Abstract: A system and method for controlling the drive strength of output drivers in integrated circuit devices employing, in a representative embodiment, a single reference voltage and a single comparator without the requirement of a dead-band. The technique of the present invention guarantees that the output voltage will always be within one least significant bit of drive strength of the target level that is set by the single reference voltage.

Abstract: The timing resolution of a DLL based delay line can be achieved by making the number of delay stages in the master voltage-controlled delay line variable. By adjusting both the tap selected on a slave voltage-controlled delay line as well as the number of stages of delay in the master voltage-controlled delay line, the timing resolution can be improved by at least a factor of two when compared to previous delay line circuits using a fixed length master voltage-controlled delay line.

Abstract: A differential amplifier design and bias control technique of particular applicability for low voltage operation in which the threshold voltage of n-channel differential input transistors is controlled using substrate bias in order to allow a wider range of input signal levels. Further disclosed is a technique for controlling the substrate bias of the input transistors of a differential amplifier based on the level of the output of the amplifier in addition to a differential amplifier circuit capable of low voltage operation in which an additional bias current is introduced that enables the output pull-up current to be increased without increasing the pull-down current.

Abstract: An equalization circuit for a pair of resistive-capacitive data lines includes primary and secondary equalization circuits attached at both ends of the data line pair. A primary equalization circuit at one end of the data line pair receives a primary control signal, and a secondary equalization circuit at the other end of the data line pair receives a secondary control signal, which is different than the primary control signal. The equalization devices in the primary equalization circuit are attached near the read and write amplifiers and operate normally since all the information is available as to whether or not the corresponding data line pair should be equalized. The additional equalization devices in the secondary equalization circuit placed at the other end of the data line pair receive a simpler control signal that lacks the information as to whether or not any particular data line pair is being equalized.

Abstract: A differential amplifier design and bias control technique of particular applicability for low voltage operation in which the threshold voltage of n-channel differential input transistors is controlled using substrate bias in order to allow a wider range of input signal levels. Further disclosed is a technique for controlling the substrate bias of the input transistors of a differential amplifier based on the level of the output of the amplifier in addition to a differential amplifier circuit capable of low voltage operation in which an additional bias current is introduced that enables the output pull-up current to be increased without increasing the pull-down current.

Abstract: A differential amplifier design and bias control technique of particular applicability for low voltage operation in which the threshold voltage of n-channel differential input transistors is controlled using substrate bias in order to allow a wider range of input signal levels. Further disclosed is a technique for controlling the substrate bias of the input transistors of a differential amplifier based on the level of the output of the amplifier in addition to a differential amplifier circuit capable of low voltage operation in which an additional bias current is introduced that enables the output pull-up current to be increased without increasing the pull-down current.

Abstract: A differential amplifier design and bias control technique of particular applicability for low voltage operation in which the threshold voltage of n-channel differential input transistors is controlled using substrate bias in order to allow a wider range of input signal levels. Further disclosed is a technique for controlling the substrate bias of the input transistors of a differential amplifier based on the level of the output of the amplifier in addition to a differential amplifier circuit capable of low voltage operation in which an additional bias current is introduced that enables the output pull-up current to be increased without increasing the pull-down current, as well as circuitry for optimizing the performance of the differential in both DDR-I and DDR-II operational modes.

Abstract: An analog delay locked loop for receiving a reference clock signal and for generating a delayed output clock signal includes a voltage controlled delay line, a fixed delay line, a delay voltage control, a fast/slow latch, a phase detector, as well as reset and clock off circuits. The fast/slow latch generates three signals that are received by the delay voltage control: a “latched slow signal”, a “latched fast signal”, as well as a “latched fast to slow signal”. The phase detector generates “go fast” and “go slow” signals that are received by the fast/slow latch. The analog delay locked loop sets the initial delay of the delay line at or near its minimum value on start-up. The delay is then forced to increase from the minimum value until a locking condition is achieved independent of the phase relationship between the reference and delayed clock signals.

