Patents by Inventor John E. Florkey
John E. Florkey has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20110108919Abstract: The present invention provides a semiconductor structure including a buried resistor with improved control, in which the resistor is fabricated in a region of a semiconductor substrate beneath a well region that is also present in the substrate. In accordance with the present invention, the inventive structure includes a semiconductor substrate containing at least a well region; and a buried resistor located in a region of the semiconductor substrate that is beneath said well region. The present invention also provides a method of fabricating such a structure in which a deep ion implantation process is used to form the buried resistor and a shallower ion implantation process is used in forming the well region.Type: ApplicationFiled: January 13, 2011Publication date: May 12, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Anil K. Chinthakindi, Douglas D. Coolbaugh, Keith E. Downes, Ebenezer E. Eshun, John E. Florkey, Heidi L. Greer, Robert M. Rassel, Anthony K. Stamper, Kunal Vaed
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Patent number: 7910450Abstract: The present invention provides a semiconductor structure including a buried resistor with improved control, in which the resistor is fabricated in a region of a semiconductor substrate beneath a well region that is also present in the substrate. In accordance with the present invention, the inventive structure includes a semiconductor substrate containing at least a well region; and a buried resistor located in a region of the semiconductor substrate that is beneath said well region. The present invention also provides a method of fabricating such a structure in which a deep ion implantation process is used to form the buried resistor and a shallower ion implantation process is used in forming the well region.Type: GrantFiled: February 22, 2006Date of Patent: March 22, 2011Assignee: International Business Machines CorporationInventors: Anil K. Chinthakindi, Douglas D. Coolbaugh, Keith E. Downes, Ebenezer E. Eshun, John E. Florkey, Heidi L. Greer, Robert M. Rassel, Anthony K. Stamper, Kunal Vaed
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Patent number: 7735216Abstract: Carriers (10) holding parts (50) for assembling complex MEMS devices are transported to a central assembly location. The parts are stacked in a pre-assigned order and later released from their carriers. Alternatively, they are positioned over the appropriate location and released so as to fall into position as needed. The assembly area (100) includes a cavity below the plane of the carriers such that the parts held within the carrier drop into the cavity. Heating elements are integrated into the cavity to assist in the release of the parts. The cavity is supplied with parts by one or more carriers which are move around by any number of MEMS drive systems (200, 250). The cavity and some of the MEMS assembled therein deliver with precision amounts of materials as required suitable for biomedical applications, or may be processed in-situ, as in an on-chip laboratory.Type: GrantFiled: January 15, 2004Date of Patent: June 15, 2010Assignee: International Business Machines CorporationInventors: Christopher M. Schnabel, Peter A. Smith, John E. Florkey, Richard P. Volant
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Patent number: 7691717Abstract: A polysilicon containing resistor includes: (1) a p dopant selected from the group consisting of boron and boron difluoride; and (2) an n dopant selected from the group consisting of arsenic and phosphorus. Each of the p dopant and the n dopant has a dopant concentration from about 1e18 to about 1e21 dopant atoms per cubic centimeter. A method for forming the polysilicon resistor uses corresponding implant doses from about 1e14 to about 1e16 dopant ions per square centimeter. The p dopant and the n dopant may be provided simultaneously or sequentially. The method provides certain polysilicon resistors with a sheet resistance percentage standard deviation of less than about 1.5%, for a polysilicon resistor having a sheet resistance from about 100 to about 5000 ohms per square.Type: GrantFiled: July 19, 2006Date of Patent: April 6, 2010Assignee: International Business Machines CorporationInventors: Anil K. Chinthakindi, Douglas D. Coolbaugh, Ebenezer E. Eshun, John E. Florkey, Robert M. Rassel, Kunal Vaed
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Publication number: 20090019691Abstract: Carriers (10) holding parts (50) for assembling complex MEMS devices are transported to a central assembly location. The parts are stacked in a pre-assigned order and later released from their carriers. Alternatively, they are positioned over the appropriate location and released so as to fall into position as needed. The assembly area (100) includes a cavity below the plane of the carriers such that the parts held within the carrier drop into the cavity. Heating elements are integrated into the cavity to assist in the release of the parts. The cavity is supplied with parts by one or more carriers which are move around by any number of MEMS drive systems (200, 250). The cavity and some of the MEMS assembled therein deliver with precision amounts of materials as required suitable for biomedical applications, or may be processed in-situ, as in an on-chip laboratory.Type: ApplicationFiled: January 15, 2004Publication date: January 22, 2009Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Christopher M. Schnabel, Peter A. Smith, John E. Florkey, Richard P. Volant
