Patents by Inventor John D. Demaree

John D. Demaree has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus for growth of dilute-nitride materials using an isotope for enhancing the sensitivity of resonant nuclear reaction analysis
    Patent number: 8505481
    Abstract: In certain desirable embodiments, the present invention relates to the use of 15N isotopes into GaAsN, InAsN or GaSbN films for ion beam analysis. A semiconductor-nitride assembly for growing and analyzing crystal growth in a group III-V semiconductor sample that includes: a substrate; a buffer layer deposited on the substrate, a nitrogen gas injector to incorporate enriched nitrogen gas and the nitrogen gas injector includes a concentration of enriched nitrogen gas, a thin film consisting of at least one group III element containing compound where at least one group III element is covalently bonded with the nitrogen in the presence of the same or different group V element of the buffer layer, and a proton beam to analyze the incorporation of the nitrogen gas in the thin film layer is described.
    Type: Grant
    Filed: June 1, 2012
    Date of Patent: August 13, 2013
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Stefan P Svensson, John D Demaree
  • APPARATUS FOR GROWTH OF DILUTE-NITRIDE MATERIALS USING AN ISOTOPE FOR ENHANCING THE SENSITIVITY OF RESONANT NUCLEAR REACTION ANALYSIS
    Publication number: 20130112140
    Abstract: In certain desirable embodiments, the present invention relates to the use of 15N isotopes into GaAsN, InAsN or GaSbN films for ion beam analysis. A semiconductor-nitride assembly for growing and analyzing crystal growth in a group III-V semiconductor sample that includes: a substrate; a buffer layer deposited on the substrate, a nitrogen gas injector to incorporate enriched nitrogen gas and the nitrogen gas injector includes a concentration of enriched nitrogen gas, a thin film consisting of at least one group III element containing compound where at least one group III element is covalently bonded with the nitrogen in the presence of the same or different group V element of the buffer layer, and a proton beam to analyze the incorporation of the nitrogen gas in the thin film layer is described.
    Type: Application
    Filed: June 1, 2012
    Publication date: May 9, 2013
    Applicant: U.S. Government as represented by the Secretary of the Army
    Inventors: Stefan P Svensson, John D Demaree
  • Method for growth of dilute-nitride materials using an isotope for enhancing the sensitivity of resonant nuclear reation analysis
    Patent number: 8222052
    Abstract: In certain desirable embodiments, the present invention relates to the use of 15N isotopes into GaAsN, InAsN or GaSbN films for ion beam analysis. A semiconductor-nitride assembly for growing and analyzing crystal growth in a group III-V semiconductor sample that includes: a substrate; a buffer layer deposited on the substrate, a nitrogen gas injector to incorporate enriched nitrogen gas and the nitrogen gas injector includes a concentration of enriched nitrogen gas, a thin film consisting of at least one group III element containing compound where at least one group III element is covalently bonded with the nitrogen in the presence of the same or different group V element of the buffer layer, and a proton beam to analyze the incorporation of the nitrogen gas in the thin film layer is described.
    Type: Grant
    Filed: December 1, 2009
    Date of Patent: July 17, 2012
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Stefan P. Svensson, John D. Demaree
  • METHOD FOR GROWTH OF DILUTE-NITRIDE MATERIALS USING AN ISOTOPE FOR ENHANCING THE SENSITIVITY OF RESONANT NUCLEAR REATION ANALYSIS
    Publication number: 20110129949
    Abstract: In certain desirable embodiments, the present invention relates to the use of 15N isotopes into GaAsN, InAsN or GaSbN films for ion beam analysis. A semiconductor-nitride assembly for growing and analyzing crystal growth in a group III-V semiconductor sample that includes: a substrate; a buffer layer deposited on the substrate, a nitrogen gas injector to incorporate enriched nitrogen gas and the nitrogen gas injector includes a concentration of enriched nitrogen gas, a thin film consisting of at least one group III element containing compound where at least one group III element is covalently bonded with the nitrogen in the presence of the same or different group V element of the buffer layer, and a proton beam to analyze the incorporation of the nitrogen gas in the thin film layer is described.
    Type: Application
    Filed: December 1, 2009
    Publication date: June 2, 2011
    Applicant: The United State of America as represented by the Secretary of the Army
    Inventors: Stefan P. Svensson, John D. Demaree
  • Dynamic process for enhancing the wear resistance of ferrous articles
    Patent number: 7669358
    Abstract: A dynamic process for increasing the wear life of ferrous articles subjected to a high-temperature environment created by combustion of a propellant or fuel comprises selecting the propellant or fuel so that its combustion products include relatively large amounts of nitrogen, which nitrogen forms a protective nitride layer on the surface of the ferrous article. Disclosed is a specific embodiment of the invention for prolonging the wear life of gun barrels.
    Type: Grant
    Filed: March 19, 2007
    Date of Patent: March 2, 2010
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Paul J. Conroy, Charles S. Leveritt, John D. Demaree, James Hirvonen
  • Dynamic process for enhancing the wear resistance of ferrous articles
    Patent number: 7191558
    Abstract: A dynamic process for increasing the wear life of ferrous articles subjected to a high-temperature environment created by combustion of a propellant or fuel comprises selecting the propellant or fuel so that its combustion products include relatively large amounts of nitrogen, which nitrogen forms a protective nitride layer on the surface of the ferrous article. Disclosed is a specific embodiment of the invention for prolonging the wear life of gun barrels.
    Type: Grant
    Filed: November 10, 2004
    Date of Patent: March 20, 2007
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Paul J. Conroy, Charles S. Leveritt, John D. Demaree, James Hirvonen