Abstract: An x-ray lithography system is disclosed in which x-rays are generated by directing a high energy laser beam against a metal target to form an x-ray emitting plasma. The x-rays from the plasma are then directed through a mask towards a resist covered wafer to cause a patterned exposure on the wafer resist coating. The mask, the portion of the target which the laser beam strikes and the portion of the wafer to be exposed are all within an evacuated chamber. The laser, prior to entering the chamber, is split into two separate beams, each of which are focused and directed through a window in the side of the chamber towards the same spot on the target. Apparatus, including an air bearing, seal and positioner, is provided to move the target at periodic intervals. Similar apparatus is provided to move the wafer from exposure section to exposure section.

Abstract: A device used to test the features of a mask used in a semiconductor lithographic machine. The device includes an array of charge couple devices and an array of pinholes positioned above the charge couple devices. The array of pinholes includes a small pinhole opening for each of the charge couple devices in that array and the size of each opening is dependent upon the resolution of the mask features desired to be inspected. The array of pinholes and the array of charge couple devices are moved in unison in discrete steps, related to the size of the pinhole openings, across an area of the mask related to the center to center spacing of the charge couple devices of the charge couple device array. By reading the data of each of the charge couple devices after each step, a comparison can be made against data previously obtained from a known good mask and a determination can be made whether the mask under test is acceptable or flawed.