Abstract: A dynamic mask exposure method and system includes a support for a workpiece, a source of a beam of exposure radiation, and a transmissive dynamic mask with orthogonally arranged matrices of actuator lines and binary pixel units which are opaque or transparent as a function of control inputs to the actuator lines, the transmissive dynamic mask having a top surface and a bottom surface. A control system is connected to supply pixel control signals to the actuator lines of the transmissive dynamic mask to form a scanning pattern of transparent regions and opaque regions which scans across the dynamic mask. The beam is directed down onto the top surface of the mask and through a slit in a diaphragm onto the workpiece. The beam passes through the transparent regions and projects a pattern from the mask onto the support where the workpiece.

Abstract: A dynamic mask exposure system includes a support, a source of a beam, and a transmissive dynamic phase-shifting mask with orthogonally arranged matrices of actuator lines and binary pixel units which are opaque or transparent as a function of control inputs to the actuator lines. A control system is connected to supply pixel control signals to the actuator lines of the mask to form a pattern of transparent regions and opaque regions. The beam is directed onto the mask. A pattern detection element is located on the support. The beam passes through the transparent regions and projects a pattern from the mask onto the support or onto the image detection element. Where the image detection element is the target, there are means for providing signals representing the pattern to the control system.

Abstract: A dynamic mask exposure system and method includes a support for a workpiece, a source of a beam of exposure radiation, and a transmissive dynamic phase-shifting mask with orthogonally arranged matrices of actuator lines and binary pixel units which are opaque or transparent as a function of control inputs to the actuator lines, the transmissive dynamic mask having a top surface and a bottom surface. A control system is connected to supply pixel control signals to the actuator lines of the transmissive dynamic mask to form a pattern of transparent regions and opaque regions. The beam is directed down onto the top surface of the mask. A workpiece and/or an image detection element for detecting a pattern of radiation projected thereon is located on the top surface of the support. The beam passes through the transparent regions and projecting a pattern from the mask onto the support where the workpiece or onto the image detection element is to be located.

Abstract: A dynamic mask exposure system and method includes a support for a workpiece, a source of a beam of exposure radiation, and a transmissive dynamic phase-shifting mask with orthogonally arranged matrices of actuator lines and binary pixel units which are opaque or transparent as a function of control inputs to the actuator lines. The transmissive dynamic mask has a top surface and a bottom surface. A control system is connected to supply pixel control signals to the actuator lines of the transmissive dynamic mask to form a pattern of transparent regions and opaque regions. The beam is directed down onto the top surface of the mask. A workpiece and/or an image detection element for detecting a pattern of radiation projected thereon is located on the top surface of the support. The beam passes through the transparent regions and projects a pattern from the mask onto the support where the workpiece or onto the image detection element is to be located.

Abstract: The present invention provides an anti-reflection films for lithographic application on polysilicon containing substrate. A structure for improving lithography patterning in an integrated circuit comprises a polysilicon layer, a diaphanous layer located above the polysilicon layer, an anti-reflection layer located above the diaphanous layer, and then a photoresist layer located above the anti-reflection layer for patterning the integrated circuit pattern. The anti-reflection layer is preferably oxynitride.

Abstract: The present invention provides an anti-reflection film for lithographic application on tungsten-silicide containing substrate. In one embodiment of the present invention, a structure for improving lithography patterning in integrated circuit comprises a tungsten-silicide layer, a diaphanous layer located above the tungsten-silicide layer, an anti-reflection layer located above the diaphanous layer, and a photoresist layer located above the anti-reflection layer for patterning the integrated circuit pattern.