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Patent number: 7410894Abstract: A method of forming a semiconductor structure, and the semiconductor structure so formed, wherein a transmission line, such as an inductor, is formed on a planar level above the surface of a last metal wiring level.Type: GrantFiled: July 27, 2005Date of Patent: August 12, 2008Assignee: International Business Machines CorporationInventors: Anil K. Chinthakindi, Douglas D. Coolbaugh, John E. Florkey, Jeffrey P. Gambino, Zhong-Xiang He, Anthony K. Stamper, Kunal Vaed
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Publication number: 20080122574Abstract: A polysilicon containing resistor includes: (1) a p dopant selected from the group consisting of boron and boron difluoride; and (2) an n dopant selected from the group consisting of arsenic and phosphorus. Each of the p dopant and the n dopant has a dopant concentration from about 1e18 to about 1e21 dopant atoms per cubic centimeter. A method for forming the polysilicon resistor uses corresponding implant doses from about 1e14 to about 1e16 dopant ions per square centimeter. The p dopant and the n dopant may be provided simultaneously or sequentially. The method provides certain polysilicon resistors with a sheet resistance percentage standard deviation of less than about 1.5%, for a polysilicon resistor having a sheet resistance from about 100 to about 5000 ohms per square.Type: ApplicationFiled: July 19, 2006Publication date: May 29, 2008Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Anil K. Chinthakindi, Douglas D. Coolbaugh, Ebenezer E. Eshun, John E. Florkey, Robert M. Rassel, Kunal Vaed
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Patent number: 7285472Abstract: Various methods of fabricating a high precision, silicon-containing resistor in which the resistor is formed as a discrete device integrated in complementary metal oxide semiconductor (CMOS) processing utilizing low temperature silicidation are provided. In some embodiments, the Si-containing layer is implanted with a high dose of ions prior to activation. The activation can be performed by the deposition of a protective dielectric layer, or a separate activation anneal. In another embodiment, a highly doped in-situ Si-containing layer is used thus eliminating the need for implanting into the Si-containing layer.Type: GrantFiled: January 27, 2005Date of Patent: October 23, 2007Assignee: International Business Machines CorporationInventors: Douglas D. Coolbaugh, John E. Florkey, Robert M. Rassel
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Patent number: 6831542Abstract: A micro-electro mechanical (MEM) switch capable of inductively coupling and decoupling electrical signals is described. The inductive MEM switch consists of a first plurality of coils on a movable platform and a second plurality of coils on a stationary platform or substrate, the coils on the movable platform being above or below those in the stationary substrate. Coupling and decoupling occurs by rotating or by laterally displacing the coils of the movable platform with respect to the coils on the stationary substrate. Diverse arrangements of coils respectively on the movable and stationary substrates allow for a multi-pole and multi-position switching configurations. The MEM switches described eliminate problems of stiction, arcing and welding of the switch contacts. The MEMS switches of the invention can be fabricated using standard CMOS techniques.Type: GrantFiled: February 26, 2003Date of Patent: December 14, 2004Assignee: International Business Machines CorporationInventors: Richard P. Volant, John E. Florkey, Robert A. Groves
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Publication number: 20040164825Abstract: A micro-electromechanical (MEM) switch capable of inductively coupling and decoupling electrical signals is described. The inductive MEM switch consists of a first plurality of coils on a moveable platform and a second plurality of coils on a stationary platform or substrate, the coils on the moveable platform being above or below those in the stationary substrate. Coupling and decoupling occurs by rotating or by laterally displacing the coils of the moveable platform with respect to the coils on the stationary substrate. Diverse arrangements of coils respectively on the moveable and stationary substrates allow for a multi-pole and multi-position switching configurations. The MEM switches described eliminate problems of stiction, arcing and welding of the switch contacts. The MEMS switches of the invention can be fabricated using standard CMOS techniques.Type: ApplicationFiled: February 26, 2003Publication date: August 26, 2004Applicant: International Business Machines CorporationInventors: Richard P. Volant, John E. Florkey, Robert A. Groves