Patents by Inventor John Gumpher
John Gumpher has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8709944Abstract: A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.Type: GrantFiled: May 7, 2013Date of Patent: April 29, 2014Assignee: TEL Epion Inc.Inventors: Noel Russell, John J. Hautala, John Gumpher
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Patent number: 8703607Abstract: A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.Type: GrantFiled: May 7, 2013Date of Patent: April 22, 2014Assignee: TEL Epion Inc.Inventors: Noel Russell, John J. Hautala, John Gumpher
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Publication number: 20130230984Abstract: A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.Type: ApplicationFiled: May 7, 2013Publication date: September 5, 2013Applicant: TEL EPION INC.Inventors: Noel Russell, John J. Hautala, John Gumpher
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Patent number: 8466045Abstract: A method for forming strained epitaxial carbon-doped silicon (Si) films, for example as raised source and drain regions for electronic devices. The method includes providing a structure having an epitaxial Si surface and a patterned film, non-selectively depositing a carbon-doped Si film onto the structure, the carbon-doped Si film containing an epitaxial carbon-doped Si film deposited onto the epitaxial Si surface and a non-epitaxial carbon-doped Si film deposited onto the patterned film, and non-selectively depositing a Si film on the carbon-doped Si film, the Si film containing an epitaxial Si film deposited onto the epitaxial carbon-doped Si film and a non-epitaxial Si film deposited onto the non-epitaxial carbon-doped Si film. The method further includes dry etching away the non-epitaxial Si film, the non-epitaxial carbon-doped Si film, and less than the entire epitaxial Si film to form a strained epitaxial carbon-doped Si film on the epitaxial Si surface.Type: GrantFiled: July 2, 2010Date of Patent: June 18, 2013Assignee: Tokyo Electron LimitedInventors: John Gumpher, Seungho Oh, Anthony Dip
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Patent number: 8440578Abstract: A method for amorphizing a layer on a substrate is described. In one embodiment, the method includes treating the substrate with a first gas cluster ion beam (GCIB) using a first beam energy selected to yield an amorphous sub-layer within the substrate of a desired thickness, which produces a first interfacial roughness of an amorphous-crystal interface between the amorphous sub-layer and a crystalline sub-layer of the substrate. The method further includes treating the substrate with a second GCIB using a second beam energy, less than the first beam energy, to reduce the first interfacial roughness of the amorphous-crystal interface to a second interfacial roughness.Type: GrantFiled: March 28, 2011Date of Patent: May 14, 2013Assignee: TEL Epion Inc.Inventor: John Gumpher
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Patent number: 8435890Abstract: A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.Type: GrantFiled: May 29, 2012Date of Patent: May 7, 2013Assignee: TEL Epion Inc.Inventors: Noel Russell, John J. Hautala, John Gumpher
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Publication number: 20120252222Abstract: A method for amorphizing a layer on a substrate is described. In one embodiment, the method includes treating the substrate with a first gas cluster ion beam (GCIB) using a first beam energy selected to yield an amorphous sub-layer within the substrate of a desired thickness, which produces a first interfacial roughness of an amorphous-crystal interface between the amorphous sub-layer and a crystalline sub-layer of the substrate. The method further includes treating the substrate with a second GCIB using a second beam energy, less than the first beam energy, to reduce the first interfacial roughness of the amorphous-crystal interface to a second interfacial roughness.Type: ApplicationFiled: March 28, 2011Publication date: October 4, 2012Applicant: TEL EPION INC.Inventor: John Gumpher
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Publication number: 20120238092Abstract: A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.Type: ApplicationFiled: May 29, 2012Publication date: September 20, 2012Applicant: TEL EPION INC.Inventors: Noel Russell, John J. Hautala, John Gumpher
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Patent number: 8263474Abstract: A method is provided for reduced defect such as void free or reduced void Si or SiGe deposition in a micro-feature on a patterned substrate. The micro-feature includes a sidewall and the patterned substrate contains an isolation layer on the field area and on the sidewall and bottom of the micro-feature. The method includes forming a Si or SiGe seed layer at the bottom of the micro-feature, and at least partially filling the micro-feature from the bottom up by selectively growing Si or SiGe onto the Si or SiGe seed layer. According to one embodiment, the Si or SiGe seed layer is formed by depositing a conformal Si or SiGe layer onto the patterned substrate, removing the Si or SiGe layer from the field area, heat treating the Si or SiGe layer in the presence of H2 gas to transfer at least a portion of the Si or SiGe layer from the sidewall to the bottom of the micro-feature, and etching Si or SiGe residue from the field area and the sidewall.Type: GrantFiled: January 11, 2007Date of Patent: September 11, 2012Assignee: Tokyo Electron LimitedInventors: Anthony Dip, John Gumpher, Allen John Leith, Seungho Oh
