Abstract: A device comprises a window layer and a light-directing structure comprising a porous semiconductor layer formed in an n-type region. The device comprises a semiconductor structure, disposed between the window layer and the light-directing structure, comprising a light emitting layer. An opening is formed in the semiconductor structure. A first metal layer is in direct contact with the light-directing structure. A dielectric layer is disposed over the first metal layer and in the opening. A second metal layer is disposed over the dielectric layer. A transparent conductive oxide is disposed between the p-type region and the window layer and in direct contact with the p-type region. A first hole is formed in the dielectric layer, wherein the first hole exposes the transparent conductive oxide such that the second metal layer is in direct contact with the transparent conductive oxide through the first hole.

Abstract: A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure is disposed between a window layer and a light-directing structure. The light-directing structure is configured to direct light toward the window layer; examples of suitable light-directing structures include a porous semiconductor layer and a photonic crystal. An n-contact is electrically connected to the n-type region and a p-contact is electrically connected to the p-type region. The p-contact is disposed in an opening formed in the semiconductor structure.

Abstract: Very thin flash modules for cameras are described that do not appear as a point source of light to the illuminated subject. Therefore, the flash is less objectionable to the subject. In one embodiment, the light emitting surface area is about 5 mm×10 mm. Low profile, side-emitting LEDs optically coupled to solid light guides enable the flash module to be thinner than 2 mm. The flash module may also be continuously energized for video recording. The module is particularly useful for cell phone cameras and other thin cameras.

Abstract: A method according embodiments of the invention includes growing a semiconductor structure on a substrate including silicon. The semiconductor substrate includes an aluminum-containing layer in direct contact with the substrate, and a III-nitride light emitting layer disposed between an n-type region and a p-type region. The method further includes removing the substrate. After removing the substrate, a transparent material is formed in direct contact with the aluminum-containing layer. The transparent material is textured.

Abstract: LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features.

Abstract: Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process.

Abstract: LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features.

Abstract: Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process.

Abstract: Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process.

Abstract: A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure is disposed between a window layer and a light-directing structure. The light-directing structure is configured to direct light toward the window layer; examples of suitable light-directing structures include a porous semiconductor layer and a photonic crystal. An n-contact is electrically connected to the n-type region and a p-contact is electrically connected to the p-type region. The p-contact is disposed in an opening formed in the semiconductor structure.

Abstract: Very thin flash modules for cameras are described that do not appear as a point source of light to the illuminated subject. Therefore, the flash is less objectionable to the subject. In one embodiment, the light emitting surface area is about 5 mm×10 mm. Low profile, side-emitting LEDs optically coupled to solid light guides enable the flash module to be thinner than 2 mm. The flash module may also be continuously energized for video recording. The module is particularly useful for cell phone cameras and other thin cameras.

Abstract: LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features.

Abstract: Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process.

Abstract: A semiconductor structure includes an n-type region, a p-type region, and a III-nitride light emitting layer disposed between the n-type region and the p-type region. The III-nitride light emitting layer has a lattice constant greater than 3.19 ?. Such a semiconductor structure may be grown on a substrate including a host and a seed layer bonded to the host. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.

Abstract: A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.

Abstract: A semiconductor structure formed on a growth substrate and including a light emitting layer disposed between an n-type region and a p-type region is attached to a carrier by a connection that supports the semiconductor structure sufficiently to permit removal of the growth substrate. In some embodiments, the semiconductor structure is a flip chip device. The semiconductor structure may be attached to the carrier by, for example, a metal bond that supports almost the entire lateral extent of the semiconductor structure, or by interconnects such as solder or gold stud bumps. An underfill material which supports the semiconductor structure is introduced in any spaces between the interconnects. The underfill material may be a liquid that is cured to form a rigid structure. The growth substrate may then be removed without causing damage to the semiconductor structure.

Abstract: A light emitting device is produced by depositing a layer of wavelength converting material over the light emitting device, testing the device to determine the wavelength spectrum produced and correcting the wavelength converting member to produce the desired wavelength spectrum. The wavelength converting member may be corrected by reducing or increasing the amount of wavelength converting material. In one embodiment, the amount of wavelength converting material in the wavelength converting member is reduced, e.g., through laser ablation or etching, to produce the desired wavelength spectrum.

Abstract: LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features.

Abstract: A coaching device and method for providing emergency medical care instructions is shown. The device can include a memory, an audio input, an audio output, a visual display, and a processor. The memory stores a file set made up of multiple question files. The question files include audio data representing a spoken question, at least one valid answer proposed for the question, and visual material. The visual material can be a text version of the question or a valid answer or a visual illustration of the subject matter of the question. Each question file is linked with at least one other question file. A program manages the question files by playing a question, detecting a spoken valid answer to the spoken question, and loading another question file linked to the detected answer. The modular set of interrelated questions provides the rescuer with highly interactive instructions.

Abstract: A device structure includes a III-nitride wurtzite semiconductor light emitting region disposed between a p-type region and an n-type region. A bonded interface is disposed between two surfaces, one of the surfaces being a surface of the device structure. The bonded interface facilitates an orientation of the wurtzite c-axis in the light emitting region that confines carriers in the light emitting region, potentially increasing efficiency at high current density.