Abstract: A damascene gate semiconductor structure that is formed utilizing a silicide stop layer. Initially, a gate opening is provided in an insulating layer on a substrate. A first dielectric layer is deposited in the gate opening over the substrate. A silicide stop layer is then deposited in the gate opening over the first silicon layer. A second silicon layer is then deposited in the gate opening over the silicide stop layer. A metal or alloy layer is then deposited over the insulating and the second silicon layer. The damascene semiconductor structure is then temperature treated to react the metal or alloy layer with the second silicon layer to form a silicide layer. Any unreated metal or alloy is then removed from the metal or alloy layer.

Abstract: A slider for use during production of a rigid memory disk comprises a rigid body fabricated from a single phase material having a fracture toughness greater than 4 MPam0.5. A head gimbal assembly and a test device are also provided. The head gimbal assembly comprises a flexure and a slider secured to the flexure's distal end portion. The test device comprises a support structure, a rotary drive operative to rotate a disk thereon relative to the support structure, a head gimbal assembly, a piezoelectric transducer supported on the slider of the head gimbal assembly for producing an electronic signal in response to asperity detection, signal processing electronics for processing the electronic signal, and electrical Interconnects for establishing communication between the transducer and the signal processing electronics.

Abstract: A self-aligned silicide process that can accommodate a low thermal budget and form silicide regions of small dimensions in a controlled reaction. In a first temperature treatment, nickel metal or nickel alloy is reacted with a silicon material to form at least one high resistance nickel silicide region. Unreacted nickel is removed. A dielectric layer is then deposited over a high resistance nickel silicide regions. In a second temperature treatment, the at least one high resistance nickel silicide region and dielectric layer are reacted at a prescribed temperature to form at least one low resistance silicide region and process the dielectric layer. Bridging between regions is avoided by the two-step process as silicide growth is controlled, and unreacted nickel between silicide regions is removed after the first temperature treatment. The processing of the high resistance nickel silicide regions and the dielectric layer are conveniently combined into a single temperature treatment.

Abstract: A water quality improvement process is provided for acid water containing sulphate and/or sulphite ions. The water is continuously fed into a fluidized bed containing calcium carbonate particles. The water consumes calcium carbonate and has its pH increased while calcium sulphate CaSO.sub.4 and/or CaSO.sub.3 are produced.

Abstract: Wipers for sliding electrical contact have a form with gradual and progressive reduction in width and therfore decreasing stiffness and mass as they proceed towards the tip. This form results in higher resonant vibrational frequencies, enabling a wiper to follow the contact surface in high speed motion with less contact force. The lower contact force in turn produces less wiper distortion and consequently less hysteresis and wear.