Patents by Inventor John Hoang
John Hoang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240092745Abstract: The present invention provides new prodrugs of therapeutically active compounds, including oligomeric prodrugs, and compositions to treat medical disorders, for example glaucoma, a disorder or abnormality related to an increase in intraocular pressure (IOP), a disorder requiring neuroprotection, age-related macular degeneration, or diabetic retinopathy.Type: ApplicationFiled: January 9, 2023Publication date: March 21, 2024Applicant: Graybug Vision, Inc.Inventors: Ming Yang, John G. Bauman, Jeffrey L. Cleland, Nu Hoang, Emmett Cunningham
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Publication number: 20240033387Abstract: Embodiments disclosed include autonomous robotic systems and methods for disinfecting an environment. An autonomous disinfecting system comprises, in a housing, a first unit comprising a first plurality of UV-C lamps attached to a first wireless base comprising a plurality of wheels. Preferably, the first unit further comprises a docking port for a second unit comprising a second plurality of UV-C lamps attached to a second wireless base, and a motion sensor configured to send a signal to a processing unit comprised in the autonomous disinfecting system wherein the processing unit is configured to shut down the system when it receives a signal indicating a detected movement.Type: ApplicationFiled: August 7, 2023Publication date: February 1, 2024Inventors: Sherylinn Hoang, John Hoang
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Patent number: 11832533Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.Type: GrantFiled: December 20, 2021Date of Patent: November 28, 2023Assignee: Lam Research CorporationInventors: James Samuel Sims, Andrew John McKerrow, Meihua Shen, Thorsten Lill, Shane Tang, Kathryn Merced Kelchner, John Hoang, Alexander Dulkin, Danna Qian, Vikrant Rai
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Patent number: 11792987Abstract: A three-dimensional (3D) memory structure includes memory cells and a plurality of oxide layers and a plurality of word line layers. The plurality of oxide layers and the plurality of word line layers are alternately stacked in a first direction. A plurality of double channel holes extend through the plurality of oxide layers and the plurality of word line layers in the first direction. The plurality of double channel holes have a peanut-shaped cross-section in a second direction that is transverse to the first direction.Type: GrantFiled: October 22, 2019Date of Patent: October 17, 2023Assignee: LAM RESEARCH CORPORATIONInventors: Thorsten Lill, Meihua Shen, John Hoang, Hui-Jung Wu, Gereng Gunawan, Yang Pan
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Patent number: 11723998Abstract: Embodiments disclosed include autonomous robotic systems and methods for disinfecting an environment. An autonomous disinfecting system comprises, in a housing, a first unit comprising a first plurality of UV-C lamps attached to a first wireless base comprising a plurality of wheels. Preferably, the first unit further comprises a docking port for a second unit comprising a second plurality of UV-C lamps attached to a second wireless base, and a motion sensor configured to send a signal to a processing unit comprised in the autonomous disinfecting system wherein the processing unit is configured to shut down the system when it receives a signal indicating a detected movement.Type: GrantFiled: July 1, 2020Date of Patent: August 15, 2023Inventors: Sherylinn Hoang, John Hoang
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Publication number: 20230143057Abstract: Channel material is conformally deposited along sidewalls of one or more etched features of a mold stack in fabricating a three-terminal memory device. The channel material is deposited in recessed regions and non-recessed regions of the one or more etched features. A sacrificial liner is deposited on the channel material. A directional etch removes the sacrificial liner from non-recessed regions of the one or more etched features. An isotropic etch removes the channel material from non-recessed regions of the one or more etched features, leaving the channel material and the sacrificial liner intact in the recessed regions. The sacrificial liner is removed, leaving the channel material intact and isolated with minimal loss of channel material from over-etch.Type: ApplicationFiled: March 1, 2021Publication date: May 11, 2023Inventors: John HOANG, Meihua SHEN, Thorsten Bernd LILL, Hui-Jung WU, Aaron Lynn ROUTZAHN, Francis Sloan ROBERTS
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Patent number: 11511008Abstract: Embodiments disclosed include autonomous robotic systems and methods for disinfecting an environment. An autonomous disinfecting system comprises, in a housing, a first unit comprising a first plurality of UV-C lamps attached to a first wireless base comprising a plurality of wheels. Preferably, the first unit further comprises a docking port for a second unit comprising a second plurality of UV-C lamps attached to a second wireless base, and a motion sensor configured to send a signal to a processing unit comprised in the autonomous disinfecting system wherein the processing unit is configured to shut down the system when it receives a signal indicating a detected movement.Type: GrantFiled: March 15, 2021Date of Patent: November 29, 2022Assignee: H7 Technologies, Inc.Inventors: Sherylinn Hoang, John Hoang
