Abstract: A method for detecting a high pressure condition within a high voltage vacuum device includes detecting the position of a movable structure such as a bellows or flexible diaphragm. The position at high pressures can be detected optically by the interruption or reflection of light beams, or electrically by sensing contact closure or deflection via strain gauges. Electrical sensing is provided by microcircuits that are operated at high voltage device potentials, transmitting pressure information via RF or optical signals.

Abstract: A method for detecting a high pressure condition within a high voltage vacuum device includes detecting the position of a movable structure such as a bellows or flexible diaphragm. The position at high pressures can be detected optically by the interruption or reflection of light beams, or electrically by sensing contact closure or deflection via strain gauges. Electrical sensing is provided by microcircuits that are operated at high voltage device potentials, transmitting pressure information via RF or optical signals.

Abstract: A method for detecting a high pressure condition within an interrupter includes measuring the intensity of light emitted from an arc created by contacts within the interrupter, comparing the measured intensity with a predetermined value, and providing an indication when the measured intensity exceeds the predetermined value.

Abstract: The present invention provides a multi-layer semiconductor memory device comprising: a bottom electrode having a bottom layer, an upper interface layer and an intermediate tuning layer disposed between the bottom layer and the upper interface layer; a top electrode; and a high dielectric constant dielectric layer disposed between the bottom electrode and the top electrode. The present invention further provides an apparatus and a method for manufacturing high density DRAMs having capacitors having high quality HDC materials and low leakage currents. Another aspect of the present invention provides an electrode-dielectric interface that nucleates high quality HDC films. The present invention further provides an apparatus and a method for manufacturing capacitors within a high aspect ratio aperture.

Abstract: A method and apparatus for analyzing and comparing in real-time the presence of contaminants in a semiconductor substrate processing system. The analysis is made and compared against a statistical baseline of data points established from the analysis of acceptable substrates undergoing the same procedure. A decision can then be made as to whether to remove the wafers for reprocessing. The comparison is to be made not only with the above baseline, but also in accordance with process dependent information provided by a supplemental data port in the processing tool. Thus, the baseline is dynamic and not a static, pre-determined figure.

Abstract: A method and apparatus for detecting target misalignment and plasma instability in a sputtering chamber in a semiconductor fabrication system is provided. In certain embodiments, a detector is utilized to monitor the voltage of the power applied to bias the target. If the voltage fluctuates excessively, plasma instability and target misalignment is indicated.

Abstract: The present invention provides techniques for processing effluent gases from vacuum fabrication processes. The effluent gases are condensed on cold surfaces (512 and 514) inside a novel pump (220) resulting in a high vacuum. The pump (220) can be connected to a vacuum fabrication processing chamber (210) and to a turbo molecular pump (275). The condensate which is formed on the cold surfaces of the pump (220) is subsequently evaporated to form regenerated gases during the regeneration of the pump. A pressure vessel (280) is removably connected to the pump during regeneration, causing the regenerated gases to fill the pump and the pressure vessel at pressures ranging from about 10,343 torr (200 psi) to about 103,430 torr ( 2,000 psi). The pressure vessel is closed when substantially all condensate has evaporated. The vessel containing regenerated gases can then be connected to an on-site or to a remote gas treatment facility for removal of noxious substances.