Abstract: A multi-bank memory array architecture utilizing topologically non-uniform blocks of sub-arrays and input/output (“I/O”) assignments in an integrated circuit memory device. By using non-uniform blocks of multiple identical sub-arrays, non-uniform assignments of blocks to banks and/or non-uniform assignments of I/Os to blocks, it is possible to optimize the dimensions of the chip and the placement of the I/Os with respect to the package pads. In this manner, the granularity of the building blocks of sub-arrays is improved while the flexibility in I/O assignment is also improved leading to more efficient and flexible chip layouts.

Abstract: A multi-bank memory array architecture utilizing topologically non-uniform blocks of sub-arrays and input/output (“I/O”) assignments in an integrated circuit memory device. By using non-uniform blocks of multiple identical sub-arrays, non-uniform assignments of blocks to banks and/or non-uniform assignments of I/Os to blocks, it is possible to optimize the dimensions of the chip and the placement of the I/Os with respect to the package pads. In this manner, the granularity of the building blocks of sub-arrays is improved while the flexibility in I/O assignment is also improved leading to more efficient and flexible chip layouts.

Abstract: A system and method for eliminating pulse width variations in digital delay lines partitions a delay line into two substantially identical blocks of delay inverters, inserting a first inverter between the two blocks and a second substantially identical inverter at the output of the second block. The requirement for matching device characteristics at the individual delay inverter level is eliminated and the only requirement is that the parasitic loading of the inverter between the blocks and the inverter on the output of the second block be the same. Consequently, the layout of the delay inverters in a single block may be made in the most efficient manner possible and the same identical layout can be used for the first and second blocks.

Abstract: A system and method for supporting sequential burst counts of particular utility with respect to double data rate (“DDR”) synchronous dynamic random access memory (“SDRAM”) devices wherein each memory bank is divided into halves, corresponding to Even (AOc=0) and Odd (AOc=1) portions. Separate address busses may be provided for those bits necessary to accommodate the maximum burst length. As the column addresses are loaded, the buffers associated with the Even bus check to determine if the pad address “Y” or “Y+1” should be loaded. Loading “Y+1” is necessary to support sequential counting if the start address is Odd (AOc=1). “Y” selects in the Odd and Even banks are then selected and incremented, concurrently. Nevertheless, the Even field is always “Y+1”, that is, YEven=YOdd+1.

Abstract: A system and method for eliminating pulse width variations in digital delay lines comprises partitioning the delay line into two substantially identical blocks of delay inverters and inserting a first inverter between the two blocks and a second substantially identical inverter at the output of the second block. In this manner the requirement for matching device characteristics at the individual delay inverter level is eliminated and the only requirement is that the parasitic loading of the inverter between the blocks and the inverter on the output of the second block be the same. Consequently, the layout of the delay inverters in a single block may be effectuated in the most efficient manner possible and the same identical layout can be used for the first and second blocks.

Abstract: A system and method of compensating for non-linear voltage-to-delay characteristics in a voltage controlled delay line such as those used in delay-locked loop (“DLL”) circuits in integrated circuit (“IC”) devices such as double data rate (“DDR”) dynamic random access memory (“DRAM”), static random access memory (“SRAM”), processors and other IC devices. The technique renders the incremental changes for each correction to the control voltages to the voltage controlled delay line a function of the control voltage itself. The change in the control voltage becomes smaller as the control voltage gets lower thereby effectively precluding over-correction and excessive jitter.

Abstract: A method, and associated apparatus, for eliminating pulse width variations in digital delay lines. The method includes partitioning the delay line into two substantially identical blocks of delay inverters and inserting a first inverter between the two blocks and a second substantially identical inverter at the output of the second block. The requirement for matching device characteristics at the individual delay inverter level is eliminated, and the parasitic loading of the inverter between the blocks and the inverter on the output of the second block is the same. Since the rising edge input to the first block becomes a falling edge input to the second block as it propagates through the delay line, the rising and falling input edges will encounter an identical set of transitions as they propagate through the two blocks.