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Publication number: 20220115592Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.Type: ApplicationFiled: December 20, 2021Publication date: April 14, 2022Inventors: James Samuel Sims, Andrew John McKerrow, Meihua Shen, Thorsten Lill, Shane Tang, Kathryn Merced Kelchner, John Hoang, Alexander Dulkin, Danna Qian, Vikrant Rai
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Publication number: 20220051938Abstract: Methods for forming patterned multi-layer stacks including a metal-containing layer are provided herein. Methods involve using silicon-containing non-metal materials in a multi-layer stack including one sacrificial layer to be later removed and replaced with metal while maintaining etch contrast to pattern the multi-layer stack and selectively remove the sacrificial layer prior to depositing metal. Methods involve using silicon oxycarbide in lieu of silicon nitride, and a sacrificial non-metal material in lieu of a metal-containing layer, to fabricate the multi-layer stack, pattern the multi-layer stack, selectively remove the sacrificial non-metal material to leave spaces in the stack, and deposit metal-containing material into the spaces. Sacrificial non-metal materials include silicon nitride and doped polysilicon, such as boron-doped silicon.Type: ApplicationFiled: September 10, 2019Publication date: February 17, 2022Inventors: Hui-Jung Wu, Bart J. van Schravendijk, Mark Naoshi Kawaguchi, Gereng Gunawan, Jay E. Uglow, Nagraj Shankar, Gowri Channa Kamarthy, Kevin M. McLaughlin, Ananda K. Banerji, Jialing Yang, John Hoang, Aaron Lynn Routzahn, Nathan Musselwhite, Meihua Shen, Thorsten Bernd Lill, Hao Chi, Nicholas Dominic Altieri
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Patent number: 11239420Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.Type: GrantFiled: August 24, 2018Date of Patent: February 1, 2022Assignee: Lam Research CorporationInventors: James Samuel Sims, Andrew John McKerrow, Meihua Shen, Thorsten Lill, Shane Tang, Kathryn Merced Kelchner, John Hoang, Alexander Dulkin, Danna Qian, Vikrant Rai
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Publication number: 20220001061Abstract: Embodiments disclosed include autonomous robotic systems and methods for disinfecting an environment. An autonomous disinfecting system comprises, in a housing, a first unit comprising a first plurality of UV-C lamps attached to a first wireless base comprising a plurality of wheels. Preferably, the first unit further comprises a docking port for a second unit comprising a second plurality of UV-C lamps attached to a second wireless base, and a motion sensor configured to send a signal to a processing unit comprised in the autonomous disinfecting system wherein the processing unit is configured to shut down the system when it receives a signal indicating a detected movement.Type: ApplicationFiled: March 15, 2021Publication date: January 6, 2022Inventors: Sherylinn Hoang, John Hoang
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Publication number: 20210391355Abstract: A three-dimensional (3D) memory structure includes memory cells and a plurality of oxide layers and a plurality of word line layers. The plurality of oxide layers and the plurality of word line layers are alternately stacked in a first direction. A plurality of double channel holes extend through the plurality of oxide layers and the plurality of word line layers in the first direction. The plurality of double channel holes have a peanut-shaped cross-section in a second direction that is transverse to the first direction.Type: ApplicationFiled: October 22, 2019Publication date: December 16, 2021Inventors: Thorsten LILL, Meihua SHEN, John HOANG, Hui-Jung WU, Gereng GUNAWAN, Yang PAN
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Patent number: 10784086Abstract: Methods of etching cobalt on substrates are provided. Some methods involve exposing the substrate to a boron-containing halide gas and an additive, and exposing the substrate to an activation gas and a plasma. Additives improve selectively depositing a thicker layer of a boron-containing halide material on a surface of a mask than on a surface of a metal. Additives include H2, CH4, CF4, NF3, and Cl2. Boron-containing halide gases include BCl3, BBr3, BF3, and BI3. Exposures may be performed in two or more cycles, with variations in durations and/or bias power for each exposure in the two or more cycles.Type: GrantFiled: November 28, 2017Date of Patent: September 22, 2020Assignee: LAM RESEARCH CORPORATIONInventors: Jialing Yang, Baosuo Zhou, Meihua Shen, Thorsten Lill, John Hoang
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Publication number: 20200066987Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.Type: ApplicationFiled: August 24, 2018Publication date: February 27, 2020Inventors: James Samuel Sims, Andrew John McKerrow, Meihua Shen, Thorsten Lill, Shane Tang, Kathryn Merced Kelchner, John Hoang, Alexander Dulkin, Danna Qian, Vikrant Rai