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Patent number: 8187971Abstract: A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.Type: GrantFiled: September 1, 2010Date of Patent: May 29, 2012Assignee: TEL Epion Inc.Inventors: Noel Russell, John J. Hautala, John Gumpher
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Publication number: 20110117738Abstract: A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.Type: ApplicationFiled: September 1, 2010Publication date: May 19, 2011Applicant: TEL EPION INC.Inventors: Noel Russell, John J. Hautala, John Gumpher
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Patent number: 7604841Abstract: A method for extending time between chamber cleaning processes in a process chamber of a processing system. A particle-reducing film is formed on a chamber component in the process chamber to reduce particle formation in the process chamber during substrate processing, at least one substrate is introduced into the process chamber, a manufacturing process is performed in the process chamber, and the at least one substrate is removed from the process chamber. The particle-reducing film may be deposited on a clean chamber component or on a material deposit formed on a chamber component. Alternatively, the particle-reducing film may be formed by chemically modifying at least a portion of a material deposit on a chamber component. The particle-reducing film may be formed after each manufacturing process or at selected intervals after multiple manufacturing processes.Type: GrantFiled: March 31, 2004Date of Patent: October 20, 2009Assignee: Tokyo Electron LimitedInventors: Raymond Joe, John Gumpher, Anthony Dip
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Patent number: 7498270Abstract: A method for forming a densified silicon oxynitride film with tensile stress and a semiconductor device including the densified silicon oxynitride film. The densified silicon oxynitride film can be formed by depositing a porous SiNC:H film on a substrate in a LPCVD process, and exposing the porous SiNC:H film to an oxygen-containing gas to incorporate oxygen into the SiNC:H film, thereby forming a densified SiONC:H film having a greater density than the porous SiNC:H film. The densified silicon oxynitride film can be included on a substrate including the semiconductor device.Type: GrantFiled: September 30, 2005Date of Patent: March 3, 2009Assignee: Tokyo Electron LimitedInventor: John Gumpher
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Publication number: 20080169534Abstract: A method is provided for reduced defect such as void free or reduced void Si or SiGe deposition in a micro-feature on a patterned substrate. The micro-feature includes a sidewall and the patterned substrate contains an isolation layer on the field area and on the sidewall and bottom of the micro-feature. The method includes forming a Si or SiGe seed layer at the bottom of the micro-feature, and at least partially filling the micro-feature from the bottom up by selectively growing Si or SiGe onto the Si or SiGe seed layer. According to one embodiment, the Si or SiGe seed layer is formed by depositing a conformal Si or SiGe layer onto the patterned substrate, removing the Si or SiGe layer from the field area, heat treating the Si or SiGe layer in the presence of H2 gas to transfer at least a portion of the Si or SiGe layer from the sidewall to the bottom of the micro-feature, and etching Si or SiGe residue from the field area and the sidewall.Type: ApplicationFiled: January 11, 2007Publication date: July 17, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Anthony Dip, John Gumpher, Allen John Leith, Seungho Oh
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Publication number: 20070077777Abstract: A method for forming a densified silicon oxynitride film with tensile stress and a semiconductor device including the densified silicon oxynitride film. The densified silicon oxynitride film can be formed by depositing a porous SiNC:H film on a substrate in a LPCVD process, and exposing the porous SiNC:H film to an oxygen-containing gas to incorporate oxygen into the SiNC:H film, thereby forming a densified SiONC:H film having a greater density than the porous SiNC:H film. The densified silicon oxynitride film can be included on a substrate including the semiconductor device.Type: ApplicationFiled: September 30, 2005Publication date: April 5, 2007Applicant: TOKYO ELECTRON LIMITEDInventor: John Gumpher
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Publication number: 20050221001Abstract: A method for extending time between chamber cleaning processes in a process chamber of a processing system. A particle-reducing film is formed on a chamber component in the process chamber to reduce particle formation in the process chamber during substrate processing, at least one substrate is introduced into the process chamber, a manufacturing process is performed in the process chamber, and the at least one substrate is removed from the process chamber. The particle-reducing film may be deposited on a clean chamber component or on a material deposit formed on a chamber component. Alternatively, the particle-reducing film may be formed by chemically modifying at least a portion of a material deposit on a chamber component. The particle-reducing film may be formed after each manufacturing process or at selected intervals after multiple manufacturing processes.Type: ApplicationFiled: March 31, 2004Publication date: October 6, 2005Applicant: Tokyo Electron Limited of TBS Broadcast CenterInventors: Raymond Joe, John Gumpher, Anthony Dip