Patents by Inventor John G. Massey
John G. Massey has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11054459Abstract: A per-chip equivalent oxide thickness (EOT) circuit sensor resides in an integrated circuit. The per-chip EOT circuit sensor determines electrical characteristics of the integrated circuit. The measured electrical characteristics include leakage current. The determined electrical characteristics are used to determine physical attributes of the integrated circuit. The physical attributes, including EOT, are used in a reliability model to predict per-chip failure rate.Type: GrantFiled: November 7, 2019Date of Patent: July 6, 2021Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Carole D. Graas, Nazmul Habib, Deborah M. Massey, John G. Massey, Pascal A. Nsame, Ernest Y. Wu, Emmanuel Yashchin
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Patent number: 10996259Abstract: A per-chip equivalent oxide thickness (EOT) circuit sensor resides in an integrated circuit. The per-chip EOT circuit sensor determines electrical characteristics of the integrated circuit. The measured electrical characteristics include leakage current. The determined electrical characteristics are used to determine physical attributes of the integrated circuit. The physical attributes, including EOT, are used in a reliability model to predict per-chip failure rate.Type: GrantFiled: January 3, 2020Date of Patent: May 4, 2021Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Carole D. Graas, Nazmul Habib, Deborah M. Massey, John G. Massey, Pascal A. Nsame, Ernest Y. Wu, Emmanuel Yashchin
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Patent number: 10989754Abstract: A per-chip equivalent oxide thickness (EOT) circuit sensor resides in an integrated circuit. The per-chip EOT circuit sensor determines electrical characteristics of the integrated circuit. The measured electrical characteristics include leakage current. The determined electrical characteristics are used to determine physical attributes of the integrated circuit. The physical attributes, including EOT, are used in a reliability model to predict per-chip failure rate.Type: GrantFiled: November 16, 2017Date of Patent: April 27, 2021Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Carole D. Graas, Nazmul Habib, Deborah M. Massey, John G. Massey, Pascal A. Nsame, Ernest Y. Wu, Emmanuel Yashchin
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Publication number: 20200141996Abstract: A per-chip equivalent oxide thickness (EOT) circuit sensor resides in an integrated circuit. The per-chip EOT circuit sensor determines electrical characteristics of the integrated circuit. The measured electrical characteristics include leakage current. The determined electrical characteristics are used to determine physical attributes of the integrated circuit. The physical attributes, including EOT, are used in a reliability model to predict per-chip failure rate.Type: ApplicationFiled: January 3, 2020Publication date: May 7, 2020Inventors: Carole D. Graas, Nazmul Habib, Deborah M. Massey, John G. Massey, Pascal A. Nsame, Ernest Y. Wu, Emmanuel Yashchin
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Patent number: 10634797Abstract: A radiation exposure system having a beam source is provided. The system further includes a variable thickness degrader, positioned between the beam source and an object to be exposed, for providing varying degrees of degradation to a radiation beam emitted from the beam source onto the object. The system also includes a set of detectors, positioned between the variable thickness degrader and the object, for receiving and measuring only a portion of the radiation beam remaining after the degradation of the radiation beam by the variable thickness degrader.Type: GrantFiled: July 7, 2017Date of Patent: April 28, 2020Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Michael S. Gordon, John G. Massey, Kenneth P. Rodbell
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Patent number: 10627529Abstract: A radiation exposure system having a beam source is provided. The system further includes a variable thickness degrader, positioned between the beam source and an object to be exposed, for providing varying degrees of degradation to a radiation beam emitted from the beam source onto the object. The system also includes a set of detectors, positioned between the variable thickness degrader and the object, for receiving and measuring only a portion of the radiation beam remaining after the degradation of the radiation beam by the variable thickness degrader.Type: GrantFiled: December 15, 2017Date of Patent: April 21, 2020Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Michael S. Gordon, John G. Massey, Kenneth P. Rodbell
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Publication number: 20200072897Abstract: A per-chip equivalent oxide thickness (EOT) circuit sensor resides in an integrated circuit. The per-chip EOT circuit sensor determines electrical characteristics of the integrated circuit. The measured electrical characteristics include leakage current. The determined electrical characteristics are used to determine physical attributes of the integrated circuit. The physical attributes, including EOT, are used in a reliability model to predict per-chip failure rate.Type: ApplicationFiled: November 7, 2019Publication date: March 5, 2020Inventors: Carole D. Graas, Nazmul Habib, Deborah M. Massey, John G. Massey, Pascal A. Nsame, Ernest Y. Wu, Emmanuel Yashchin
