Abstract: Methods for locating and characterizing defects can include performing a first scan of a substrate to produce a first defect map including a first set of coordinates of one or more defects of the substrate and performing a second scan of one or more regions of the substrate associated with the defects based on the first defect map to produce one or more electron channeling contrast (ECC) images of the defects. Characterization of the defects can be based on the ECC images alone or in combination with other techniques. Such methods can include determining a second set of coordinates associated with the one or more defects based on the ECC images and directing an ion beam toward the substrate and milling the substrate based on the second set of coordinates.

Abstract: Methods for locating and characterizing defects can include performing a first scan of a substrate to produce a first defect map including a first set of coordinates of one or more defects of the substrate and performing a second scan of one or more regions of the substrate associated with the defects based on the first defect map to produce one or more electron channeling contrast (ECC) images of the defects. Characterization of the defects can be based on the ECC images alone or in combination with other techniques. Such methods can include determining a second set of coordinates associated with the one or more defects based on the ECC images and directing an ion beam toward the substrate and milling the substrate based on the second set of coordinates.

Abstract: One embodiment relates to a method for detecting defects in circuitry formed on a semiconductor substrate. A first scan of said circuitry is performed by scanning a primary electron beam in a first scan direction relative to said circuitry, and secondary electrons emitted during the first scan are detected so as to form a first voltage-contrast image. A second scan of said circuitry is performed by scanning the primary electron beam in a second scan direction relative to said circuitry, and secondary electrons emitted during the second scan are detected so as to form a second voltage-contrast image. The second scan direction is non-parallel to the first scan direction. The first and second voltage-contrast images are then compared to detect electrically-active defects. Other embodiments, aspects and features are also disclosed.