapor deposition.
    Type: Grant
    Filed: March 15, 1989
    Date of Patent: August 7, 1990
    Assignee: International Business Machines Corporation
    Inventor: John C. Marinace
  • Adhesion of a photoresist to a substrate
    Patent number: 4524126
    Abstract: A process for improving the adhesion of a photoresist to a substrate by applying a layer of titanium, zirconium, hafnium and/or oxide thereof between the photoresist and substrate.
    Type: Grant
    Filed: December 7, 1984
    Date of Patent: June 18, 1985
    Assignee: International Business Machines Corporation
    Inventors: John C. Marinace, Ralph C. McGibbon
  • Conductive silicon carbide
    Patent number: 4451391
    Abstract: Silicon carbide material retains the hardness, wear and heat resistance properties and can be rendered conductive by the incorporation of an element of the same valence as silicon and carbon in quantities in the range of 0.01% to 0.03%. Germanium in this range in SiC is conductive. The material is very hard, is electrically conductive in the 2.times.10.sup.-4 ohm cm range and is useful in highly corrosive and abrasive applications.
    Type: Grant
    Filed: September 24, 1982
    Date of Patent: May 29, 1984
    Assignee: International Business Machines Corporation
    Inventor: John C. Marinace
  • Epitaxial tunnels from intersecting growth planes
    Patent number: 4210470
    Abstract: Epitaxial tunnels may be formed in crystalline bodies of crystalline materials by growth of the material on a substrate having two intersecting crystallographic planes that exhibit rapid epitaxial growth and by maintaining the growth until the structure forming along those planes closes, thereby producing a tunnel. P-n junction structures can be made in semiconductor devices by appropriate techniques.
    Type: Grant
    Filed: June 13, 1979
    Date of Patent: July 1, 1980
    Assignee: International Business Machines Corporation
    Inventor: John C. Marinace
  • Formation of epitaxial tunnels utilizing oriented growth techniques
    Patent number: 4178197
    Abstract: Epitaxial tunnels may be formed in crystalline bodies of crystalline materials by growth of the material on a substrate having two intersecting crystallographic planes that exhibit rapid epitaxial growth and by maintaining the growth until the structure forming along those planes closes, thereby producing a tunnel. P-n junction structures can be made in semiconductor devices by appropriate techniques.
    Type: Grant
    Filed: March 5, 1979
    Date of Patent: December 11, 1979
    Assignee: International Business Machines Corporation
    Inventor: John C. Marinace