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Patent number: 10564214Abstract: A per-chip equivalent oxide thickness (EOT) circuit sensor resides in an integrated circuit. The per-chip EOT circuit sensor determines electrical characteristics of the integrated circuit. The measured electrical characteristics include leakage current. The determined electrical characteristics are used to determine physical attributes of the integrated circuit. The physical attributes, including EOT, are used in a reliability model to predict per-chip failure rate.Type: GrantFiled: June 22, 2017Date of Patent: February 18, 2020Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Carole D. Graas, Nazmul Habib, Deborah M. Massey, John G. Massey, Pascal A. Nsame, Ernest Y. Wu, Emmanuel Yashchin
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Publication number: 20190011573Abstract: A radiation exposure system having a beam source is provided. The system further includes a variable thickness degrader, positioned between the beam source and an object to be exposed, for providing varying degrees of degradation to a radiation beam emitted from the beam source onto the object. The system also includes a set of detectors, positioned between the variable thickness degrader and the object, for receiving and measuring only a portion of the radiation beam remaining after the degradation of the radiation beam by the variable thickness degrader.Type: ApplicationFiled: December 15, 2017Publication date: January 10, 2019Inventors: Michael S. Gordon, John G. Massey, Kenneth P. Rodbell
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Publication number: 20190011572Abstract: A radiation exposure system having a beam source is provided. The system further includes a variable thickness degrader, positioned between the beam source and an object to be exposed, for providing varying degrees of degradation to a radiation beam emitted from the beam source onto the object. The system also includes a set of detectors, positioned between the variable thickness degrader and the object, for receiving and measuring only a portion of the radiation beam remaining after the degradation of the radiation beam by the variable thickness degrader.Type: ApplicationFiled: July 7, 2017Publication date: January 10, 2019Inventors: Michael S. Gordon, John G. Massey, Kenneth P. Rodbell
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Publication number: 20180074114Abstract: A per-chip equivalent oxide thickness (EOT) circuit sensor resides in an integrated circuit. The per-chip EOT circuit sensor determines electrical characteristics of the integrated circuit. The measured electrical characteristics include leakage current. The determined electrical characteristics are used to determine physical attributes of the integrated circuit. The physical attributes, including EOT, are used in a reliability model to predict per-chip failure rate.Type: ApplicationFiled: November 16, 2017Publication date: March 15, 2018Inventors: Carole D. Graas, Nazmul Habib, Deborah M. Massey, John G. Massey, Pascal A. Nsame, Ernest Y. Wu, Emmanuel Yashchin
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Publication number: 20170285094Abstract: A per-chip equivalent oxide thickness (EOT) circuit sensor resides in an integrated circuit. The per-chip EOT circuit sensor determines electrical characteristics of the integrated circuit. The measured electrical characteristics include leakage current. The determined electrical characteristics are used to determine physical attributes of the integrated circuit. The physical attributes, including EOT, are used in a reliability model to predict per-chip failure rate.Type: ApplicationFiled: June 22, 2017Publication date: October 5, 2017Inventors: Carole D. Graas, Nazmul Habib, Deborah M. Massey, John G. Massey, Pascal A. Nsame, Ernest Y. Wu, Emmanuel Yashchin
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Patent number: 9739824Abstract: A per-chip equivalent oxide thickness (EOT) circuit sensor resides in an integrated circuit. The per-chip EOT circuit sensor determines electrical characteristics of the integrated circuit. The measured electrical characteristics include leakage current. The determined electrical characteristics are used to determine physical attributes of the integrated circuit. The physical attributes, including EOT, are used in a reliability model to predict per-chip failure rate.Type: GrantFiled: May 16, 2016Date of Patent: August 22, 2017Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Carole D. Graas, Nazmul Habib, Deborah M. Massey, John G. Massey, Pascal A. Nsame, Ernest Y. Wu, Emmanuel Yashchin
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Publication number: 20160258994Abstract: A per-chip equivalent oxide thickness (EOT) circuit sensor resides in an integrated circuit. The per-chip EOT circuit sensor determines electrical characteristics of the integrated circuit. The measured electrical characteristics include leakage current. The determined electrical characteristics are used to determine physical attributes of the integrated circuit. The physical attributes, including EOT, are used in a reliability model to predict per-chip failure rate.Type: ApplicationFiled: May 16, 2016Publication date: September 8, 2016Inventors: Carole D. Graas, Nazmul Habib, Deborah M. Massey, John G. Massey, Pascal A. Nsame, Ernest Y. Wu, Emmanuel Yashchin