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Patent number: 10199235Abstract: Methods and techniques for fabricating metal interconnects, lines, or vias by subtractive etching and liner deposition methods are provided. Methods involve depositing a blanket copper layer, removing regions of the blanket copper layer to form a pattern, treating the patterned metal, depositing a copper-dielectric interface material such that the copper-dielectric interface material adheres only to the patterned copper, depositing a dielectric barrier layer on the substrate, and depositing a dielectric bulk layer on the substrate.Type: GrantFiled: January 18, 2018Date of Patent: February 5, 2019Assignee: Lam Research CorporationInventors: Hui-Jung Wu, Thomas Joseph Knisley, Nagraj Shankar, Meihua Shen, John Hoang, Prithu Sharma
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Publication number: 20180211846Abstract: Methods and techniques for fabricating metal interconnects, lines, or vias by subtractive etching and liner deposition methods are provided. Methods involve depositing a blanket copper layer, removing regions of the blanket copper layer to form a pattern, treating the patterned metal, depositing a copper-dielectric interface material such that the copper-dielectric interface material adheres only to the patterned copper, depositing a dielectric barrier layer on the substrate, and depositing a dielectric bulk layer on the substrate.Type: ApplicationFiled: January 18, 2018Publication date: July 26, 2018Inventors: Hui-Jung Wu, Thomas Joseph Knisley, Nagraj Shankar, Meihua Shen, John Hoang, Prithu Sharma
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Publication number: 20180102236Abstract: Methods of etching cobalt on substrates are provided. Some methods involve exposing the substrate to a boron-containing halide gas and an additive, and exposing the substrate to an activation gas and a plasma. Additives improve selectively depositing a thicker layer of a boron-containing halide material on a surface of a mask than on a surface of a metal. Additives include H2, CH4, CF4, NF3, and Cl2. Boron-containing halide gases include BCl3, BBr3, BF3, and Bl3. Exposures may be performed in two or more cycles, with variations in durations and/or bias power for each exposure in the two or more cycles.Type: ApplicationFiled: November 28, 2017Publication date: April 12, 2018Applicant: Lam Research CorporationInventors: Jialing Yang, Baosuo Zhou, Meihua Shen, Thorsten Lill, John Hoang
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Patent number: 9899234Abstract: Methods and techniques for fabricating metal interconnects, lines, or vias by subtractive etching and liner deposition methods are provided. Methods involve depositing a blanket copper layer, removing regions of the blanket copper layer to form a pattern, treating the patterned metal, depositing a copper-dielectric interface material such that the copper-dielectric interface material adheres only to the patterned copper, depositing a dielectric barrier layer on the substrate, and depositing a dielectric bulk layer on the substrate.Type: GrantFiled: June 30, 2014Date of Patent: February 20, 2018Assignee: Lam Research CorporationInventors: Hui-Jung Wu, Thomas Joseph Knisley, Nagraj Shankar, Meihua Shen, John Hoang, Prithu Sharma
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Patent number: 9870899Abstract: Methods of etching cobalt on substrates are provided. Some methods involve exposing the substrate to a boron-containing halide gas and an additive, and exposing the substrate to an activation gas and a plasma. Additives improve selectively depositing a thicker layer of a boron-containing halide material on a surface of a mask than on a surface of a metal. Additives include H2, CH4, CF4, NF3, and Cl2. Boron-containing halide gases include BCl3, BBr3, BF3, and BI3. Exposures may be performed in two or more cycles, with variations in durations and/or bias power for each exposure in the two or more cycles.Type: GrantFiled: June 24, 2015Date of Patent: January 16, 2018Assignee: LAM RESEARCH CORPORATIONInventors: Jialing Yang, Baosuo Zhou, Meihua Shen, Thorsten Lill, John Hoang
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Patent number: 9589853Abstract: A method of planarizing an upper surface of a semiconductor substrate in a plasma etch chamber comprises supporting the substrate on a support surface of a substrate support assembly that includes an array of independently controlled thermal control elements therein which are operable to control the spatial and temporal temperature of the support surface of the substrate support assembly to form independently controllable heater zones which are formed to correspond to a desired temperature profile across the upper surface of the semiconductor substrate. The etch rate across the upper surface of the semiconductor substrate during plasma etching depends on a localized temperature thereof wherein the desired temperature profile is determined such that the upper surface of the semiconductor substrate is planarized within a predetermined time. The substrate is plasma etched for the predetermined time thereby planarizing the upper surface of the substrate.Type: GrantFiled: July 22, 2014Date of Patent: March 7, 2017Assignee: LAM RESEARCH CORPORATIONInventors: Monica Titus, Gowri Kamarthy, Harmeet Singh, Yoshie Kimura, Meihua Shen, Baosuo Zhou, Yifeng Zhou, John Hoang