Abstract: This invention discloses a method of fabricating an electroexplosive device which utilizes a semiconductor bridge as an ignition element. The semiconductor bridge is electrically connected to a metal header by a small, low resistance contact to the extension of bridge material and through an insulating silicon substrate to an eutectic bond created by gold plating on the metal header and the silicon. The second electrode of the bridge circuit is connected via wire bonds to one or two conducting pins which penetrate the metal header and are insulated by surrounding glass. A redundant connection via two conducting pins insulated from the header to one electrode of the semiconductor bridge allows a post assembly test of the integrity of the wire bonds, thereby increasing reliability of the device.

Abstract: An electrical apparatus having a first substrate, a first metallic layer, a semiconductor device, a second metallic layer, and a metallic interconnecting structure is described. The first substrate is of a semiconductor material and has an upper region and a lower region. The substrate provides an electrical path between the upper region and the lower region. The first metallic layer is coupled to the lower region of the substrate. The first metallic layer provides a first external electrical connection. The semiconductor device has an upper region and a lower region. The second metallic layer is coupled to the lower region of the semiconductor device. The second metallic layer provides a second external electrical connection. The metallic interconnecting structure electrically couples the upper region of the first substrate to the upper region of the semiconductor device. A bridge apparatus is also described. In addition, a method of fabricating an electrical apparatus is described.