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Patent number: 9395403Abstract: A per-chip equivalent oxide thickness (EOT) circuit sensor resides in an integrated circuit. The per-chip EOT circuit sensor determines electrical characteristics of the integrated circuit. The measured electrical characteristics include leakage current. The determined electrical characteristics are used to determine physical attributes of the integrated circuit. The physical attributes, including EOT, are used in a reliability model to predict per-chip failure rate.Type: GrantFiled: October 28, 2013Date of Patent: July 19, 2016Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Carole D. Graas, Nazmul Habib, Deborah M. Massey, John G. Massey, Pascal A. Nsame, Ernest Y. Wu, Emmanuel Yashchin
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Patent number: 9201727Abstract: A system for providing error detection or correction on a data bus includes one or more caches coupled to a central processing unit and to a hub by one or more buses. The system also includes a plurality of arrays, each array disposed on one of the buses. Each of the arrays includes a plurality of storage cells disposed in an insensitive direction and an error control mechanism configured to detect an error in the plurality of storage cells.Type: GrantFiled: January 15, 2013Date of Patent: December 1, 2015Assignee: International Business Machines CorporationInventors: William V. Huott, Kevin W. Kark, John G. Massey, K. Paul Muller, David L. Rude, David S. Wolpert
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Patent number: 9041428Abstract: A method for configuring the placement of a plurality of storage cells on an integrated circuit includes grouping the plurality of storage cells into a plurality of words, where each of the plurality of words is protected by an error control mechanism. The method also includes placing each of the storage cells on the integrated circuit such that a distance between any two of the storage cells belonging to one of the plurality of words is greater than a minimum distance. The minimum distance is configured such that a probability of any of the plurality of words experiencing multiple radiation induced errors is below a threshold value.Type: GrantFiled: January 15, 2013Date of Patent: May 26, 2015Assignee: International Business Machines CorporationInventors: William V. Huott, Kevin W. Kark, John G. Massey, K. Paul Muller, David L. Rude, David S. Wolpert
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Patent number: 9043683Abstract: A method for providing error detection and/or correction to an array of storage cells includes determining a sensitive direction and an insensitive direction of the storage cells and adding a first error control mechanism to the array of storage cells in the insensitive direction. The method also includes adding a second error control mechanism to the array of storage cells in the sensitive direction. The second error control mechanism has a higher Hamming distance than the first error control mechanism.Type: GrantFiled: January 23, 2013Date of Patent: May 26, 2015Assignee: International Business Machines CorporationInventors: William V. Huott, Kevin W. Kark, John G. Massey, K. Paul Muller, David L. Rude, David S. Wolpert
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Publication number: 20150115994Abstract: A per-chip equivalent oxide thickness (EOT) circuit sensor resides in an integrated circuit. The per-chip EOT circuit sensor determines electrical characteristics of the integrated circuit. The measured electrical characteristics include leakage current. The determined electrical characteristics are used to determine physical attributes of the integrated circuit. The physical attributes, including EOT, are used in a reliability model to predict per-chip failure rate.Type: ApplicationFiled: October 28, 2013Publication date: April 30, 2015Applicant: International Business Machines CorporationInventors: Carole D. Graas, Nazmul Habib, Deborah M. Massey, John G. Massey, Pascal A. Nsame, Ernest Y. Wu, Emmanuel Yashchin
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Patent number: 9021328Abstract: A method for adding error detection, or error detection combined with error correction, to a plurality of register banks includes grouping the plurality of register banks into an array. The method also includes adding a first error control mechanism to the array in a first direction and adding a second error control mechanism to the array in a second direction. The method further includes adding a product code to the array, the product code including applying the second error control mechanism to a plurality of bits of the first error control mechanism.Type: GrantFiled: January 15, 2013Date of Patent: April 28, 2015Assignee: International Business Machines CorporationInventors: William V. Huott, Kevin W. Kark, John G. Massey, K. Paul Muller, David L. Rude, David S. Wolpert