Abstract: A triode plasma reactor having first, second and third electrodes for forming a plasma in a reaction chamber from a reactant gas includes a phase modulated potential generator for generating time varying potentials on the second and third electrodes which are phase modulated versions of one another. The phase modulated versions may also include a fixed phase shift between them. By time varying the phase angle relative to a set phase shift, a new dimension of time varying control for the reactor may be obtained. Phase modulation at frequencies from audio frequencies to radio frequencies may be provided. Phase modulation may be accomplished digitally or in the analogue domain.

Abstract: A metallization scheme for interconnection of elements in thin film and hybrid circuits is described. A thin layer of titanium is first formed, preferably by evaporation or sputtering, on the surface of the insulating substrate. A thin layer of copper is then formed in the same manner over the titanium layer. This is followed by electroplating of copper to a desired thickness onto selected portions of the Ti-Cu multilayer. Successive layers of nickel and gold are then selectively electroplated onto the plated copper regions. An additional layer of palladium may also be included between the titanium and copper layers for improved adhesion. The Ti-Cu-Ni-Au metallization system has been found unusually compatible with the major processing requirements of thin film circuits, for example, thermocompression bonding, soldering, via-hole coverage and resistor stabilization.

Abstract: Disclosed is a crossover fabrication technique which is compatible with interconnect metallization for thin film and hybrid circuits which comprises a layer of copper. In one embodiment, evaporated layers of Ti and Cu are used as the base layers to build up the crossover spacing layer. A nickel protective layer is formed over the evaporated layers and the interconnect metallization. A copper spacing layer is then formed over the nickel layer by plating. Pillar holes are etched over selected areas of the interconnect metal preferably using an etchant which removes both the copper spacing layer and nickel protective layer, followed by forming the gold crossovers. The remaining copper spacing layer is removed by an etchant which preferentially attacks copper, and the nickel protective layer and copper base layers are preferably removed by a single etchant.

Abstract: A metallization scheme for interconnection of elements in thin film and hybrid circuits is described. A thin layer of titanium is first formed, preferably by evaporation or sputtering, on the surface of the insulating substrate. A thin layer of copper is then formed in the same manner over the titanium layer. This is followed by electroplating of copper to a desired thickness onto selected portions of the Ti-Cu multilayer. Successive layers of nickel and gold are then selectively electroplated onto the plated copper regions. An additional layer of palladium may also be included between the titanium and copper layers for improved adhesion. The Ti-Cu-Ni-Au metallization system has been found unusually compatible with the major processing requirements of thin film circuits, for example, thermocompression bonding, soldering, via-hole coverage and resistor stabilization.